ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
5/2/03
0.26
0.5
Dimensions in mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
lBSI approved - Certificate No. 8001
DESCRIPTION
The 4N35, 4N36, 4N37 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio (100% min.)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
3 4
6
2 5
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 70V
Emitter-collector Voltage BVECO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB90046m-AAS/A3
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Current (IR)10 µA VR = 6V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA
( Note 2 )
Collector-base Breakdown (BVCBO)70 VIC = 100µA
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Collector-base Dark Current (ICBO)20 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) 100 %10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.3 V10mA IF , 0.5mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Turn-on Time ton 510 µsVCC = 10V ,
Turn-off Time toff 510 µsIC= 2mA, RL = 100Ω
Output Rise Time tr 3.5 µs( FIG 1)
Output Fall Time tf 4.9 µs
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
5/2/03
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 100Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
DB90046m-AAS/A3
5/2/03
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current IF (mA)
70
80
-30 0 25 50 75 100 125
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Ambient temperature TA ( °C )
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
IF = 5mA
10
15
20
30
50
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = 10mA
IC = 0.5mA
-30 0 25 50 75 100
-30 0 25 50 75 100
DB90046m-AAS/A3
