To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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HA17358A Series Dual Operational Amplifier ADE-204-033B (Z) Rev.2 May 2001 Description HA17358A series are dual operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely applied to control equipments and to general use. Features * Wide range of supply voltage, and single power supply used * Wide range of common mode voltage, and possible to operate with an input about 0 V, and output around 0 V is available * Frequency characteristics and input bias current are temperature compensated * Low electro-magnetic susceptibility level Measurement Condition 5.0 Output Offset Voltage vs. Input Interference Rs Rs - + Rf 0.01 Vin -10 dBm RF signal source (for quasi-RF noise) Vout V _ (= 100Vio) Output offset voltage (arb. unit) Rf Vcc = +7.5 V Vee = -7.5 V 4.0 HA17358 series 3.0 2.0 Improvement 1.0 HA17358A series 0 -1.0 100E+3 1E+6 10E+6 100E+6 1E+9 Input RF frequency (Hz) 10E+9 HA17358A Series Ordering Information Type No. Application Package HA17358A Commercial use DP-8B HA17358AF FP-8D HA17358ARP FP-8DC Pin Arrangement Vout1 Vin(-)1 1 2 Vin(+)1 3 GND 4 1 - + 2 + - 8 VCC 7 Vout2 6 Vin(-)2 5 Vin(+)2 (Top View) Circuit Schematic (1/2) Q5 Vin(-) Q1 Q2 Q3 Q4 Q6 Q7 C R1 Vin(+) Vout Q11 Q10 Q8 Rev.2, May 2001, page 2 of 2 Q9 Q13 Q12 HA17358A Series Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol HA17358A HA17358AF/ARP Unit Supply voltage VCC 32 32 V Sink current Isink 50 50 1 mA 2 Power dissipation PT 570 * 385 * mW Common mode input voltage VCM -0.3 to VCC -0.3 to VCC V Differential input voltage Vin (diff) VCC VCC V Operating temperature Topr -40 to +85 -40 to +85 C Storage temperature Tstg -55 to +125 -55 to +125 C Notes: 1. This is the allowable values up to Ta = 50C. Derate by 8.3 mW/C. 2. These are the allowable values up to Ta = 25C mounting in air. When it is mounted on glass epoxy board of 40 mm x 40 mm x 1.5 mmt with 30% wiring density, the allowable value is 570 mW up to Ta = 45C. If Ta > 45C, derate by 7.14 mW/C. Rev.2, May 2001, page 3 of 3 HA17358A Series Electrical Characteristics (VCC = +15 V, Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Input offset voltage VIO -- 3 7 mV VCM = 7.5V, RS = 50, Rf = 50k Input offset current IIO -- 5 50 nA VCM = 7.5V, IIO = | II (+) - II (-) | Input bias current IIB -- 30 250 nA VCM = 7.5V Power source rejection ratio PSRR -- 93 -- dB RS = 1k, Rf = 100k Voltage gain AVD 75 90 -- dB RL = , RS = 1k, Rf = 100k Common mode rejection ratio CMR -- 80 -- dB RS = 50, Rf = 5k Common mode input voltage range VCM (+) 13.5 -- -- V RS = 1k, Rf = 100k VCM (-) -- -- -0.3 V RS = 1k*, Rf = 100k Peak-to-peak output voltage Vop-p -- 13.6 -- V f = 100Hz, RL = 20k, RS = 1k, Rf = 100k Output source current Iosource 20 40 -- mA VIN = 1V, VIN = 0V, VOH = 10V Output sink current Iosink 10 20 -- mA VIN = 1V, VIN = 0V, VOL = 2.5V Output sink current Iosink 15 50 -- A VIN = 1V, VIN = 0V, Vout = 200mV + - - + - + Supply current ICC -- 0.8 2 mA VIN = GND, RL = Slew rate SR -- 0.2 -- V/s RL = , VCM = 7.5V, f = 1.5kHz Channel