C
TOP
B E
C
BACK
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
MMBT3906M TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
3N
B E
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
S
y
mbol Paramete
r
V
alue Units
V
CBO
Collecto
r
-Base Volta
g
e -40 V
V
CEO
Collecto
r
-Emitter Volta
g
e -40 V
V
EBO
Emitte
r
-Base Volta
g
e -5 V
I
C
Collector Current -Continuous -200 mA
P
D
Power Dissi
p
ation 150 m
W
RÆŸ
JA
Thermal Resistance
,
Junction to Ambient 833 ℃
/
W
T
J
O
p
eratin
g
Tem
p
erature 150 ℃
T
stg
Stora
g
e and Tem
p
erature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Paramete
r
S
y
mbol Test conditions MIN TYP MAX UNIT
Collecto
r
-base breakdown volta
g
e V
(
BR
)
CBO IC=-10
µ
A,IE=0 -40 V
Collecto
r
-emitter breakdown volta
g
e V
(
BR
)
CEO IC=-1mA,IB=0 -40 V
Emitte
r
-base breakdown volta
g
e V
(
BR
)
EBO IE=-10
µ
A,IC=0 -5 V
Collector cut-off current ICE
X
VCE=-30V,VEB
(
off
)
=-3V -0.05
µ
A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1
µ
A
hFE
(
1
)
VCE=-1V,IC=-0.1mA 60
hFE
(
2
)
VCE=-1V,IC=-1mA 80
hFE
(
3
)
VCE=-1V,IC=-10mA 100 300
hFE
(
4
)
VCE=-1V,IC=-50mA 60
DC current gain
hFE
(
5
)
VCE=-1V,IC=-100mA 30
VCE
(
sat
)
1IC=-10mA,IB=-1mA -0.25 V
Collector-emitter saturation voltage VCE
(
sat
)
2IC=-50mA,IB=-5mA -0.4 V
VBE
(
sat
)
1IC=-10mA,IB=-1mA -0.65 -0.85 V
Base-emitter saturation voltage VBE
(
sat
)
2IC=-50mA,IB=-5mA -0.95 V
Transition fre
q
uenc
y
fTVCE=-20V,IC=-10mA,f=100MHz 250 MHz
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector output capacitan ce Cobo V
CB=-5V,IE=0,f=1MHz 4.5 pF
Input capacitance Ciob V
EB=-0.5V,IC=0,f=1MHz 10 pF
Noise figure NF VCE=-5V,Ic=0.1mA,f=1KHz,RS=1KΩ 4 dB
Delay time td 35 nS
Rise time tr
VCC=-3V, VBE(OFF)=0.5V,IC=-10mA ,
IB1=-1mA 35 nS
Storage time tS 225 nS
Fall time tf VCC=-3V, IC=-10mA,IB1= IB2=- 1mA 75 nS
Typical Characteristics MMBT3906M
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.170 0.270 0.007 0.011
b1 0.270 0.370 0.011 0.015
b2
D 1.150 1.250 0.045 0.049
E 1.150 1.250 0.045 0.049
D2
E2
e
L
L1
L2
k
z 0.090 REF. 0.004 RE F.
0.230 REF.
0.150 REF. 0.009 RE F.
0.010 RE F.
0.300 REF. 0.012 RE F.
0.280 REF. 0.011 RE F.
0.006 RE F.
Symbol D imensions In M illimeters D imensions In Inches
0.800 TYP . 0.032 TYP .
0.470 REF.
0.810 REF. 0.002 RE F.
0.032 RE F.
0.250 RE F.
