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SILICON TRANSISTOR
2SC1623
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17115EJ2V0DS00 (2nd edition)
(Previous No. TC-1481C)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark shows major revised points.
1984
FEATURES
• High DC Current Gain:
h
FE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25°C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC 100 mA
Maximum Power Dissipation
Total Power Dissipation
at 25°C Ambient Temperature PT 200 mW
Maximum Temperatures
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1
µ
A VCB = 60 V, IE = 0 A
Emitter Cutoff Current IEBO 0.1
µ
A VEB = 5.0 V, IC = 0 A
DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mANote
Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mANote
Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mANote
Base to Emitter voltage VBE 0.55 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mANote
Gain Bandwidth Product fT 250 MHz VCE = 6.0 V, IE = −10 mA
Output Capacitance Cob 3.0 pF VCE = 6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking L4 L5 L6 L7
hFE 90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5 TYP. 0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
TYP.
0.95
TYP.
2.9 ±0.2
0.4
+0.1
–0.05
0.3
TYP.
1.1 to 1.4
Marking
0.16
+0.1
–0.06
t
o 0.1
1: Emitter
2: Base
3: Collector
2
13
Data Sheet D17115EJ2V0DS
2
2SC1623
TYPICAL CHARACTERISTICS (TA = 25°C)
Free air
200
180
160
140
120
100
80
60
40
20
0–20 0 20 40 60 80 100 120 140 160 180
T
A
- Ambient Temperature - ˚C
P
T
- Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
80
60
40
20
0
I
C
- Collector Current - mA
V
CE
- Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0 0.4 0.8 1.2 1.6 2.0
1.0
0.9
0.8
0.7
0.3
0.2
I
B
= 0.1 mA
0.6
0.5
0.4
45
40
30
20
25
15
10
10
8
6
4
2
00 1020304050
0
I
C
- Collector Current - mA
V
CE
- Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
h
FE
- DC Current Gain
I
C
- Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
- DC Current Gain
I
C
- Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 6.0 V
Pulsed
–25˚C
25˚C
T
A
= 75˚C
0
I
B
= 5.0 A
35
V
CE
= 6.0 V
1.0 V
0.5 V
0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
1000
500
300
100
50
30
10
5
3
0.1
1000
500
300
100
50
30
10
5
3
µ
Data Sheet D17115EJ2V0DS 3
2SC1623
V
CE
= 6.0 V
Pulsed
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
BE
- Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
- Collector Current - mA
T
A
= 75˚C
25˚C
–25˚C
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2 V
1 V
10000
2000
6 V
V
CE
=10 V
5000
1000
200
500
100
20
50
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
f
T
- Gain Bandwidth Product - MHz
I
E
- Emitter Current - mA
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
I
C
= 50 A I
B
20
10
I
C
= 50 A I
B
20
10
0.1 0.2 10.5 2 5 10 20 50 100
I
C
- Collector Current - mA
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
BE(sat)
- Base Saturation Voltage - V
V
CE(cat)
- Collector Saturation Voltage - V
V
CB
- Collector to Base Voltage - V
V
EB
- Emittor to Base Voltage - V
INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
C
ib
- Input Capacitance - pF
C
ob
- Output Capacitance - pF
f = 1.0 MHz
C
ib
(I
C
= 0 A)
C
ob
(I
E
= 0 A)
100
20
50
10
2
5
1
0.2
0.5
0.1
0.1 0.2 0.5 1 2 5 10 20 50 100
1000
800
600
400
200
0
h
fe
- Small Signal Current Gain
h
FE
- DC Current Gain
SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN
0 200 400 600 800 1000
V
CE
= 6.0 V
I
C
= 1.0 mA
f = 1.0 kHz
h
ie
- Input Impedance - kΩ
h
fe
- Small Signal Current Gain
INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN
50
40
30
20
10
0
200 400 600 800 1000
V
CE
= 6.0 V
I
C
= 1.0 mA
f = 1.0 kHz
h
re
- Voltage Feedback Ratio - ×10
–4
50
40
30
20
10
0
h
oe
- Output Admittance - S
100
80
60
40
20
0
h
oe
h
re
h
ie
V
BE(sat)
V
CE(sat)
Pulsed
µ
•
•
Data Sheet D17115EJ2V0DS
4
2SC1623
IC - Collector Current - mA
NORMALIZED h-PARAMETER vs.
COLLECTOR CURRENT
He - Normalized h - Parameter
hie
hre
hfe
hoe
hie
hre
hfe
hoe
VCE = 6.0 V
f = 1.0 kHz
he(IC)
he(IC = 1.0 mA)
He =
10
2
5
1
0.2
0.5
0.1 0.1 0.2 0.5 1 2 5 10
ICE = 1.0 V
f = 1.0 kHz
h
e
(V
CE
)
h
e
(V
CE
= 6 V)
He =
3
2
1
0
VCE - Collector to Emitter Voltage - V
NORMALIZED h-PARAMETER vs.
COLLECTOR TO EMITTER VOLTAGE
He - Normalized h - Parameter
10 20 30
hoe
hre
hfe hie
hfe hie
hre
hoe
2SC1623
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1