HA17358A - Renesas Technology / Hitachi Semiconductor

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Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

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Renesas Technology Corp.

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April 1, 2003

To all our customers

Cautions

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HA17358A Series

Dual Operational Amplifier

ADE-204-033B (Z)

Rev.2

May 2001

Description

HA17358A series are dual operational amplifier that provide high gain and internal phase compensation,

with single power supply. They can be widely applied to control equipments and to general use.

Features

• Wide range of supply voltage, and single power supply used

• Wide range of common mode voltage, and possible to operate with an input about 0 V, and output

around 0 V is available

• Frequency characteristics and input bias current are temperature compensated

• Low electro-magnetic susceptibility level

Output Offset Voltage vs. Input InterferenceMeasurement Condition

Output offset voltage (arb. unit)

5.0

4.0

3.0

2.0

1.0

−1.0

100E+3 1E+6 10E+6 100E+6 1E+9 10E+9

Input RF frequency (Hz)

HA17358A series

HA17358 series

Rs −

0.01 µ

Vin

−10 dBm

RF signal source

(for quasi-RF noise)

Vcc = +7.5 V

Vee = −7.5 V

Vout

(= 100∗Vio)

Improve-

ment

HA17358A Series

Rev.2, May 2001, page 2 of 2

Ordering Information

Type No. Application Package

HA17358A Commercial use DP-8B

HA17358AF FP-8D

HA17358ARP FP-8DC

Pin Arrangement

−+

Vout1

Vin(−)1

Vin(+)1

GND

Vout2

Vin(−)2

Vin(+)2

+−

(Top View)

Circuit Schematic (1/2)

Vout

Vin(+)

Vin(−)C

HA17358A Series

Rev.2, May 2001, page 3 of 3

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Symbol HA17358A HA17358AF/ARP

Unit

Supply voltage VCC 32 32 V

Sink current Isink 50 50 mA

Power dissipation PT 570 *1 385 *2 mW

Common mode input voltage VCM −0.3 to VCC −0.3 to VCC V

Differential input voltage Vin (diff) ±VCC ±VCC V

Operating temperature Topr −40 to +85 −40 to +85 °C

Storage temperature Tstg −55 to +125 −55 to +125 °C

Notes: 1. This is the allowable values up to Ta = 50°C. Derate by 8.3 mW/°C.

2. These are the allowable values up to Ta = 25°C mounting in air.

When it is mounted on glass epoxy board of 40 mm × 40 mm × 1.5 mmt with 30% wiring density,

the allowable value is 570 mW up to Ta = 45°C. If Ta > 45°C, derate by 7.14 mW/°C.

HA17358A Series

Rev.2, May 2001, page 4 of 4

Electrical Characteristics

(VCC = +15 V, Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Input offset voltage VIO — 3 7 mV VCM = 7.5V, RS = 50Ω, Rf = 50kΩ

Input offset current IIO — 5 50 nA VCM = 7.5V, IIO = | II (+) – II (–) |

Input bias current IIB — 30 250 nA VCM = 7.5V

Power source rejection

ratio

PSRR — 93 — dB RS = 1kΩ, Rf = 100kΩ

Voltage gain AVD 75 90 — dB RL = ∞, RS = 1kΩ, Rf = 100kΩ

Common mode rejection

ratio

CMR — 80 — dB RS = 50Ω, Rf = 5kΩ

VCM (+) 13.5 — — V RS = 1kΩ, Rf = 100kΩ Common mode input

voltage range VCM (–) — — –0.3 V RS = 1k•, Rf = 100kΩ

Peak-to-peak output

voltage

Vop-p — 13.6 — V f = 100Hz, RL = 20kΩ, RS = 1kΩ,

Rf = 100kΩ

Output source current Iosource 20 40 — mA VIN

+ = 1V, VIN

– = 0V, VOH = 10V

Output sink current Iosink 10 20 — mA VIN

– = 1V, VIN

+ = 0V, VOL = 2.5V

Output sink current Iosink 15 50 — µA VIN

– = 1V, VIN

+ = 0V,

Vout = 200mV

Supply current ICC — 0.8 2 mA VIN = GND, RL = ∞

Slew rate SR — 0.2 — V/µs RL = ∞, VCM = 7.5V, f = 1.5kHz

Channel separation CS — 120 — dB f = 1kHz

HA17358A Series

Rev.2, May 2001, page 5 of 5

Characteristic Curves

Output Source Current vs. Ambient Temperature

Output source current Iosource (mA)