separation CS -- 120 -- dB f = 1kHz Rev.2, May 2001, page 4 of 4 HA17358A Series Output Source Current vs. Ambient Temperature 80 VCC = 15 V 70 VOH = 10 V 60 50 40 30 20 10 0 -20 0 20 40 60 Ambeint temperature Ta (C) Input Bias Current vs. Ambient Temperature 80 Input bias current IIB (nA) Output source current Iosource (mA) Characteristic Curves VCC = 15 V VCM = 7.5 V 70 60 50 40 30 20 10 0 -20 80 2 1 8 16 24 32 Supply voltage VCC (V) 80 Input bias current IIB (nA) Supply current ICC (mA) Ta = 25C 3 0 40 20 0 40 Ta = 25C RL = 120 80 40 40 Maximum output voltage VOP-P (V) Voltage gain AVD (dB) 8 16 24 32 Supply voltage VCC (V) 40 Maxlmum Output Voltage vs. Frequency 160 8 16 24 32 Supply voltage VCC (V) Ta = 25C 60 Voltage Gain vs. Supply Voltage 0 80 Input Bias Current vs. Supply Voltage Supply Current vs. Supply Voltage 4 0 20 40 60 Ambeint temperature Ta (C) 20 VCC = 15 V Ta = 25C RL = 20 k 16 12 8 4 0 1k 3k 10 k 30 k 100 k 300 k Frequency f (Hz) 1M Rev.2, May 2001, page 5 of 5 HA17358A Series Voltage Gain vs. Frequency 120 VCC = 15V Ta = 25C RL = Voltage gain AVD (dB) 100 80 60 40 20 0 1 3 10 30 100 300 1k 3k Frequency f (Hz) 10 k 30 k 100 k 300 k Common Mode Rejection Ratio vs. Frequency Common mode rejection ratio CMR (dB) 120 VCC = 15V Ta = 25C RS = 50 100 80 60 40 20 0 100 Rev.2, May 2001, page 6 of 6 300 1k 3 k 10 k 30 k 100 k 300 k Frequency f (Hz) 1M 1M HA17358A Series Solder Mounting Method 1. Small and light surface-mount packages require spicial attentions on solder mounting. On solder mounting, pre-heating before soldering is needed. The following figure show an example of infrared rays refow. Temperature 2. The difference of thermal expansion coefficeient between mounted substrates and IC leads may cause a failure like solder peeling or soler wet, and electrical characteristics may change by thermal stress. Therefore, mounting should be done after sufficient confirmation for especially in case of ceramic substrates. 235C Max 10 s Max 140 to 160C 60 s 1 to 4C/s 1 to 5C/s Time (s) Figure 1 An Example of Infrared Rays Reflow Conditions Rev.2, May 2001, page 7 of 7 HA17358A Series Package Dimensions Unit: mm 6.3 7.4 Max 9.6 10.6 Max 8 5 1 0.89 4 1.3 7.62 0.5 Min 2.54 Min 5.06 Max 1.27 Max + 0.10 0.25 - 0.05 0.48 0.10 2.54 0.25 0 - 15 Hitachi Code JEDEC EIAJ Mass (reference value) DP-8B Conforms Conforms 0.51 g Unit: mm 4.85 4.4 5.25 Max 5 8 1 0.75 Max *0.22 0.05 0.20 0.04 2.03 Max 4 0.25 6.50 +- 0.15 1.05 1.27 *0.42 0.08 0.40 0.06 0.10 0.10 0 - 8 0.25 0.60 +- 0.18 0.15 0.12 M *Dimension including the plating thickness Base material dimension Rev.2, May 2001, page 8 of 8 Hitachi Code JEDEC EIAJ Mass (reference value) FP-8D -- Conforms 0.10 g HA17358A Series Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 0.03 0.20 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 - 0.30 1.08 *0.42 0.08 0.40 0.06 + 0.11 0.14 0.04 0 - 8 1.27 + 0.67 0.60 - 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DC Conforms -- 0.085 g Rev.2, May 2001, page 9 of 9 HA17358A Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.2, May 2001, page 10 of 10