PD - 95335C IRF7413ZPbF HEXFET(R) Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS RDS(on) max ID 30V 10m @VGS = 10V 13A : 1 8 S 2 7 S 3 6 4 5 S G A A D D D D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage 20 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 13 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 10 IDM Pulsed Drain Current 100 PD @TA = 25C Power Dissipation PD @TA = 70C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range c A W 2.5 1.6 W/C C 0.02 -55 to + 150 Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient f Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 10 www.irf.com 1 06/29/06 IRF7413ZPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage 30 --- --- VDSS/T J Breakdown Voltage Temp. Coefficient --- 0.025 --- V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance --- 8.0 10 m --- 10.5 13 V GS(th) Gate Threshold Voltage 1.35 1.80 2.25 V V GS(th)/T J Gate Threshold Voltage Coefficient --- -5.0 --- mV/C IDSS Drain-to-Source Leakage Current --- --- 1.0 A V DS = 24V, VGS = 0V --- --- 150 IGSS Gate-to-Source Forward Leakage --- --- 100 nA V GS = 20V Gate-to-Source Reverse Leakage --- --- -100 gfs Forward Transconductance 62 --- --- Qg V Conditions BVDSS V GS = 0V, ID = 250A V GS = 4.5V, ID V DS = V GS, ID = 250A V DS = 24V, VGS = 0V, T J = 125C V GS = -20V S V DS = 15V, ID = 10A Total Gate Charge --- 9.5 14 Qgs1 Pre-Vth Gate-to-Source Charge --- 3.0 --- Qgs2 Post-Vth Gate-to-Source Charge --- 1.0 --- Qgd Gate-to-Drain Charge --- 3.0 --- ID = 10A Qgodr See Fig. 16 Gate Charge Overdrive --- 2.5 --- Qsw Switch Charge (Qgs2 + Qgd) --- 4.0 --- e = 10A e V GS = 10V, ID = 13A V DS = 15V nC Qoss Output Charge --- 5.6 --- nC RG Gate Resistance --- 2.3 4.5 td(on) Turn-On Delay Time --- 8.7 --- tr Rise Time --- 6.3 --- td(off) Turn-Off Delay Time --- 11 --- tf Fall Time --- 3.8 --- Ciss Input Capacitance --- 1210 --- Coss Output Capacitance --- 270 --- Crss Reverse Transfer Capacitance --- 140 --- V GS = 4.5V V DS = 15V, VGS = 0V V DD = 16V, VGS = 4.5V ID = 10A ns Clamped Inductive Load V GS = 0V pF V DS = 15V = 1.0MHz Avalanche Characteristics E AS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units --- 32 mJ --- 10 A Diode Characteristics Parameter IS Continuous Source Current Min. Typ. Max. Units --- --- 3.1 (Body Diode) Conditions MOSFET symbol A showing the ISM Pulsed Source Current --- --- 100 V SD (Body Diode) Diode Forward Voltage --- --- 1.0 V p-n junction diode. T J = 25C, IS = 10A, V GS = 0V trr Reverse Recovery Time --- 24 36 ns T J = 25C, IF = 10A, VDD = 15V Qrr Reverse Recovery Charge --- 16 24 nC di/dt = 100A/s ton Forward Turn-On Time 2 c integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7413ZPbF 1000 1000 100 BOTTOM VGS 10V 8.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 10 2.5V 1 100 BOTTOM 10 2.5V 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 1 0.1 0.1 1 0.1 10 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 100 T J = 150C 10 T J = 25C VDS = 10V 20s PULSE WIDTH 1 ID = 13A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current () 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1.0 0.5 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7413ZPbF 10000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS , Gate-to-Source Voltage (V) ID= 10A C, Capacitance(pF) C oss = C ds + C gd Ciss 1000 Coss Crss VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 100 0 VDS, Drain-to-Source Voltage (V) 12 16 1000 ID, Drain-to-Source Current (A) 1000.00 ISD, Reverse Drain Current (A) 8 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10.00 T J = 25C 1.00 10 100sec 1msec 1 T A = 25C 10msec Tj = 150C Single Pulse VGS = 0V 0.10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 4 Q G Total Gate Charge (nC) 1.4 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7413ZPbF 14 VGS(th) Gate threshold Voltage (V) 2.5 ID, Drain Current (A) 12 10 8 6 4 2 2.0 ID = 250A 1.5 1.0 0.5 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) T A , Ambient Temperature (C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 3 4 4 Ci= i/Ri Ci= i/Ri i (sec) 1.8556 0.000337 2.4927 0.012752 25.570 0.691000 20.340 21.90000 P DM SINGLE PULSE ( THERMAL RESPONSE ) 0.01 Ri (C/W) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak T J = P DM x Z thJA 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 +T A 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7413ZPbF DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 140 15V ID TOP 120 BOTTOM 3.1A 3.9A 10A 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current LD I AS VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1s Duty Factor < 0.1% 50K 12V .2F Fig 14a. Switching Time Test Circuit .3F D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS