FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a+ + t + 4% + HF * 108 & XX t (T= 25C) a A & ff (Ta = 25C) * " #%| th 4 | i| HE G&) Veo ) Veso | Ic Pe T; | cao eA | He Rid -e rv Ahpe| os 4 7 A] Mee i's nt ns fat Cos pfetiye Mi 2% ) | CV) | 4nA | (mW) CC) | (aA) | VeB(V) Vee(V)Ic(mA) Vea(V)|Te(mA)! Aye | (0) [X10 (uo) | (Me) | (PF) (n) | 2sce2d | % [il] SW Si.EP| 40 | 4.5 | 200 | 300 | 150 | 0.5 | 20 60 1 10 br S308, #7<90nS 28 | KT-2103 625 626|H @\RF:Cony-Mixi sik | 50 | 5 | 200 | 750 | 175 | 0.1 | 20 10 | -10 | 130 350") 4 45 * | 848 627 | @43|/RF.AF.Sw| sit] 200 | 4 | 100 | 700 | 175 | 5 | 100 | 80 | 10 | 50 | 6 | 2 | 50 | 1000| 08 | 10 |] 2 | 6 25 (8B 628) %|/RF.PA Si.E | 40 4 | soo [2-5] 175 | 0.4 | 20 | 40 | 10 | 100 | 10 | 30| 40 |ffZ260Me, Vee15V) mo*| 5.5 | 40 *|94B 629) v=|RF-Cony si DBI 18 30 | 150 | 120 | 0.2 | 15 30 3 1 6 | -1| 36 800 *| 1.3 | (yZ28 | 38 * 630 631 | Y=1RF.AF.LN | Si.E | 25 6 100 | 250 | 120 { 0.2 25 350 3 1 6 | -0.1 36k | 2.4 | 3.3 | 140") 4.5 genet 38 632| # |RFLLN " 40 6 {| 100 | 250 | 120 | 0.2 | 25 | 350 | 3 1 6 |-0.1 36k | 2.4 | 3.3 | 140") 4.5 | Ssh] 38 633} |RF-Cony-Mix) 25 6 | 100 | 250 | 120 | 0.2 | 25 | 400 | 3 1 6 | -2 te < 6008, 1/< 1500S | agg") 4.5 | Ssemihs| 38 634, 6 | * 40 6 | 100 | 250 | 120 | 0.2 | 25 | 400 } 3 1 6 | -2 te < 6005. 4< 18005, | 149"! 4.5 | Cgentta | 38 685/A #/PA Si.E | 65 4 | 1.54 |. 20M) 175 3 18 |15~200] 10 | 500 | 18 |-150| 50 [PRM Mr, vee18Vv) 450*| 10 10 * | 11 636) | | | o4 [| 3a | 20W) 175 | to | 18 |15~so0] to | 1A | 18 | 150) 50 | G2 3some 350") 16 | 8 1111 637, | " ao | 4 | 1A [.2OW) as | 10 | 20 | >20 | 13.5 | 500 | 13.5 | 100| 50 500*| 16.5 | 10 */ 118 638) | # | 4 | 4 | 2A | 20M) a5 | 20 | 20 | >20 | 13.5 | 1A | 13.5 | 200} 50 4oo"| 28 | 8 | atl 639/ {SW " 40 | 5 | 200 | 360 | 200 | 0.2 | 20 | 90 1 10 | 10 | 10 ton S12 nS .to/<18nS | 759") 1.8 49 640) |RF " 30 s | 100 | 150 | 150 | 0.1 | 25 | 270 | 3 | 05 | 3 |-0.5] 300 15k | 16 | 3 | 100*| 8 30 *} 23 641/H Z|/SW.RF |SiEP| 40 5 | 100 } 100 | 125 | 0.25 | 20 |45~160) 0.5] 1 10 | 10 pon Boas: = 35nS | ggg") < 6 138 642K | PA Si.TMe| 00] 5 | 1A | 298. 150 | 10 | 500 | 30~160| 15 | 150 | 15 | 200 2") 55 | 10 | 102 TAN 643) 0 | | 1090} 5 | 25] 208) 150 | 10 | 500 | >7 | 15 | 2A | 15 | 200 >2| 80 | 10 | 102 644 (#8 F | RF.AF.LN|SiEP} 30 | 5 50 | 150 | 125 | 1 10 | 250] 5 2 5 | 2 ] 200 | 5000} 0.7 | 10 | 1607} 2.3 | Sine 138 645] 7 |RF-Conv.Mix) 30 5 30 | Mo | 175 | 1 10 | 4 | 10 1 10 | 1 | 100 200") Gye | 22 | 243 646) | PA sitme| 60 | 5 | 4A |25) 150 [toma] 60 | 55 | 4 [2.54] 4 | -100| 70 so"| 110 | 12 | 102 a | 80 | 5 | 5A | 50% 1 150 {aoma] go { ao | 4 | 4A | 10 | 500 43") 160 | 7 | 102 > 648/H x2] RF Si.E | 30 30 | 100 | 150 | o1 | 20 | 280] 6 | 01 | 5 [|o.1| 320 | a7Ka| 1.9 | 12 | 350%) 1.7 | 80 */1e2c 649] 9 |RF.AFL.LN | @ 30 6 | 30 | 200 | 175] 01 | 2 | 10 | 6 | 0.1 | 5 |0.1| 150 | sexe] 9.4 | 3.1 | 2207] 2.7 | 85 |12A 650) 7 | 30 | 6 | 30 | 200 | 175 | o.1 | 20 | a0 | 6 | 0.1 | 5 | 0.1] 300 | 86k] 2.8 | 8.5 | 220| 2.7 | 75 [12A 61H | PA 45 4 | 300 | 750 | 150 | 0.1 | 20 | 20~200| 10 ; 100 | 10 | 30 | 80 nioo*| 2.4 | 27 *!s4B 652) 4 | om " 40 | 3 | 300 | 750 | 150 | 0.2 | 20 | >zo | 10 | 100 | 10 | 30]| 80 nio0*| 2.4 | 27 * | a4B 653| |RF " 25 3 20 | 200 | 150 | 0.1} 12 6 | 2 | 1200 |NESAaB SIM) | i4o9*| 0.6 | 60 |50C