© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 24N50Q 24 A
26N50Q 26 A
IDM TC= 25°C, Note 1 24N50Q 96 A
26N50Q 104 A
IAR TC= 25°C 24N50Q 24 A
26N50Q 26 A
EAR TC= 25°C 30 mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
zIXYS advanced low Qg process
zInternational standard packages
zLow RDS (on)
zUnclamped Inductive Switching (UIS)
rated
zFast switching
zMolding epoxies meet UL 94 V-0
flammability classification
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 24N50Q 0.23 Ω
Note 2 26N50Q 0.20 Ω
DS98512G(03/03)
HiPerFETTM
Power MOSFETs
Q-Class
TO-247 AD (IXFH)
(TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
VDSS ID25 RDS(on)
IXFH/IXFT 24N50Q 500 V 24 A 0.23 ΩΩ
ΩΩ
Ω
IXFH/IXFT 26N50Q 500 V 26 A 0.20 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, Note 2 14 24 S
Ciss 3900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 500 pF
Crss 130 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 ns
td(off) RG = 2 Ω (External), 55 ns
tf16 ns
Qg(on) 95 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC
Qgd 40 nC
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 24N50Q 24 A
26N50Q 26 A
ISM Repetitive; Note1 24N50Q 96 A
26N50Q 104 A
VSD IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/ µs, VR = 100 V 0.85 µC
IRM 8A
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min Recommended Footprint
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Note 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
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© 2003 IXYS All rights reserved
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
5
10
15
20
25
30
VGS - Volts
02468
ID - Amperes
0
10
20
30
40
50
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
0.8
1.2
1.6
2.0
2.4
ID = 13A
VDS - Volts
0 4 8 121620
ID - Amperes
0
10
20
30
40
50
VDS - Volts
0 4 8 12 16 20
ID - Amperes
0
10
20
30
40
50
60
5V
TJ = 125OC
VGS = 10V
TJ = 25OC
6V
5V
6V
VGS=10V
9V
8V
7V
VGS=10V
9V
8V
7V
ID = 26A
TJ = 25oC
ID - Amperes
0 102030405060
RDS(ON) - Normalized
0.8
1.2
1.6
2.0
2.4
2.8
TJ = 125oC
VGS = 10V
TJ = 125oC
IXF_26N50Q
TJ = 25oC
IXF_24N50Q
Fig.1 Output Characteristics @ Tj = 25°C Fig.2 Output Characteristics @ Tj = 125°C
Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain
to Source Resistance
Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID - Amperes
0
5
10
15
20
25
30
35
40
45
50
Pulse Width - Seconds
10-5 10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.00
0.01
0.10
1.00
VDS - Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Gate Charge - nC
0 20406080100120
VGS - Volts
0
2
4
6
8
10
12
Crss
Coss
Ciss
VDS = 250 V
ID = 13 A
IG = 10 mA
f = 1MHz
TJ = 125OC
Single Pulse
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
TJ = 25OC
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
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