ON CHARACTERISTICS*
Gate Threshold Voltage v~s(tt)) 0.8
Static Drain-Source ““On-Resistance
IrDs(on) -“-l ‘“~
‘(VGS =10 Vdc, ID =0.5 Adc) —
3Vdc
(VDS =,,VGS, ID =1mA) ——.....
Ohm
I(vi; =10 Vdc, 1; =0.5’V, TC =12wc) II5
I–“ 9I
-- ,. II
Drain-Source On-Voltage VDS(on) Vdc..,,.~+$
(VGS =10 V, iD =0.5 Adc) ,::,, —
~(VGS ,= 4.5 V, ID =75 mA) .:’: .’}, ‘> ‘:;’
., 1111
On~State Drain Current :,s.,
>,,. .. .. .>
,. ... Id{onj 75 —IF..:6
I
I
I
Motorola resewes the right to make changea without further notice to anv products herein to improve reliability, function or design.
Motorola does not asaume anv Iiabilitv arising out of the application or use of anv product or circuit described herein; neither doaa it
convey anv license under its patent rights nor the rights of others. Motorola and(MJare registeredtrademarks of Motorola, Inc.
-~MOTOROLAS: Serniconductetirs.S.A. ~~
AVENUE G~NkRAL-EISENHOWER -31023 TOULOUSE CEDEX -FRANCE
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