2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–236 February 23, 2000-14
SFH615A
5.3 kV
TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at
I
F
=10 mA
– SFH615A-1, 40–80%
– SFH615A-2, 63–125%
– SFH615A-3, 100–200%
– SFH615A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
•
Withstand Test Voltage, 5300 V
RMS
•
High Collector-Emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH615A features a large variety of transfer ratio,
low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plas-
tic DIP-4 package.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
Specifications subject to change.
V
DE
Maximum Ratings
Emitter
Reverse Voltage ...............................................................................6.0 V
DC Forward Current ...................................................................... 60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................2.5 A
Total Power Dissipation .............................................................. 100 mW
Detector
Collector-Emitter Voltage...................................................................70 V
Emitter-Collector Voltage..................................................................7.0 V
Collector Current ........................................................................... 50 mA
Collector Current (t
P
≤
1.0 ms) ...................................................... 100 mA
Total Power Dissipation .............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74, t=1.0 s ....................................................... 5300 V
RMS
Creepage ....................................................................................
≥
7.0 mm
Clearance....................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector .................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1................................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range ............................................–55 to +100
°
C
Junction Temperature..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) .......................................... 260
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
1
2
4
3
Anode Collector
Cathode Emitter
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH615A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–237 February 23, 2000-14
Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0
V)
and Collector-emitter
Leakage Current
Characteristics
(
T
A
=25
°
C)
Table 1.
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C, without Saturation
Table 2.
V
CC
=5.0 V,
T
A
=25
°
C, with Saturation
Parameter -1 -2 -3 -4
I
C
/
I
F
(
I
F
=10 mA) 40–80 63–125 100–200 160–320
I
C
/
I
F
(
I
F
=1.0 mA) 30(>13) 45(>22) 70(>34) 90(>56)
Collector-Emitter
Leakage Current,
I
CEO,
V
CE
=10 V
2.0(
≤
50) 2.0(
≤
50) 5.0(
≤
100) 5.0(
≤
100)
Parameter
Sym. Value Unit Condition
Emitter (IR GaAs)
Forward Voltage
V
F
1.25(
≤
1.65) V
I
F
=60 mA
Reverse Current
I
R
0.01(
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
0
13 pF
V
R
=0 V,
f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W —
Detector (Si Phototransistor)
Capacitance
C
CE
5.2 pF
V
CE
=5.0 V,
f=1.0 MHz
Thermal Resistance
R
thJA
500 K/W —
Package
Collector-Emitter
Saturation Voltage
V
CEsat
0.25(
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance C
C
0.4 pF —
Parameter Sym. Value Unit
Load Resistance
R
L
75
Ω
Turn-on Time
t
on
3.0
µ
s
Rise Time
t
r
2.0
Turn-off Time
t
off
2.3
Fall Time
t
f
2.0
Cut-off Frequency F
CO
250 kHz
Parameter Sym. Switching Time by Dash Numbers
Unit
-1
I
F
=20 mA
-2, -3
IF=10 mA
-4
IF=5.0 mA
Load
Resistance
RL1000 1000 1000 Ω
Turn-on Time ton 3.0 4.2 6.0 µs
Rise Time tr2.0 3.0 4.6
Turn-off Time toff 18 23 25
Fall Time tf11 14 15
Figure 1. Switching Times (Typical) Linear Operation
(without saturation)
Figure 2. Switching Operation (with saturation)
Figure 3. Current Transfer Ratio (typical) vs. Temperature
IF=10 mA, VCE=5.0 V
RL=75 Ω
VCC=5 V
IC
47 Ω
IF
I
F
1 kΩ
V
CC
=5 V
47 Ω
–25 0 25 50 °C 75
103
102
101
5
5
%
I
C
I
F
T
A
4
3
2
1
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH615A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–238 February 23, 2000-14
Figure 4. Output Characteristics (typical) Collector Current
vs. Collector-emitter Voltage T
A=25°C
Figure 5. Diode Forward Voltage (typical) vs. Forward
Current
Figure 6. Transistor Capacitance (typical) vs. Collector-
emitter Voltage T
A=25°C, f=1.0 MHz
30
20
10
0
0 5 10 V 15
IF=14 mA
2.0 mA
4.0 mA
6.0 mA
8.0 mA
10 mA
12 mA
1.0 mA
mA
IC
VCE
VF
IF
25°
50°
75°
1.2
1.1
1.0
0.9
10–1 100101mA 102
V
20
15
10
5
0
pF
C
Ve
CCE
10–2 10–1 10–0 101 V 102
Figure 7. Permissible Pulse Handling Capability. Forward
Current vs. Pulse Width Pulse cycle D=parameter, T
A=25°C
Figure 8. Permissible Power Dissipation vs. Ambient
Temperature
Figure 9. Permissible Diode Forward Current vs. Ambient
Temperature
IF
tp
10–510–410–310–210–1100 s101
104
103
102
101
5
5
5
mA
D= tp
T
tp
IF
T
D= 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DC
120
90
60
30
0
0 25 50 75 °C 100
IF
mA
TA
200
150
100
50
0
0 25 50 75 °C 10
0
Ptot
mW
Diode
Transistor
TA