Ambeint temperature Ta (°C)

−200 20406080

= 15 V

= 10 V

Input Bias Current vs. Ambient Temperature

Input bias current I

(nA)

Ambeint temperature Ta (°C)

−200 20406080

= 15 V

= 7.5 V

Supply Current vs. Supply Voltage

Supply current I

(mA)

Supply voltage V

(V)

08 16243240

Ta = 25°C80

Input bias current I

(nA)

Supply voltage V

(V)

08 16243240

Ta = 25°C

Voltage Gain vs. Supply Voltage

160

Voltage gain A

(dB)

Supply voltage V

(V)

120

08 16243240

Ta = 25°C

= ∞

Maxlmum Output Voltage vs. Frequency

Input Bias Current vs. Supply Voltage

Maximum output voltage V

(V)

Frequency f (Hz)

1 k 3 k 10 k 30 k 100 k 300 k

= 15 V

Ta = 25°C

= 20 kΩ

1 M

HA17358A Series

Rev.2, May 2001, page 6 of 6

Voltage Gain vs. Frequency

= 15V

Ta = 25°C

= ∞

Voltage gain A

(dB)

120

100

1 3 10 30 100 300 1 k 3 k 10 k 30 k 100 k 300 k 1 M

Frequency f (Hz)

= 15V

Ta = 25°C

= 50 Ω

120

100

100 300 1 k 3 k 10 k 30 k 100 k 300 k 1M

Frequency f (Hz)

Common Mode Rejection Ratio vs. Frequency

Common mode rejection ratio CMR (dB)

HA17358A Series

Rev.2, May 2001, page 7 of 7

Solder Mounting Method

1. Small and light surface-mount packages require spicial attentions on solder mounting.

On solder mounting, pre-heating before soldering is needed.

The following figure show an example of infrared rays refow.

2. The difference of thermal expansion coefficeient between mounted substrates and IC leads may cause a

failure like solder peeling or soler wet, and electrical characteristics may change by thermal stress.

Therefore, mounting should be done after sufficient confirmation for especially in case of ceramic

substrates.

Temperature

140 to 160°C

1 to 5°C/s

235°C Max 10 s Max

1 to 4°C/s

Time (s)

≅ 60 s

Figure 1 An Example of Infrared Rays Reflow Conditions

HA17358A Series

Rev.2, May 2001, page 8 of 8

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DP-8B

Conforms

0.51 g

Unit: mm

9.6

10.6 Max

0.89 1.3

6.3

7.4 Max

5.06 Max

2.54 ± 0.25 0.48 ± 0.10

7.62

0.25

+ 0.10

− 0.05

0° − 15°

2.54 Min

0.5 Min

1.27 Max

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

FP-8D

—

Conforms

0.10 g

Unit: mm

*Dimension including the plating thickness

Base material dimension

0.10 ± 0.10

2.03 Max

4.4

*0.22 ± 0.05

4.85

0.75 Max

0.40 ± 0.06

0.60 + 0.25

– 0.18

*0.42 ± 0.08

0.12

0.15

0˚ – 8˚

1.05

5.25 Max

1.27

0.20 ± 0.04

6.50+ 0.25

– 0.15

HA17358A Series

Rev.2, May 2001, page 9 of 9

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

FP-8DC

Conforms

—

0.085 g

Unit: mm

*Dimension including the plating thickness

Base material dimension

1.75 Max

4.90

0.25

0.15

0˚ – 8˚

1.27

3.95

0.40 ± 0.06

*0.42 ± 0.08

5.3 Max

0.75 Max

0.14+ 0.11

Ð 0.04

0.20 ± 0.03

*0.22 ± 0.03

0.60+ 0.67

– 0.20

6.10+ 0.10

– 0.30

1.08

HA17358A Series

Rev.2, May 2001, page 10 of 10

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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