BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symbol Rating Unit Collector-Emitter Voltage Voces : BC307 -50 Vv : BC308/309 -30 Vv Collector-Emitter Voltage VecEo : BC307 -45 Vv : BC308/309 -25 Vv Emitter-Base Voltage VeBo 5 Vv Collector Current (DC) le -100 mA Collector Dissipation Po 500 mw Junction Temperature Ty 150 C Storage Temperature Tsta -55 ~ 150 C ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Emitter Breakdown Voltage BV ceo lc= -2mA, lp=0 : BC307 -45 Vv : BC308/309 -25 Vv Collector Emitter Breakdown Voltage BVces lo= -10p/A, Ip=0 : BC307 -50 v : BC308/309 -30 v Emitter Base Breakdown Voltage BVeso le= -10pA, Ip=0 -5 Vv Collector Cut-off Current Ices : BC307 Vee= -45V, Ip=0 2 -15 | nA : BC238/239 Voe= -25V, Ip=0 -2 15 | nA DC Current Gain Hee Voe= -5V, lo= -2mA 120 800 Collector-Emitter Saturation Voltage Vcr (sat) lo= -10MA, Ip= -0.5mMA -0.3 Vv Io= -1 aamA, Ip= -5mA -0.5 Vv Collector Base Saturation Voltage Voe (sat) lo= -10mMA, la= -0.5mA -0.7 Vv Io= -1 aamA, Ip= -5mA -0.85 Vv Base Emitter On Voltage Vee (on) Voe= -5V, lo= -2mA -0.55 -0.62 -0.7 Vv Current Gain Bandwidth Product fr Voe= SV, Io= -10mA 130 MHz Collector Base Capacitance Ccoso Vep= -10V, f-1MHz 6 pF Emitter Base Capacitance CeEBo Vep= -0.5V, f=1MHz 12 pF Noise Figure : BC237/238 | NF Voe= -5V, lo= -0.2mA, 10 dB : BC239 Re=2KQ, f=1KHz 4 aB : BC239 NF Vce= -5V, lo= -0.2mA 2 4 dB Rg=2KQ, f=30~15KHz hre CLASSIFICATION Classification A B c hee 120-220 180-460 380-800 errr Rev. B FAIRCHILD le pr SEMICONDUCTOR mw 1999 Fairchild Semiconductor CorporationBC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE -100 -50 -30 ic(mA), COLLECTOR CURRENT ig(mA), COLLECTOR CURRENT I @ 0 -2 -4 -6 -8 ~10 -12 -14 ~16 -18 -20 Q 02 -04 -06 -08 -10 -1.2 Vce(V), COLLECTOR-EMITTER VOLTAGE Vec(V), BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT 1000 1000 500 500 300 300 100 50 30 100 50 hee, DC CURRENT GAIN 30 fr(MH2), CURRENT GAIN-BANDWIDTH PRODUCT 1 10 -0.1 -0.3-0.5 -1 -3~5 -10 30-50 -100 -0.5 -1 -3 -5 -10 30 Ip(mA), COLLECTOR CURRENT icfmA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE -10 3 -10lg = -s 3 5 -3 z Q < -1 ua 5 g 2 $ - GQ -05 5 = -03 a 3 3 3 < > a 701 g a d z 2 -0.05 -0.03 -0.04 -O1 -03-0.5 -1 -3-5 -10 30 -50 -100 ~1 -3 -5 -10 -30 -S0 -100 -300 ((mA), COLLECTOR CURRENT Veg(V), COLLECTOR-BASE VOLTAGE ee FAIRCHILD | SEMICONDUCTOR mwTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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