Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSBF5CH60B Motion SPM(R) 3 Series Features General Description * UL Certified No. E209204 (UL1557) FSBF5CH60B is an advanced Motion SPM(R) 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. * 600 V - 5 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection * Low-Loss, Short-Circuit Rated IGBTs * Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout * Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing * Single-Grounded Power Supply * Isolation Rating: 2500 Vrms / min. Applications * Motion Control - Home Appliance / Industrial Motor Related Resources * AN-9044 - Motion SPM(R) 3 Series Users Guide Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBF5CH60B FSBF5CH60B SPMJA-027 Rail 10 (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 1 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series January 2014 FSBF5CH60B Motion SPM(R) 3 Series Integrated Power Functions * 600 V - 5 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions * For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 12 and 13. * For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) * Fault signaling: corresponding to UVLO (low-side supply) and SC faults * Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 2 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Selection Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input 8 CSC 9 IN(UH) Signal Input for High-Side U-Phase 10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) Signal Input for High-Side W-Phase 18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 3 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Internal Equivalent Circuit and Input/Output Pins P (27) (19) VB(W) VB (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (13) IN(VH) (16) VS(V) (11) VB(U) VS W (26) VCC COM IN OUT VS V (25) VB (10) VCC(H) (9) IN(UH) (12) VS(U) (8) CSC VCC COM IN OUT VS U (24) C(SC) OUT(WL) (7) CFOD C(FOD) (6) VFO NW (23) VFO (5) IN(WL) (3) IN(UL) OUT VB (14) VCC(H) (4) IN(VL) VCC COM IN IN(WL) OUT(VL) IN(VL) NV (22) IN(UL) (2) COM COM (1) VCC(L) VCC OUT(UL) VSL NU (21) Figure 3. Internal Block Diagram 1st Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 4 www.fairchildsemi.com unless otherwise specified.) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P - NU, NV, NW Supply Voltage (Surge) Applied between P - NU, NV, NW Rating Unit 450 V Collector - Emitter Voltage 500 V 600 V IC Each IGBT Collector Current TC = 25C, TJ 150C 5 A ICP Each IGBT Collector Current (Peak) TC = 25C, TJ 150C, Under 1 ms Pulse Width 10 A PC Collector Dissipation TC = 25C per Chip 19 W TJ Operating Junction Temperature (2nd Note 1) - 40 ~ 150 C Rating Unit 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM(R) 3 product is 150C (at TC 125C). Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC + 0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin VSC Current-Sensing Input Voltage Applied between CSC - COM 5 mA -0.3 ~ VCC + 0.3 V Rating Unit 600 V Bootstrap Diode Part Symbol VRRM Parameter Conditions Maximum Repetitive Reverse Voltage IF Forward Current TC = 25C, TJ 150C IFP Forward Current (Peak) TC = 25C, TJ 150C Width TJ Operating Junction Temperature 0.5 A 2.0 A -40 ~ 150 C Rating Unit 400 V -40 ~ 125 C Under 1 ms Pulse Total System Symbol Parameter Conditions VPN(PROT) Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V TJ = 150C, Non-Repetitive, < 2 s TC Module Case Operation Temperature -40CTJ 150C, See Figure 2 TSTG Storage Temperature VISO Isolation Voltage -40 ~ 125 C 2500 Vrms Typ. Max. Unit 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate Thermal Resistance Symbol Rth(j-c)Q Parameter Junction to Case Thermal Resistance Rth(j-c)F Conditions Min. Inverter IGBT Part (per 1 / 6 module) - - 6.3 C / W Inverter FWDi Part (per 1 / 6 module) - - 6.5 C / W 2nd Notes: 2. For the measurement point of case temperature (TC), please refer to Figure 2. (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 5 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Absolute Maximum Ratings (TJ = 25C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 5 A, TJ = 25C - - 2.0 V FWDi Forward Voltage VIN = 0 V IF = 5 A, TJ = 25C - - 2.1 V Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 5 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) - 0.75 - s - 0.15 - s - 0.60 - s - 0.20 - s tC(ON) tOFF tC(OFF) - 0.10 - s - 0.45 - s - 0.20 - s - 0.60 - s tC(OFF) - 0.20 - s trr - 0.10 - s - - 1 mA trr LS VPN = 300 V, VCC = VBS = 15 V IC = 5 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) tON tC(ON) tOFF Collector - Emitter Leakage VCE = VCES Current ICES 2nd Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol IQCCL Parameter Quiescent VCC Supply Current IQCCH Conditions Min. Typ. Max. Unit VCC = 15 V IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA VCC = 15 V IN(UH, VH, WH) = 0 V VCC(H) - COM - - 600 A VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 500 A IQBS Quiescent VBS Supply Current VBS = 15 V IN(UH, VH, WH) = 0 V VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V 0.45 0.50 0.55 V VFOL Short-Circuit Current Trip Level VCC = 15 V (2nd Note 4) Over-Temperature Protection Temperature at LVIC - 160 - C TSD Over-Temperature Protection Hysterisis Temperature at LVIC - 5 - C UVCCD Supply Circuit Under-Voltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.4 V VSC(ref) TSD UVCCR UVBSD Detection Level UVBSR Reset Level 10 11 12 V 10.5 11.5 12.5 V tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage 2.8 - - V VIN(OFF) OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM - - 0.8 V 