DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING (Unit: mm) * High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) * High Voltage: VCEO = 50 V 0.4 +0.1 -0.05 2.8 0.2 +0.1 0.65 -0.15 1.5 TYP. ABSOLUTE MAXIMUM RATINGS 2 +0.1 3 1 0.4 -0.05 2.9 0.2 0.95 0.95 TYP. TYP. Maximum Voltages and Current (TA = 25C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA Maximum Power Dissipation Total Power Dissipation at 25C Ambient Temperature PT 200 mW Maximum Temperatures Junction Temperature Tj 150 C Storage Temperature Range Tstg -55 to +150 C 1: Emitter 2: Base 3: Collector to 0.1 1.1 to 1.4 0.16 +0.1 -0.06 0.3 TYP. Marking MAX. UNIT TEST CONDITIONS ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTIC SYMBOL MIN. TYP. Collector Cutoff Current ICBO 0.1 A VCB = 60 V, IE = 0 A Emitter Cutoff Current IEBO 0.1 A VEB = 5.0 V, IC = 0 A DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA Note Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA Note Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA Note 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IE = -10 mA Base to Emitter voltage VBE Gain Bandwidth Product fT 250 MHz Cob 3.0 pF Output Capacitance 0.55 Note VCE = 6.0 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Marking L4 L5 L6 L7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17115EJ2V0DS00 (2nd edition) (Previous No. TC-1481C) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. c 1984 2SC1623 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 200 180 Free air 160 140 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 140 160 180 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 1.0 0.98 0. 7 0. 0.6 0.5 0.4 80 60 40 IC - Collector Current - mA IC - Collector Current - mA 100 0.3 0.2 40 IB = 0.1 mA 20 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 45 8 35 30 6 25 20 4 15 10 2 IB = 5.0 A 0 0 0 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - V 0 2.0 0 0 10 20 30 40 VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 50 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6.0 V Pulsed 500 300 100 1000 VCE = 6.0 V 1.0 V 0.5 V 50 30 10 5 3 0.1 0.2 2 hFE - DC Current Gain hFE - DC Current Gain 1000 500 300 TA = 75C 25C -25C 100 50 30 10 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 5 3 0.1 0.2 Data Sheet D17115EJ2V0DS 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 2SC1623 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V VCE(cat) - Collector Saturation Voltage - V 100 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.3 -25 C TA = 75 C 5 2 1 25C IC - Collector Current - mA VCE = 6.0 V 50 Pulsed 20 10 0.4 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V 1.0 10 1 0.2 IC = 50 A * IB 20 10 VCE(sat) 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA 100 2000 1000 VCE =10 V 6 V 500 200 2V 1V 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 IE - Emitter Current - mA 20 5 E =0A ) 1 0.5 0.5 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V VEB - Emittor to Base Voltage - V 1000 80 60 40 20 0 40 30 20 10 50 hie - Input Impedance - k hoe - Output Admittance - S 200 400 600 800 hFE - DC Current Gain ) 2 50 hre - Voltage Feedback Ratio - x10-4 100 400 200 =0A INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 600 0 C Cob (I 0.2 0.1 0.1 0.2 -50 -100 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 800 Cib (I 10 SMALL SIGNAL CURRENT GAIN vs. DC CURRENT GAIN 1000 50 100 f = 1.0 MHz 50 5000 Cib - Input Capacitance - pF Cob - Output Capacitance - pF fT - Gain Bandwidth Product - MHz VBE(sat) 0.5 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 10000 hfe - Small Signal Current Gain IC = 50 A * IB 20 10 2 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 0 Pulsed 5 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 40 30 20 hoe hre hie 10 0 Data Sheet D17115EJ2V0DS 0 200 400 600 800 hfe - Small Signal Current Gain 1000 3 2SC1623 NORMALIZED h-PARAMETER vs. COLLECTOR CURRENT 10 hre He - Normalized h - Parameter He - Normalized h - Parameter 5 hoe 2 hfe hfe 0.5 hoe hre 0.2 0.1 4 3 VCE = 6.0 V f = 1.0 kHz he(IC) He = he(IC = 1.0 mA) hie 1 NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE ICE = 1.0 V f = 1.0 kHz He = he(VCE) he(VCE = 6 V) 2 hoe hre hfe hie hre 1 hfe hie hoe hie 0.1 0.2 0.5 1 2 IC - Collector Current - mA 5 10 0 Data Sheet D17115EJ2V0DS 10 20 VCE - Collector to Emitter Voltage - V 30 2SC1623 * The information in this document is current as of March, 2004. 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