© 2008 IXYS CORPORATION, All rights reserved DS99888A (04/08)
VDSS = 1200V
ID25 = 13A
RDS(on) ≤≤
≤≤
≤ 630mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C13A
IDM TC= 25°C, pulse width limited by TJM 50 A
IATC= 25°C10A
EAS TC= 25°C1J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 290 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120/4.5..27 N/lb.
Weight 5g
G = Gate D = Drain
S = Source
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 10A, Note 1 630 mΩ
Features
•Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
•Low drain to tab capacitance(<30pF)
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Fast intrinsic Rectifier
Advantages
•Easy assembly
•Space savings
•High power density
Isolated Tab
ISOPLUS247 (IXFR)
E153432
IXFR20N120P
PolarTM Power MOSFET
HiPerFETTM
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR20N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 10A, Note 1 10 16 S
Ciss 11.1 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 600 pF
Crss 60 pF
RGi Gate input resistance 1.60 Ω
td(on) Resistive Switching Times 49 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 10A 45 ns
td(off) RG= 1Ω (External) 72 ns
tf 70 ns
Qg(on) 193 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 74 nC
Qgd 85 nC
RthJC 0.43 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 20 A
ISM Repetitive, pulse width limited by TJM 80 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.84 μC
IRM 9 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 10A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ISOPLUS247 (IXFR) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFR20N120P
Fig. 6. Maximum Drain Current vs.
Case Temper atur e
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Centig rade
I
D
- Am peres
Fi g. 1. Ou tpu t Ch ar acteri sti cs
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
024681012
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
7
V
8
V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
7
V
8
V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8101214161820222426
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
8V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 10A Value
vs. Ju ncti o n Temp er atu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centi grade
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 20A
I
D
= 10A
Fig. 5. RDS(on) Normalized to ID = 10A Value
vs. Dr ai n Cu r ren t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35 40
I
D
- Amperes
R
DS(on)
- N ormalize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR20N120P
IXYS REF: F_20N120P(86) 04-03-08-B
Fi g . 12. Maxi mu m Tran si en t Thermal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Vo lts
I
D
- A mpere s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30 35
I
D
- Amperes
g
f s - Siem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
0.30.40.50.60.70.80.91.01.11.21.3
V
SD
- Volts
I
S
- A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 600V
I
D
= 10A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
