GE SOLID STATE ~ 1 DE j3a7soa1 OOL?4SE 3 [~ 3875081 G E SOLID STATE _ SS General-Purpose Power Transistors____ 3 '2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File Number 1061 Silicon P-N-P Epitaxial-Base * High-Power Transistors Rugged Devices, Broadly Applicable For Industrial and Commerical Use Features: TERMINAL DESIGNATIONS High-dissipation capability Low saturation voltages Maximum sale-area-of-operation curves - fr=2 MHz High gain at high current c {FLANGE} Applications: Series and shunt regulators High-tidelity amplifiers meee = Power-switching circuits = Solenoid drivers JEDEC TO-204AA The RCA2N6609, MJ15004, RCA9116C, RCA9116D, and RCA9116E are ballasted epitaxial-base silicon p-n-p transistors featuring high gain at high current. They may be used as complements to the n-p-n types RCA3773, MJ 15003, RCA8638C, RCA863ED, and RCA8638E, respectively. They differ in voltage ratings and in the currents al which the parameters are controlled, All are supplied in the steel JEDEC TO-204AA packages. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6609 MJ15004 RCAS116C RCA9116D RCA9T16E "NM GGO cee serestenseneeasereennenceseees -160 -140 -140 -120 -100 Vv Veex(Sus) Vag = 1.8 Vj Raz = 100 Qicseeesaeeees -160 - - - - Vv Veen(sus)} . Rae = 1001) .icccrreccerevevsenaee -150 -150 -150 -130 -110 Vv Veeo(SUS) .eecececceneee -140 140 -140 120 -100 Vv Vesa cressserece 7 6 Vv Nose eeveceeeeaee -16 -200 A le... ~4 6 A . Py At Te S 28C occ ceeeeeere wenn 150 250 200 200 200 Ww At Tc > 26C Derate Linearly........ 0.857 1.43 1.14 WPGC * Toto Ta csesceves tae eeaseeres veneeevee ee BS to #200 C Th At distance = 1/32 in. (0.8 mm) from seating plane for 10s max. ......06s 265 230 C * 2N-type in accordance with JEDEC registration data format JS2SROF1, tsaue 1. 460wae a ye tatty gate * i GE SOLID STATE tz O1 DE 367s081 oo1r4s? 5 T | 3875081 GE SOLID STATE t O1E 17457" 0 TBZ*(S t ELECTRICAL CHARACTERISTICS, at Case Temperature (To) = 25C Unless Otherwise Specified General-Purpose Power Transistors be 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E TEST CONDITIONS LIMITS VOLTAGE | cuR.- CHARAC- V de RENT UNITS TERISTIC Ade 2N6609 MJ15004 Vee | Vee Ic Min. | Max. | Min. Max. lego ~1608 - 4) - * 1408 _ -2 - ~1 IcEx 140 1.5 - - - -0.1 Icex 140 1.5 - - ~ 2 Tc = 150C . * icey ~140 1.5 ~- 2 - - mA * loey 140 1.5 - ~10 - ~ Te= 150C IcEO -140 ~ - - -0,25 tgs 0 * ~120 - 10 - - lego * 7 _ 5 _ =- 5 - - - -0.1 *lhee 4 e 15 60 - ~- + ~4 166 5 | - - - -2 5e } - 25 150 ~2 ~19e | - 10 ~ Veex(sus)> 1.5 | -0.2 |-160 | - - - Ree = 1002 Vcertsus)> Ree < 1002 ~0.2 ]-150 | - | -150 ~ *| Vegolsus}b -0.2 |-140 | - | -140 - VeEBO _ _ d le=-1mA 7 6 ~ 4 -s | - [29 [= - Vv VBE -2 be | - - ~2 Vcelsat) *| tq=~3.2A i6 | -4 - - *] =~0.8A ~ge | ~1.4 - - =0,5A 5e | - - -1 's/b -100 -1.5 - -1 - th=1s 50 - - 5 - A nonrep. . Ihgel *! =0.05 4 +1 4|- - - =0.5MHz | -10 ~0.5 4} - - fy 2 _ _ MHz *lh fe ~ - _ _ _ f=1 kHz 4 ' 40 Cob Poot MH: | 71 1000 1000 pF Raic ~10 -10 - wiz | - 0.7 | cww See page 3 for footnotes. 461G bk SULLY StAIC Ub DE gieesoal OOL?4Ss 7 | - eee thin. 3875081 G E SOLID STATE O1E 17458 DT-S37/S: General-Purpose Power Transistors By 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25C Unless Otherwise Specified (Contd) TEST CONDITIONS LIMITS CHARAC VOLTAGE RENT e . Vide ITS TERISTIC Ade RCA9116C RCA9116D RCAQTIGE | UNIT: Vee | Vee! 