BC857CWE6327XT - INFINEON TECHNOLOGIES AG

2011-09-19

1

BC857...-BC860...

PNP Silicon AF Transistor

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 hz and 15 kHz

• Complementary types:

BC847...-BC850... (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q1011)

1BC857BL3 is not qualified according AEC Q101

Type Marking Pin Configuration Package

BC857A

BC857B

BC857BL3*

BC857BW

BC857C

BC857CW

BC858A

BC858B

BC858BW

BC858C

BC858CW

BC859C

BC860B

BC860BW

BC860CW

3Es

3Fs

3F

3Fs

3Gs

3Js

3Ks

3Ls

4Cs

4Fs

4Gs

1=B

2=E

3=C

-

SOT23

TSLP-3-1

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

* Not qualified according AEC Q101

2011-09-19

2

BC857...-BC860...

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BC857..., BC860...

BC858..., BC859...

VCEO

45

30

V

Collector-base voltage

BC857..., BC860...

BC858..., BC859...

VCBO

50

30

Emitter-base voltage VEBO 5

Collector current IC100 mA

Peak collector current, tp ≤ 10 ms ICM 200

Total power dissipation

TS ≤ 71 °C, BC857-BC860

TS ≤ 135 °C, BC857BL3

TS ≤ 124 °C, BC857W-BC860W

Ptot

330

250

mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1)

BC857-BC860

BC857BL3

BC857W-BC860W

RthJS

≤ 240

≤ 60

≤ 105

K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-09-19

3

BC857...-BC860...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC857..., BC860...

IC = 10 mA, IB = 0 , BC858..., BC859...

V(BR)CEO

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC857..., BC860...

IC = 10 µA, IE = 0 , BC858..., BC859...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

0.015

5

µA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

hFE

-

125

220

420

140

250

480

180

290

520

-

250

475

800

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1Pulse test: t < 300µs; D < 2%

2011-09-19

4

BC857...-BC860...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 1.5 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 8 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h11e

-

2.7

4.5

8.7

-

kΩ

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h21e

-

200

330

600

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h22e

-

18

30

60

-

µS

Noise figure

IC = 0.2 mA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, BC859, BC850

F- 1 4 dB

Equivalent noise voltage

IC = 200 mA, VCE = 5 V, RS = 2 kΩ,

f = 10...50 Hz, BC860

Vn- - 0.11 µV

2011-09-19

5

BC857...-BC860...

DC current gain hFE = ƒ(IC)

VCE = 1 V

10 10 10 10

EHP00382

h

mA

-2 -1 12

FE

3

10

2

0

10

5

10

1

0

10

5

555

100

25

-50

C

Ι

C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 20

10 0

EHP00380

VCEsat

10

mA

10

2

1

0

-1

5

V

0.3 0.5

100

25

-50

0.1 0.2 0.4

C

Ι

C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 20

0

10

EHP00379

BEsat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

C

25

C

100

C

-50

C

Collector cutoff current ICBO = ƒ(TA)

VCBO = 30 V

10 0 50 100 150

EHP00381

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

C

2011-09-19

6

BC857...-BC860...

Transition frequency fT = ƒ(IC)

VCE = 5 V

10 10 10 10

EHP00378

f

mA

MHz

-1 0 1 2

5

T

3

10

2

1

10

5

C

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 4 8 12 16 V22

VCB(VEB

0

1

2

3

4

5

6

7

8

9

10

pF

12

CCB(CEB)

CCB

CEB

Total power dissipation Ptot = ƒ(TS)

BC856-BC860

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

Total power dissipation Ptot = ƒ(TS)

BC857BL3

0 15 30 45 60 75 90 105 120 °C 150

TS

0

25

50

75

100

125

150

175

200

225

250

mW

300

Ptot

2011-09-19

7

BC857...-BC860...

Total power dissipation Ptot = ƒ(TS)

BC857W-BC860W

0 15 30 45 60 75 90 105 120 °C 150

TS

0

25

50

75

100

125

150

175

200

225

250

mW

300

Ptot

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC857/W-BC860/W

10

EHP00377

-6

0

10

5

D

=

5

101

5

102

3

10

10-5 10-4 10-3 10-2 100

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

tp

=

DT

tp

T

totmax

tot

PDC

P

p

t

Permissible Puls Load RthJS = ƒ (tp)

BC857BL3

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-1

10

0

10

1

10

2

10

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC857BL3

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

Ptotmax/ PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2011-09-19

8

BC857...-BC860...

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25

M

BC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2011-09-19

9

BC857...-BC860...

Package SOT323

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15 +0.1

-0.05

0.3+0.1

±0.1

0.9

12

3

A

±0.2

2

-0.05

0.650.65

M

3x

0.1

0.1 MIN.

0.1

M

0.2 A

0.2

4

2.15 1.1

8

2.3

Pin 1

2005, June

Date code (YM)

BCR108W

Type code

0.6

0.8

1.6

0.65

Manufacturer

2011-09-19

10

BC857...-BC860...

Package TSLP-3-1

2

3

1

0.4

+0.1

BFR193L3

Type code

Pin 1 marking

Laser marking

0.76

4

1.16

0.5

Pin 1

marking

8

Reel ø180 mm = 15.000 Pieces/Reel

For board assembly information please refer to Infineon website "Packages"

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Stencil aperturesCopper Solder mask

0.275

0.2

0.315

0.945

0.45

0.17

0.355

0.2

0.35

0.225

1

0.6

0.225

0.15

0.35

0.3

R0.1

1

2

±0.05

0.35

±0.035

2x0.15

1)

Top view Bottom view

1) Dimension applies to plated terminal

±0.035

0.5

1)

±0.05

0.6

3

±0.05

0.65

±0.035

2x

0.25

1)

±0.035

0.25

1)

1

±0.05

Pin 1

marking

0.05 MAX.

2011-09-19

11

BC857...-BC860...

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.