FEATURES
DTrenchFETr Power MOSFET
Si4410DY
Vishay Siliconix
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) () ID (A)
30
0.0135 @ VGS = 10 V 10
30 0.020 @ VGS = 4.5 V 8
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
10
Continuous Drain Current (TJ = 150_C)a
TA = 70_CID8
A
Pulsed Drain Current IDM 50 A
Continuous Source Current (Diode Conduction)aIS2.3
Maximum Power Dissipationa
TA = 25_C
PD
2.5
W
Maximum Power Dissipationa
TA = 70_CPD1.6 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-AmbientaRthJA 50
_C/W
Maximum Junction-to-Foot (Drain) RthJF 22
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Si4410DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71726
S-40838—Rev. L, 03-May-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V 1
A
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 25 A
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V 20 A
Drain Source On State Resistancea
rDS( )
VGS = 10 V, ID =10 A 0.011 0.0135
Drain-Source On-State ResistancearDS(on) VGS = 4.5 V, ID = 5 A 0.015 0.020
Forward Transconductanceagfs VDS = 15 V, ID = 10 A 38 S
Diode Forward VoltageaVSD IS = 2.3 A, VGS = 0 V 0.7 1.1 V
Dynamicb
Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 10 A 20 34
Total Gate Charge Qgt
37 60
nC
Gate-Source Charge Qgs
VDS = 15 V, VGS = 10 V, ID = 10 A 7
n
C
Gate-Drain Charge Qgd VDS = 15 V, VGS = 10 V, ID = 10 A 7.0
Gate Resistance Rg0.5 1.5 2.6
Turn-On Delay Time td(on) 19 30
Rise Time trVDD = 25 V, RL = 25 9 20
Turn-Off Delay Time td(off)
,
ID ^ 1 A, VGEN = 10 V, RG = 6 70 100 ns
Fall Time tf20 80
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/s 40 80
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing. Values shown are for product revision A.
Si4410DY
Vishay Siliconix
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
0 6 12 18 24 30
0
10
20
30
40
50
0246810
0
2
4
6
8
10
0 8 16 24 32 40
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 1020304050
0
10
20
30
40
50
012345
Output Characteristics Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 10 V thru 4 V
3 V
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC = 125_C25_C
-55_C
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 15 V
ID = 10 A
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 10 A
TJ - Junction Temperature (_C)
VGS = 4.5 V
VGS = 10 V
rDS(on) - On-Resistance (
rDS(on) - On-Resistance (
(Normalized)
Si4410DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71726
S-40838—Rev. L, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.00
0.02
0.04
0.06
0.08
0.10
0246810
0
20
40
60
80
0.01 0.10 1.00 10.00
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 110
Normalized Effective Transient
Thermal Impedance
30
- On-Resistance (rDS(on) )
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (_C) Time (sec)
Power (W)
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
0.6
-50 -25 0 25 50 75 100 125 150
ID = 10 A
ID = 250 A
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 50_C/W
3. TJM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
- Source Current (A)
IS
40
TJ = 25_C
TJ = 150_C