4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
September 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
■
High voltage:
– MOC8204M, BV
CER
= 400V
– H11D1M, H11D2M, BV
CER
= 300V
– H11D3M, BV
CER
= 200V
■
High isolation voltage:
– 7500 V
AC
peak, 1 second
■
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■
IEC 60747-5-2 approved (ordering option V)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
General Description
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
Schematic Package Outlines
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6BASE
N/C
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 2
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Parameter Device Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature (Wave Solder) All 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All 260 mW
3.5 mW/°C
EMITTER
I
F
Forward DC Current
(1)
All 80 mA
V
R
Reverse Input Voltage
(1)
All 6.0 V
I
F
(pk) Forward Current – Peak (1µs pulse, 300pps)
(1)
All 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C
(1)
Derate Above 25°C
All 150 mW
1.41 mW/°C
DETECTOR
P
D
Power Dissipation @ T
A
= 25°C All 300 mW
Derate linearly above 25°C 4.0 mW/°C
V
CER
Collector to Emitter Voltage
(1)
MOC8204M 400 V
H11D1M, H11D2M 300
H11D3M 200
4N38M 80
V
CBO
Collector Base Voltage
(1)
MOC8204M 400 V
H11D1M, H11D2M 300
H11D3M 200
4N38M 80
V
ECO
Emitter to Collector Voltage
(1)
H11D1M, H11D2M,
H11D3M,
MOC8204M
7V
I
C
Collector Current (Continuous) All 100 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 3
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
*All Typical values at T
A
= 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage
(2)
I
F
= 10mA All 1.15 1.5 V
∆
V
F
∆
T
A
Forward Voltage
Temp. Coefficient
All -1.8 mV/°C
BV
R
Reverse Breakdown
Voltage
I
R
= 10µA All 6 25 V
C
J
Junction Capacitance V
F
= 0V, f = 1MHz All 50 pF
V
F
= 1V, f = 1MHz 65 pF
I
R
Reverse Leakage
Current
(2)
V
R
= 6V All 0.05 10 µA
DETECTOR
BV
CER
Breakdown Voltage
Collector to Emitter
(2)
R
BE
= 1M
Ω
, I
C
= 1.0mA, I
F
= 0 MOC8204M 400 V
H11D1M/2M 300
H11D3M 200
BV
CEO
No RBE, I
C
= 1.0mA 4N38M 80
BV
CBO
Collector to Base
(2)
I
C
= 100µA, I
F
= 0 MOC8204M 400 V
H11D1M/2M 300
H11D3M 200
4N38M 80
BV
EBO
Emitter to Base I
E
= 100µA, I
F
= 0 4N38M 7 V
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10 V
I
CER
Leakage Current
Collector to Emitter
(2)
(R
BE
= 1M
Ω
)
V
CE
= 300V, I
F
= 0, T
A
= 25°C MOC8204M 100 nA
V
CE
= 300V, I
F
= 0, T
A
= 100°C 250 µA
V
CE
= 200V, I
F
= 0, T
A
= 25°C H11D1M/2M 100 nA
V
CE
= 200V, I
F
= 0, T
A
= 100°C 250 µA
V
CE
= 100V, I
F
= 0, T
A
= 25°C H11D3M 100 nA
V
CE
= 100V, I
F
= 0, T
A
= 100°C 250 µA
I
CEO
No R
BE
, V
CE
= 60V, I
F
= 0,
T
A
= 25°C
4N38M 50 nA
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
EMITTER
CTR Current Transfer
Ratio, Collector to
Emitter
I
F
= 10mA, V
CE
= 10V,
R
BE
= 1M
Ω
H11D1M/2M/3M,
MOC8204M
2 (20) mA (%)
I
F
= 10mA, V
CE
= 10V 4N38M 2 (20)
V
CE(SAT)
Saturation Voltage
(2)
I
F
= 10mA, I
C
= 0.5mA,
R
BE
= 1M
Ω
H11D1M/2M/3M,
MOC8204M
0.1 0.40 V
I
F
= 20mA, I
C
= 4mA 4N38M 1.0
SWITCHING TIMES
t
ON
Non-Saturated
Turn-on Time
VCE = 10V, ICE = 2mA,
RL = 100Ω
All 5 µs
tOFF Turn-off Time All 5 µs
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 4
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
DC Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified.)
Isolation Characteristics
*All Typical values at TA = 25°C
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
VISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 VACPEAK
RISO Isolation Resistance VI-O = 500 VDC All 1011 Ω
CISO Isolation Capacitance f = 1MHz All 0.2 pF
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
VPR Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 Vpeak
VIORM Max. Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over Voltage 6000 Vpeak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, VIO = 500V 109 Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 5
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Typical Performance Curves
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CER
– DARK CURRENT
Fig. 3 Normalized Output Current vs. LED Input Current
IF – LED INPUT CURRENT (mA)
110
NORMALIZED I
CER
– OUTPUT CURRENT
0.01
0.1
1
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CER
– OUTPUT CURRENT
Fig. 4 Normalized Output Current vs. Temperature
-60 -40 -20 0 20 40 60 80 100
0.1
1
Normalized to:
VCE = 10V
IF = 10mA
RBE = 106 Ω
TA = 25˚C
IF = 10mA
IF = 5mA
IF = 20mA
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CBO
– COLLECTOR-BASE CURRENT
Fig. 6 Normalized Collector-Base Current vs. Temperature
-60 -40 -20 0 20 40 60 80 100
0
1
2
3
4
5
6
7
8
9
10
Normalized to:
VCE = 10V
IF = 10mA
RBE = 106 Ω
TA = 25˚C
IF = 50mA
IF = 10mA
IF = 5mA
Fig. 5 Normalized Dark Current vs. Ambient Temperature
10 20 30 40 50 60 70 80 90 100 110
0.1
1
10
100
1000
10000
VCE = 300V
VCE = 100V
VCE = 50V
Normalized to:
VCE = 100V
RBE = 106 Ω
TA = 25˚C
VCE – COLLECTOR VOLTAGE (V)
NORMALIZED I
CER
– OUTPUT CURRENT
Fig. 2 Normalized Output Characteristics
0.1 1 10 100
0.01
0.1
1
10
Normalized to:
VCE = 10V
IF = 10mA
RBE = 106 Ω
TA = 25˚C
IF = 50mA
IF = 5mA
IF = 10mA
IF – LED FORWARDCURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = -55˚C
TA = 25˚C
TA = 100˚C
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 6
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 7
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option H11D1M Standard Through Hole Device (50 units per tube)
S H11D1SM Surface Mount Lead Bend
SR2 H11D1SR2M Surface Mount; Tape and Reel
T H11D1TM 0.4" Lead Spacing
V H11D1VM VDE 0884
TV H11D1TVM VDE 0884, 0.4" Lead Spacing
SV H11D1SVM VDE 0884, Surface Mount
SR2V H11D1SR2VM VDE 0884, Surface Mount, Tape and Reel
H11D1
V X YY Q
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 8
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
ThePower Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
First Production
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers