© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSX TJ= 25C to 150C 1000 V
VGSX Continuous 20 V
VGSM Transient 30 V
PDTC= 25C60W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
DS100182C(9/17)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSX VGS = - 5V, ID = 25A 1000 V
VGS(off) VDS = 25V, ID = 25A - 2.0 - 4.0 V
IGSX VGS = 20V, VDS = 0V 50 nA
IDSX(off) VDS = VDSX, VGS= - 5V 1 A
TJ = 125C 15A
RDS(on) VGS = 0V, ID = 400mA, Note 1 21
ID(on) VGS = 0V, VDS = 50V, Note 1 800 mA
Depletion Mode
MOSFET
N-Channel
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
VDSX = 1000V
ID(on) > 800mA
RDS(on)
21
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
G
S
D (Tab)
G
D
S
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 400mA, Note 1 330 560 mS
Ciss 325 pF
Coss VGS = -10V, VDS = 25V, f = 1MHz 24 pF
Crss 6.5 pF
td(on) 28 ns
tr 57 ns
td(off) 34 ns
tf 48 ns
Qg(on) 14.6 nC
Qgs VGS = 5V, VDS = 500V, ID = 400mA 1.2 nC
Qgd 8.3 nC
RthJC 2.08C/W
RthCS TO-220 0.50 C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 800V, ID = 45mA, TC = 75C, Tp = 5s 36 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VSD IF = 800mA, VGS = -10V, Note 1 0.8 1.3 V
trr 1.03 μs
IRM 7.40 A
QRM 3.80 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 5V, VDS = 500V, ID = 400mA
RG = 10 (External)
IF = 800mA, -di/dt = 100A/s
VR = 100V, VGS = -10V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
02468101214
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
2V
1V
- 2V
0V
- 1V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 1020304050607080
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
2V
1V
- 2V
- 1V
0V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
1V
- 1V
- 2V
0V
- 3V
Fig. 4. Drain Current @ T
J
= 25
o
C
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
V
DS
- Volts
I
D
- Amperes
V
GS
= - 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.50V
- 4.00V
- 4.25V
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
-4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8
V
GS
- Volts
R
O
- Ohms
∆
V
DS
= 700V - 100V
T
J
= 25
o
C
T
J
= 100
o
C
Fig. 5. Drain Current @ T
J
= 100
o
C
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
V
DS
- Volts
I
D
- Amperes
V
GS
= - 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 0.4A
Fig. 8. R
DS(on)
Normalized to I
D
= 0.4A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 0V
5V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 9. Input Admittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fig. 10. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
V
DS
= 30V
25
o
C
125
o
C
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
V
GS
= -10V
T
J
= 25
o
C
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV / V
GS(off)
- Normalized
V
GS(off)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5V
© 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N100D2(1C)8-25-09
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 14. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 2 4 6 8 10121416
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 400mA
I
G
= 1mA
Fig. 13. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 17. Maximum Transient Thermal Impedance
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25
o
C
0.01
0.10
1.00
10.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
25μs
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75
o
C
0.01
0.10
1.00
10.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 75
o
C
Single Pulse
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
25μs
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E A
c2
H
A1
A2
L2
L
A
e c
0
e1 e1 e1 e1 e1
OPTIONAL 5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
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