'c Min. Max. }| Min. Max. | Min. | Max. 1404 - -1 - - - - IcBo 1204 - - _ -1} - - 1004 - - - - - -1 I -140 1.6 Jo -1 - - - - CEX -120 | 1.5 - - - =i} - | - Icex 140 | 1.5 -5 ~ - - - To= 150C |-120 | 1.5 - - - -5] - - mA Iceo -70 _ -1 - _ = _ Ip =0 -60 - - - -1]} - - lego 5 - -1 - -F] -I hee 2 5e 25 150 25 160] - 2 7.5 _ = ~ - 10 100 -2 10 10 _ 10 = _ - Voert(sus)> / . _ Rpg < 1002 0.2 150 130 |-110 Vegolsus} -0.2 | -140]} - -120| - |-100} - VeBo 0 -5| - -5| - 5} Vv le =-1mA Vee -2 -7.5 [ - - - ~ |- -3 2 5e - 2 - -2{ - Vcglsat) Ip =0.75A 7.5 ~ _ - - - -1.5 =0.5A pe | -1} -1{ - IS/b to =1s 35 5.71 - 5.71 - - - A nonrep, 25 - - - - -8 - heel f= 0.5 MHz 10 0.5 4 - 4 - 4 - ft 2) - 2; - 2] - | MHz fF Cob 108 ~ 1000 | 1000 | | 1000 | pF f= 0.1 MHz Rasc 10 -10 - 10875 | ~ [0875] - [0.875 | C/W * 2N-types in accordance with JEDEC registration data format JS25 ROF1, Issue 1. . 4Vcg 6 CAUTION: Sustaining voltages Vec_ex(tsus, Vce_r (sus), and Pulsed; pulse duration = 300 ys, Veeolsus) MUST NOT be measured on a curve tracer. See duty factor = 1.8%. Figs. 8 and 9. d Measured at Ip =-0.1 mA. 462. 20=.-<~;772CGE SOLID STATE OL DE psa7sos. 0017459 4 a 3875081 G E SOLID STATE oie 17459 0 TBSIS General-Purpose Power Transistors 2 h 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E 100.1 CASE TEMPERATURE (Tc l#25*C el (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) 4 i Suiseeeeds Ei 8 4 ) ay Sth i . H chy ato ft. oh cH 2 oS Ses ttt! Seg f Sees bes = it E ft Ww | i g OC_OPERATIO! s DISSIPATION> LINITED Fa} Hii = 0 Tie TE-2N660 C ge + oO q 5 EEE i ; MJI5004 g SEE SE ET Hine 4 q h g sas : + ate y RCAQTIES t RCASIIGD a SAN 0 : tale * , RCAGIIGE 4 4} tid He E Hil abet Ha AMEE Vogg MAX.*140V Voeo MAX.120 V IRCASII6D) atts tet Ly angeog, mM uls004, Veeo MAX = 1OOV (RCA SIG EEE | | RC ASHIEC) =f) | || i 120 4 al 4 6 of 2 4 6 abs 0 2 6 ay COLLECTOR-TO-EMITTER VOLTAGE (Vcp) 92C8-30076A! Fig. 1 - Maximum operating areas for all types. COLLECTOR-TO-EMITTER VOLTAGE (te te284e 2350 50S ODS DOD -001 0.1 CASE TEMPERATURE {Tc} C COLLECTOR CURRENT (Lo}-A 928-S0077 92U8-.4h Fig, 2 - Current derating curve for all types. Fig. 3 - Typical dc beta characteristics as a function of collector current for all types. MITTER VOLTAGE {% COLLECTOR CURRENTII)-A 92CS-30078 BASE-TO-EWITTER VOLTAGE (Vgp)V 928-30081 Fig. 4 - Typical saturation voltage characteristics for all types. Fig. 5 - Typical input characteristics for all types, 463wu EE SOLID STATE OL DE Bss7s081 oo174eo 5 a 3875081 Ge SOLID STATE. Oi 17460 0 TeBS IS e General-Purpose Power Transistors 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E COLLECTOR SUPPLY VOLTAGE [Vec}e~30 -Igi*Taze 1710 CASE TEMPERATURE (Yp}* 28C o COLLECTOR CURRENT II }-A j z -e 2 5 3 E ry itt BASE*TO-EMITTER VOLTAGE (Vpel-V "" ses-soors cOLLecToa Current (t= a vies-s0080 Fig. 6 - Typical transier characteristics for all types. Fig. 7 - Typical saturatad-switching times for all types, aT ew 6 genes CONNECTED Jv W. MILLER NO, 2861, OR EQUIVALENT OSCILLOSCOPE INPUT L OR EQUIVALENT * CLARE MERCURY RE RELAY MODEL Ai 1945 OR EQUIVALENT HORIZ, GND - QTO SV (500 mA) TEST +O *-Overt Loa Veer (tus) een L*21mH FOR Vego(sus) Veeo (sus) CEO ceoteu AND Veer {sus} L= 7m FOR Vex (sus) Rei00 0 se3- soray Fig. B - Circuit used to measure sustaining voltages Vceo(sus), Vcern(Sus), and Vcex(sus) for ail types, COLLECTOR -TO-EMITTER VOLTAGE (Veg}--V Ww 5 Vor o te Og a 5 g 5 Be Bt : I 6H 3h Weer (na) a~ : Z : Vex (us) te 28 88 ouTPuT as tae TURI WAVE FORM NOTE: The mstauing Velagis Vegolnal, Voentaal or, Veextad or z - TURN ON}e- oA ofr l. tecomptatta whan the thot (a te th lott and below pount A, {Por afoen 8 TW TIME of Garret aed rologe, vee Electr leal Char acta ogt ic, S205 ~ 30144 92C$~1S619AL Fig. 9- Oscilloscope display for measurement of sustaining Fig. 10 - Oscilloscope display for measurement of switching times voltages. (Test clrcult shown In Fig. 8}. for all types.