CMA30E1600PN - Zilog - Datasheet.World

CMA 30 E 1600 PN

advanced

V = V

A²s

Standard SCR

Symbol Definition

R a t i n g s

Features / Advantages:

typ. max.

I

R/D

V

IA

V

T

1.45

R2.50 K/W

R

2 1

3

min.

30

Applications:

V

RSM/DSM

V1700

10T = 25°C

VJ

T = °C

VJ

mA2

Package:

Part number

V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

40

P

tot

50 WT = 25°C

C

T

VJ

150 °C-40

V

I

RRM

=

=1600

47

30

CMA 30 E 1600 PN

V

A

1600

max. non-repetitive reverse/forward blocking voltage

reverse current, drain current

forward voltage

virtual junction temperature

total power dissipation

Conditions Unit

1.70

T = 25°C

VJ

125

V

T0

V0.92T = °C

VJ

150

r

T

18 mΩ

V1.40T = °C

VJ

I = A

F

V

30

1.65

I = A

F

60

I = A

F

60

threshold voltage

slope resistance for power loss calculation only

Backside: Isolated

=30 A

● Housing:

Single Thyristor

TO-220FP

●

rIndustry standard outline

●

rPlastic overmolded tab for

●relectrical isolation

●

rIsolation Voltage 2500 V

●

rUL registered E 72873

●

rEpoxy meets UL 94V-0

●

rRoHS compliant

µA

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

of blocking currents and voltages

● Motor control

● Power converter

● AC power controller

● Switch mode and resonant mode

power supplies

● Light and temperature control

125

V

RRM/DRM

V1600

max. repetitive reverse/forward blocking voltage T = 25°C

VJ

I

T(RMS)

A

180° sine 47

RMS forward current

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

150

Wt = 300 µs 5

P

GAV

W0.5

average gate power dissipation

C

J

9

j

unction capacitance V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = °C

VJ

45

max. forward surge current

T = °C

VJ

150

I²t T = °C45

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T(AV)M

max. average forward current T = °C

VJ

150

T(RMS)

I

T(AV)M

260

280

240

A

220

240

340

325

1600

IXYS reserves the right to change limits, conditions and dimensions. 20080508b

Data according to IEC 60747and per diode unless otherwise specified

CMA 30 E 1600 PN

advanced

(di/dt)

cr

A/µ

s

150

repetitive, I =

T

VJ

= 125°C

critical rate of rise of current

V

GT

gate trigger voltage V= 6 V T = °C25

(dv/dt) T = 125 °C

critical rate of rise of voltage

A/µ

s

500

V/µ

s

f = 50 Hz; t = 200 µs

IA;

V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

Symbol Definition Ratings

typ. max.min.Conditions Uni

t

40 A

T

P

G

= 0.2 di /dt A/µs

G

=0.2

DDRM

cr

V = ⅔ V

D DRM

GK

500

1.3

V

T= °C-40

VJ

I

GT

gate trigger current V= 6 V T = °C25

DVJ

28 m

A

T= °C-40

VJ

1.6

V

50 m

A

V

GD

gate non-trigger voltage T= °C

VJ

0.2

V

I

GD

gate non-trigger current 1m

A

V = ⅔ V

D DRM

125

latching current T= °C

VJ

90 m

A

I

L

25tµs

p

=10

IA;

G

= 0.2 di /dt A/µs

G

=0.2

holding current T= °C

VJ

80 m

A

I

H

25V= 6 V

D

R = ∞

GK

gate controlled delay time T= °C

VJ

2µ

s

t

gd

25

IA;

G

= 0.5 di /dt A/µs

G

=0.5

V = ½ V

R DRM

turn-off time T= °C

VJ

150 µ

s

t

q

25

di/dt = A/µs;10 dv/dt = V/µs20

V =

R

100 V; I A

T

=22

V = ⅔ V

D DRM

tµs

p

= 200

non-repetitive, I = 22 A

T

;

IXYS reserves the right to change limits, conditions and dimensions. 20080508b

Data according to IEC 60747and per diode unless otherwise specified

CMA 30 E 1600 PN

advanced

I

RMS

A

per pin 35

R

thCH

K/W0.50

M

D

Nm0.6

mounting torque 0.4

T

stg

°C150

storage temperature -55

Weight g2

Symbol Definition Ratings

typ. max.min.Conditions

RMS current

thermal resistance case to heatsink

Unit

I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.

In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting

the backside.

F

C

N60

mounting force with clip 20

Ordering Delivering Mode Base Q ty Code Key

Standard Part Name

CMA 30 E 1600 PN 505254Tube 50

XXXXXX

YYWW

Logo

Marking on product

DateCode

Assembly Code

abcdef

Product Marking

C

M

A

30

E

1600

PN

Thyristor (SCR)

Standard SCR

(up to 1800V)

Single Thyristor

TO-220ABFP (3)

=

CMA30E1600PB

CS22-12io1M

CLA30E1200PB

CS29-12io1C

TO-220AB (3)

TO-220ABFP (3)

TO-220AB (3)

ISOPLUS220AB (3)

Similar Part Package

1)

1

)

Ma r king on Pr o d uc t

CMA30E1600PN

1600

1200

Voltage class

Current Rating [A]

Reverse Voltage [V]

=

RMS

CLA30E1200PC

CLA30E1200HB

CS22-08io1M

CS29-08io1C

TO-263AB (D2Pak)

TO-247AD (3)

TO-220ABFP (3)

ISOPLUS220AB (3)

1200

800

V

ISOL

V2500

t = 1 second

V2000

t = 1 minute

isolation voltage

d

S

mm1.07

creapage distance on surface

d

A

striking distance through air

Part number

IXYS reserves the right to change limits, conditions and dimensions. 20080508b

Data according to IEC 60747and per diode unless otherwise specified

CMA 30 E 1600 PN

advanced

Ø P

A

A1

H

A2

Q

L1

D

E

L

b

b1 c

e

Outlines TO-220FP

IXYS reserves the right to change limits, conditions and dimensions. 20080508b

Data according to IEC 60747and per diode unless otherwise specified