AQ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling RMS [Fle FIELD EFFECT POWER TRANSISTOR rc C J IRF352,353 13 AMPERES 400, 350 VOLTS RDS(ON) = 0.4.9 N-CHANNEL $s CASE STYLE TO-204AA (TO-3) OIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0. saviels 47) r~ .358(9.09) MAX 086(1 4 fe ova Da. MAX. = Jt SEATING PLANE 9.043(1.09) oy, {fe L .426(10.82) MIN. 0.088087) A 1.050(26.68) MAX.~--*] 0.675(17.15) fl 6.680(16 61) CAST TEMP. REFERENCE POINT 1.197(30.40) 7.177(29.90) 1.573(39.98) MAX, me 225(5.72) DRAIN 0.162(4.09) DIA. i 0:205(5.21) (CASE) 6.15(3.84) 2 HOLES 0.440(11.18) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF352 IRF353 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Reg = 1MO VpaR 400 350 Volts Continuous Drain Current @ To = 25C ID 13 13 A To = 100C 8 8 A Pulsed Drain Current" lpm 52 52 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 26C Pp 150 150 Watts Derate Above 25C 1.2 1.2 w/C Operating a and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rejc 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 159electrical characteristics (Tc = 25C) (untess otherwise specified) | CHARACTERISTIC | SYMBOL {| MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF352 BVoss 400 _ -_ Volts (Vag = OV, Ip = 250 wA) IRF353 350 _ Zero Gate Voltage Drain Current loss (Vps = Max Rating, Veg = OV, Tc = 25C) 250 pA (Vpg = Max Rating, x 0.8, Veg = OV, To = 125C) 1000 Gate-Source Leakage Current (Vgg = 20V) lass - _ +100 nA on characteristics Gate Threshold Voltage To = 25C | Vas(TH) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 uA) On-State Drain Current i 13 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 8A) Rps(ONn) 0.35 0.40 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) Ofs 5.6 8.0 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 2800 3000 pF Output Capacitance Vps = 25V Coss _ 300 600 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 60 200 pF switching characteristics Turn-on Delay Time Vos = 175V ta(on) _ 20 _ ns Rise Time Ip = 8A, Vag = 15V tr _ 25 _ ns Turn-off Delay Time RGen = 500, Res = 12.50 taoff) 110 ns Fall Time (R@s (EQuiv.) = 109) tf _ 70 ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 13 A Pulsed Source Current Ism _ 52 A Diode Forward Voltage Vv _ 09 15 Volt (To = 25C, Vag = OV, Ig = 13A) SD ons Reverse Recovery Time ter 500 _ ns (Ig = 15A, dig/dt = 100A/usec, To = 125C) Qar _ 6.5 _ uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 s 8 8&8 2 AMO xv 'N MAY BE LIMITED BY AREA tp. DRAIN CURRENT (AMPERES) gS 9e7 - ano IRF353 SINGLE PULSE IRF362 To= 28C o n 2 2 4 6 810 20 40 6080100 200 Vos. ORAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 160 CONDITIONS: Ras(on) CONDITIONS: ip = 8.0 A, Vgg = 10V V@g(TH) CONDITIONS: Ip = 250A, Vos = Vag Rosion) Rosion) AND Vegirny NORMALIZED 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion; AND Vagitn) VS. TEMP. 40 120 160