SFH615A 5.3 kV TRIOS Optocoupler High Reliability FEATURES * Variety of Current Transfer Ratios at IF=10 mA - SFH615A-1, 40-80% - SFH615A-2, 63-125% - SFH615A-3, 100-200% - SFH615A-4, 160-320% * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Withstand Test Voltage, 5300 VRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 Dimensions in inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) Anode 1 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) D E DESCRIPTION The SFH615A features a large variety of transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8.0 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Maximum Ratings Emitter Reverse Voltage ...............................................................................6.0 V DC Forward Current ...................................................................... 60 mA Surge Forward Current (tP10 s) ....................................................2.5 A Total Power Dissipation .............................................................. 100 mW Detector Collector-Emitter Voltage...................................................................70 V Emitter-Collector Voltage..................................................................7.0 V Collector Current ........................................................................... 50 mA Collector Current (tP1.0 ms) ...................................................... 100 mA Total Power Dissipation .............................................................. 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74, t=1.0 s ....................................................... 5300 VRMS Creepage ....................................................................................7.0 mm Clearance....................................................................................7.0 mm Insulation Thickness between Emitter and Detector .................0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1................................................ 175 Isolation Resistance VIO=500 V, TA=25C ................................................................ 1012 VIO=500 V, TA=100C .............................................................. 1011 Storage Temperature Range..............................................-55 to +150C Ambient Temperature Range ............................................-55 to +100C Junction Temperature..................................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) .......................................... 260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-236 February 23, 2000-14 Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-emitter Leakage Current Parameter -1 -2 -3 -4 IC/ IF (IF=10 mA) 40-80 63-125 100-200 160-320 IC/ IF (IF=1.0 mA) 30(>13) 45(>22) 70(>34) 90(>56) Collector-Emitter Leakage Current, ICEO, VCE=10 V 2.0(50) 2.0(50) 5.0(100) Figure 1. Switching Times (Typical) Linear Operation (without saturation) RL=75 IF VCC=5 V IC 5.0(100) 47 Characteristics (TA=25C) Parameter Sym. Value Unit Condition Figure 2. Switching Operation (with saturation) Emitter (IR GaAs) Forward Voltage VF 1.25(1.65) V IF=60 mA Reverse Current IR 0.01(10) A VR=6.0 V Capacitance C0 13 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- CCE 5.2 pF VCE=5.0 V, f=1.0 MHz RthJA 500 K/W -- Collector-Emitter Saturation Voltage VCEsat 0.25(0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.4 pF -- IF VCC=5 V 47 Detector (Si Phototransistor) Capacitance Thermal Resistance 1 k Figure 3. Current Transfer Ratio (typical) vs. Temperature IF=10 mA, VCE=5.0 V Package 103 5 IC IF Table 1. IF=10 mA, VCC=5.0 V, TA=25C, without Saturation Parameter Sym. Value Unit Load Resistance RL 75 Turn-on Time ton 3.0 s Rise Time tr 2.0 Turn-off Time toff 2.3 Fall Time tf 2.0 FCO 250 Cut-off Frequency % 4 3 2 102 1 5 101 -25 0 25 50 TA kHz C 75 Table 2. VCC=5.0 V, TA=25C, with Saturation Parameter Sym. Switching Time by Dash Numbers Unit -1 -2, -3 -4 IF=20 mA IF=10 mA IF=5.0 mA 1000 1000 1000 Turn-on Time ton 3.0 4.2 6.0 s Rise Time 2.0 3.0 4.6 Turn-off Time toff 18 23 25 Fall Time 11 14 15 Load Resistance RL tr tf 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH615A 2-237 February 23, 2000-14 Figure 4. Output Characteristics (typical) Collector Current vs. Collector-emitter Voltage TA=25C Figure 7. Permissible Pulse Handling Capability. Forward Current vs. Pulse Width Pulse cycle D=parameter, TA=25C 104 mA 5 30 IF=14 mA mA IC IF 12 mA 20 D= 0 0.005 0.01 0.02 0.05 0.1 103 10 mA D= tp tp IF T T 5 8.0 mA 10 1.0 mA 6.0 mA 102 4.0 mA 5 2.0 mA 101 10-5 0 0 5 10 0.2 0.5 DC V 15 10-4 10-3 10-2 10-1 100 s 101 tp VCE Figure 8. Permissible Power Dissipation vs. Ambient Temperature Figure 5. Diode Forward Voltage (typical) vs. Forward Current 120 1.2 V mA 25 50 75 VF 90 1.1 IF 60 1.0 30 0 0.9 10-1 100 101 0 102 mA 25 50 Figure 6. Transistor Capacitance (typical) vs. Collectoremitter Voltage TA=25C, f=1.0 MHz 75 C 100 TA IF Figure 9. Permissible Diode Forward Current vs. Ambient Temperature 200 20 mW pF C 150 Transistor 15 Ptot 100 Diode 10 CCE 50 5 0 0 10-2 0 10-1 10-0 Ve 101 V 25 50 75 C 100 TA 102 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH615A 2-238 February 23, 2000-14