CMA 30 E 1600 PN advanced V RRM = I T(RMS) = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 CMA 30 E 1600 PN 1 3 Backside: Isolated Features / Advantages: Applications: Package: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages Motor control Power converter AC power controller Switch mode and resonant mode power supplies Light and temperature control Housing: TO-220FP rIndustry standard outline rPlastic overmolded tab for r electrical isolation rIsolation Voltage 2500 V rUL registered E 72873 rEpoxy meets UL 94V-0 rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage V 10 A VR = 1600 V TVJ = 125C 2 mA TVJ = 25C 1.45 V 1.70 V 1.40 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A RMS forward current 180 sine for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation TVJ = 125C 1.65 V T VJ = 150C 30 A 47 A TVJ = 150C 0.92 V 18 m 2.50 K/W 150 C TC = 25C 50 W T C = 150C 10 W -40 t P = 30 s t P = 300 s PGAV average gate power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2008 IXYS all rights reserved V 1600 I T(RMS) slope resistance 1700 TVJ = 25C TC = 40C rT Unit max. TVJ = 25C max. average forward current threshold voltage typ. VR = 1600 V I T(AV)M VT0 min. TVJ = 25C 5 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45C 340 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 325 As TVJ = 150C 240 As 240 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 9 pF 20080508b CMA 30 E 1600 PN advanced Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 125C min. typ. max. Unit 40 A 150 VD = VDRM non-repetitive, I T = 22 A 500 A/s VD = VDRM TVJ = 125 C 500 V/s TVJ = 25 C 1.3 V TVJ = -40 C 1.6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 125 C 0.2 V 1 mA TVJ = 25 C 90 mA VD = 6 V RGK = TVJ = 25 C 80 mA VR = 1/2 VDRM TVJ = 25 C 2 s repetitive, I T = A/s f = 50 Hz; tP = 200 s I G = 0.2 A; di G /dt = 0.2 A/s (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage RGK = ; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = VDRM t p = 10 s IG = 0.2 A; di G /dt = 0.2 A/s IH holding current t gd gate controlled delay time IG = 0.5 A; di G /dt = 0.5 A/s tq turn-off time VR = 100 V; I T = 22 A TVJ = 25 C 150 s VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s IXYS reserves the right to change limits, conditions and dimensions. (c) 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080508b CMA 30 E 1600 PN advanced Ratings Symbol Definition Conditions I RMS RMS current per pin 1) RthCH thermal resistance case to heatsink Tstg storage temperature min. max. Unit 35 0.50 -55 Weight A K/W 150 C 2 MD FC mounting torque V ISOL isolation voltage dS creapage distance on surface dA striking distance through air 1) typ. mounting force with clip g 0.4 0.6 Nm 20 60 N t = 1 second 2500 V t = 1 minute 2000 V 1.07 mm 1.07 mm IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Part number C M A 30 E 1600 PN Product Marking Marking on product Logo DateCode Assembly Code Ordering Standard Thyristor (SCR) Standard SCR (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220ABFP (3) abcdef YYWW XXXXXX Part Name CMA 30 E 1600 PN Similar Part CMA30E1600PB CS22-12io1M CLA30E1200PB CS29-12io1C CLA30E1200PC CLA30E1200HB CS22-08io1M CS29-08io1C IXYS reserves the right to change limits, conditions and dimensions. (c) 2008 IXYS all rights reserved = = = = = = = Marking on Product CMA30E1600PN Package TO-220AB (3) TO-220ABFP (3) TO-220AB (3) ISOPLUS220AB (3) TO-263AB (D2Pak) TO-247AD (3) TO-220ABFP (3) ISOPLUS220AB (3) Delivering Mode Tube Base Qty Code Key 50 505254 Voltage class 1600 1200 1200 1200 1200 1200 800 800 Data according to IEC 60747and per diode unless otherwise specified 20080508b CMA 30 E 1600 PN advanced Outlines TO-220FP OP A E A1 H Q D L1 A2 L b1 b c e IXYS reserves the right to change limits, conditions and dimensions. (c) 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080508b