Current Sampling Resistors td(on) Fig 13. Gate Charge Test Circuit 6 tr td(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF7413ZPbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF7413ZPbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms x Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg x Vg x f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Q + oss x Vin x f + (Qrr x Vin x f ) 2 This can be expanded and approximated by; Ploss = (Irms 2 x Rds(on ) ) Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRF7413ZPbF SO-8 Package Details ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H $ ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 www.irf.com ;;;; ) '$7(&2'( <:: 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 9 IRF7413ZPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.62mH, RG = 25, IAS = 10A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/2006 10 www.irf.com SOIC-8L Lead Free and RoHS Compliance Document Contents: 1. Composition 2. Solder Reflow 3. TIn Whisker Report 4. RoHS Certification 5. Independent Laboratory Analysis http://www.irf.com/ehs/ SOIC-8L Component Chip Material Name Silicon Material Element Name Mass (gr/ea) Composition 0.00262 Encapsulant Epoxy Resin 0.05006 Lead Frame Copper 0.02426 Die Attach Silver Epoxy 0.00193 Wire bond Lead Finish Gold Tin / Lead 0.00030 0.00146 MSL2 at 260 C Si SiO2 Epoxy Other Cu Other Epoxy Ag Aromatic Amine Au Sn Total Weight (g) Substance Mass (per device) g 0.00262 0.03550 0.00888 0.00568 0.02363 0.00063 0.00017 0.00088 0.00088 0.00030 0.00146 Material Analysis Weight (%) 100% 71% 18% 11% 97% 3% 9% 46% 46% 100% 100% % of Total Weight 3.2% 44.0% 11.0% 7.0% 29.3% 0.8% 0.2% 1.1% 1.1% 0.4% 1.8% 0.08063 260 DEGREE REFLOW PROFILE 300 60 to 150 sec > 217 C DEGREE CELCIUS 250 200 150 10 to 30 sec > 255 C 60 to 180 sec 150 C to 200 C 100 50 0 TIME This part is compliant with EU Directive 2002/95/EC (RoHS) and does not contain lead, mercury, cadmium (0.01%), hexavalent chromium, PBB or PBDE in concentrations greater than 0.1%, except as permitted by Annex (7). Data for IR products and services contained in this document was derived under specific operating and environmental conditions. The actual results obtained by any other party implementing such products or services will depend on a large number of factors and may vary significantly. IR makes no representation that these results can be expected or obtained by any other party. The information contained in this document is provided without any warranty, either expressed or implied, and IR specifically disclaims any and all liability, including but not limited to consequential or indirect damages. IR reserves the right to make changes without further notice to any products and services contained herein. SOIC-8L Tin Whisker Report Objective: The purpose is to evaluate the Tin whisker growth for various test conditions on PbF products Part No: IRF7530 Package Type: Micro-8 Micro-8 used for SOIC-8L Room Temperature Storage Test Temperature Humidity Unbias Temperature Cycling -55 to 85oC Test Conditions Test Status/Readpoint Examples: Whisker Length (m) Abbreviation Whisker length pass/fail criterion o o 30+/-2 C, 60+/-3%RH 60+/-5 C, 87+3/-2%RH NWF NWF NWF 0 0 0 NWF WFA WFO No Whiskers Found Whisker length less than 10 um is considered insignificant Whiskers found within acceptable range Whisker length less than 40 um is considered pass Whiskers found over acceptable range Whisker length exceeding 40 um is considered fail Sn Plating descriptions: Plating thickness (in): >300 o Annealing conditions: 150 C for 1 hour Plating finish: 100% Sn Matte Sample size: 3 pieces per test o Reflow: 1X @ 255 C Data for IR products and services contained in this document was derived under specific operating and environmental conditions. The actual results obtained by any other party implementing such products or services will depend on a large number of factors and may vary significantly. IR makes no representation that these results can be expected or obtained by any other party. The information contained in this document is provided without any warranty, either expressed or implied, and IR specifically disclaims any and all liability, including but not limited to consequential or indirect damages. IR reserves the right to make changes without further notice to any products and services contained herein. International Rectifier components and their homogeneous sub-components manufactured under the Lead Free Program (1) are in compliance with European Union Directive 2002/95/EC (RoHS Directive) of the European Parliament and of the Council of 27 January 2003. IR parts that have been identified as RoHS compliant do not exceed