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F] (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 6 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) FSBF5CH60B Motion SPM(R) 3 Series 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT SWITCHING LOSS(ON) VS. COLLECTOR CURRENT 200 270 240 210 VCE=300V VCC=15V VIN=5V TJ=25 TJ=150 SWITCHING LOSS, ESW(OFF) [uJ] SWITCHING LOSS, ESW(ON) [uJ] 300 180 150 120 90 60 30 0 0.0 180 160 140 VCE=300V VCC=15V VIN=5V TJ=25 TJ=150 120 100 80 60 40 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.0 5.5 COLLECTOR CURRENT, Ic [AMPERES] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics (Typical) (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 7 www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25C - 2.5 - V trr Reverse-Recovery Time IF = 0.1 A, TC = 25C - 80 - ns Built-in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 o TC=25 C 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Figure 6. Built-in Bootstrap Diode Characteristics 2nd Notes: 6. Built-in bootstrap diode includes around 15 resistance characteristic. Recommended Operating Conditions Symbol Parameter Conditions VPN Supply Voltage Applied between P - NU, NV, NW VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) dVCC / dt, Control Supply Variation dVBS / dt Min. Typ. Max. Unit - 300 400 V 13.5 15.0 16.5 V 13.0 15.0 18.5 V -1 - 1 V / s 2 - - s - 20 kHz 4 V tdead Blanking Time for Preventing Each Input Signal Arm-Short fPWM PWM Input Signal -40C TC 125C, -40C TJ 150C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -4 (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 8 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Bootstrap Diode Part Parameter Mounting Torque Conditions Mounting Screw: M3 Device Flatness Min. Typ. Max. Unit 0.51 0.62 1.00 N*m 0 - +120 m - 15.40 - g Recommended 0.62 N*m See Figure 7 Weight (+) (+) Figure 7. Flatness Measurement Position (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 9 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series Mechanical Characteristics and Ratings FSBF5CH60B Motion SPM(R) 3 Series Time Charts of Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 8. Under-Voltage Protection (Low-Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under-voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-voltage reset (UVBSR). b6 : Normal operation: IGBT ON and carrying current. Figure 9. Under-Voltage Protection (High-Side) (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 10 www.fairchildsemi.com c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage FSBF5CH60B Motion SPM(R) 3 Series Lower Arms Control Input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short-circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "LOW": IGBT OFF state. c7 : Input "HIGH": IGBT ON state, but during the active period of fault output, the IGBT doesn't turn ON. c8 : IGBT OFF state. Figure 10. Short-Circuit Protection (Low-Side Operation Only) (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 11 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series +5 V SPM RPF = 4.7 100 IN(UH) , IN(VH) , IN(WH) 100 MCU IN (UL) , IN (VL) , IN(WL) 100 1 nF VFO CPF = 1 nF 1 nF 1 nF COM Figure 11. Recommended MCU I/O Interface Circuit 3rd Notes: 1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application's printed circuit board. The input signal section of the Motion SPM(R) 3 product integrates a 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input works with standard CMOS or LSTTL outputs. These values depend on PWM control algorithm. One-Leg Diagram of Motion SPM 3 Product P 0.1 F 15 V 22 F Vcc VB IN HO COM VS Inverter Output Vcc 1000 F 1 F IN OUT COM VSL N Figure 12. Recommended Bootstrap Operation Circuit and Parameters 3rd Notes: 3. The ceramic capacitor placed between VCC - COM should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 12 www.fairchildsemi.com (19) V B(W ) (18) V CC(H) RS C BS Gating WH C BSC (17) IN(WH) (20) V S(W ) C PS (15) V B(V) (14) V CC(H) RS C BS Gating VH C BSC (16) V S(V) C PS M C U (13) IN (VH) (11) V B(U) (10) V CC(H) RS C BS Gating UH C BSC (9) IN (UH) (12) V S(U) C PS P (27) VB VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) M VB VCC C DCS OUT COM IN VS Vdc U (24) RF R PF (8) CSC C SC (7) C FOD RS C FOD Fault (6) V FO RS (5) IN(WL) RS (4) IN (VL) RS (3) IN(UL) Gating WL Gating VL C(SC) OUT(WL) C(FOD) N W (23) R SW VFO IN(WL) OUT(VL) IN(VL) NV (22) R SV IN(UL) Gating UL (2) COM C BPF C PS C PS C PS COM C PF (1) V CC(L) OUT(UL) VCC C SP15 VSL N U (21) R SU C SPC15 Input Signal for Short-Circuit Protection R FW W-Phase Current V-Phase Current U-Phase Current R FV R FU C FW CFV C FU Figure 13. Typical Application Circuit 4th Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm). 2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM(R) 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance (please refer to Figure11). 4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 , CPS = 1 nF). 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 s. 9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended. 11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 12. CSPC15 should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 13 www.fairchildsemi.com FSBF5CH60B Motion SPM(R) 3 Series +5 V +15 V FSBF5CH60B Motion SPM(R) 3 Series Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD27DA.pdf (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 14 www.fairchildsemi.com (c)2007 Fairchild Semiconductor Corporation FSBF5CH60B Rev. C3 15 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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