the maximum limit for following 6 designated substances. Substance Cadmium (Cd) Lead (Pb) Mercury (Hg) Hexavalent Chromium (Cr6+) Poly Brominated Biphenyls (PBB) Poly Brominated Diphenyl Ethers (PBDE) (1) (2) Maximum Limit (ppm) 100 1000 (2) 1000 1000 1000 1000 Part numbers typically contain a "PBF" suffix Maximum limit (ppm) does not apply to applications for which exemptions have been granted by the RoHS Directive Our statements in this letter regarding RoHS compliance and lead content do not extend to, or apply to any product subjected to unintended contamination, misuse, neglect, accident, improper installation, or to use in violation of instructions furnished by IR. We additionally note that IR products in certain specific large outline packages could contain high temperature solder die attach material having greater than 85% lead content, which is considered exempt from ELV Directive, Article 4(2)(a) by Annex II and RoHS Directive, Article 4(1) by Annex (7). Authorized signatures for International Rectifier: Name: Greg Takagi Date: Position: Director, Global Environmental Health and Safety Name: Danny Narabal Date: Position: Director, Package Engineering The information contained in this letter is being provided for informational purposes only and to clarify certain information concerning IR products. Nothing provided in this letter is (i) a representation, warranty or agreement to indemnification by IR, (ii) a statement which may form the basis of reliance by IR, (iii) a modification of any of the terms and conditions of sale agreed to in writing between IR and its customers with respect to any IR products, whether previously sold or to be sold in the future. Report Date: 14-Jul-2005 Work Order: 05-03284-01 ELEMENTAL CONTAMINATION TEST RESULTS Testing performed by: Air Liquide - Balazs Analytical Services 46409 Landing Parkway, Fremont CA 94538 Telephone (510) 657-0600 Fax (510) 657-2292 Web http://www.balazs.com Analysis Technique: Analysis was performed on twelve (12) IC samples to determine the amount of elemental contamination (Cd, Pb, Hg, and As), PVC and PVC blends, asbestos, hexavalent chromium, and organic bromide compounds present in the samples. Analysis Technique: Each sample set was ground to pass a 200 mesh screen. Individual samples were analyzed in accordance with the document labeled "Plastics - Determination of cadmium - Wet decomposition method", EN1122, ICS 83.080.01, Method "A". Individual were weighed to +0.01 mg. followed by analysis using ISO 3613: 2000(E), "Chromate Conversion Coatings on Zinc, Cadmium, Aluminum-Zinc Alloys and Zinc-Aluminum alloys---Test Methods." Each sample set was ground to pass a 200 mesh screen. Individual samples were analyzed in accordance with the document labeled "Interim Method for the Determination of Asbestos in Bulk Insulation Samples", EPA-600/M4-82-020, Dec. 1982. Samples were measured utilizing a Leica DMLM compound binocular microscope. Each sample set was prepared for reflectance mode FTIR utilizing a BioRad FTS6000 FTIR system coupled to a UMA 500 FTIR microscope. The FTIR spectra for reference areas were collected on adjacent clear areas of a control wafer. Infrared spectra were then collected at 8 cm1 resolution with 1024 scans co-added together prior to Fourier Transformation. Individual samples were analyzed in accordance with EPA-600 Method 1614 draft method, in conjunction with the appropriate preparation technique. Elemental Results: Sample Name Blank IRF4905PBF (TO-220) IRFP450PBF (TO-247) IRF740SPBF (D2-PAK) IRFR3707ZPBF (D-PAK) IRLL2705PBF (SOT-223) IRF6603 (DirectFET) IRLML6401TRPBF (Micro-3) IRLMS6802TRPBF (Micro-6) IRF7821PBF(SO-8) IR2153PBF (8L PDIP) IRF7503TRPBF (Micro-8) IR3086AMPBF (20L MLPQ) As ppm (wt.) <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 Cd ppm (wt.) <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 Hg ppm (wt.) <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 Pb ppm (wt.) <1.0 4.1 11.6 14600 4864 11100 19.2 6.4 9.5 7.6 9.4 15.8 8.9 The re-analysis of the IRF740SPBF, IRFR3707ZPBF, IRLL2705PBF indicate that the high Pb is coming from a single internal layer and is exempt per the specifications Results: Sample Name Blank IRF4905PBF (TO-220) IRFP450PBF (TO-247) IRF740SPBF (D2-PAK) IRFR3707ZPBF (D-PAK) IRLL2705PBF (SOT-223) IRF6603 (DirectFET) IRLML6401TRPBF (Micro-3) IRLMS6802TRPBF (Micro-6) IRF7821PBF(SO-8) IR2153PBF (8L PDIP) IRF7503TRPBF (Micro-8) IR3086AMPBF (20L MLPQ) PBB/PDBE ppm (wt.) <10. <10. <10. <10. <10. <10. <10. <10. <10. <10. <10. <10. <10. Cr(VI) ppm (wt.) <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 PVC ppm (wt.) <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 <1.0 Asbestos P/NP NP NP NP NP NP NP NP NP NP NP NP NP NP