HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002. 02.26
Page No. : 1/4
HTIP102 HSMC Produc t Specification
HTIP102
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP102 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperatu re........................................................................................................ -55 ~ +150 °C
Juncti on Tempe rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 80 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current........................................................................................................................... 8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
BVCEO 100 - - V IC=30mA, IB=0
ICBO - - 50 uA VCB=100V, IE=0
ICEO - - 50 uA VCE=50V, IB=0
IEBO - - 8 mA VEB=5V, IC=0
*VCE(sat)1 - - 2 V IC=3A, IB=6mA
*VCE(sat)2 - - 2.5 V IC=8A, I B=80mA
*VBE(on) - - 2.8 V IC=8A, VCE=4V
*hFE1 1 - 20 K IC=3A, VCE=4V
*hFE2 200 - - IC=8A, VCE=4V
Cob - - 200 pF VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
R2R1
C
E
B
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 2/4
HTIP102 HSMC Product Specification
Characteristics Curve
Current Gain & Collector Curren t
1
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
hFE
25oC
125oC
75oC
hFE @ VCE=4V
Saturation Voltage & Col lect or Curren t
100
1000
10000
100 1000 10000
Coll e c tor Current - I
C
(mA)
Sat u r ation Volt ag e (m V)
V
CE(sat)
@ I
C
=500I
B
125
o
C75
o
C
25
o
C
Saturation Voltage & Col lect or Curren t
100
1000
10000
100 1000 10000
Coll e c tor Current - I
C
(mA)
Saturation Voltage (mV)
VCE(sat) @ I C=100IB
125oC
75oC
25oC
ON Voltage & Collcetor Curren t
100
1000
10000
100 1000 10000
Collector Curren t-I
C
(mA)
O N Voltage ( mV)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C
125
o
C
Switching Time & Col lect or Current
0.1
1
10
110
Collector Curren t (A)
Swit c h in g Times ( u S)...
Tstg
V
CC
=30V , I
C
=250I
B1
=-250I
B2
Tf
Ton
Capacitance & R e verse- Bia sed Voltage
10
100
1000
0.1 1 10 100
R evers e- Biased Vol tage (V)
Capacitance (pF)
Cob
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 3/4
HTIP102 HSMC Product Specification
Safe Operatin g Ar ea
1
10
100
1000
10000
100000
1 10 100
Forward Vol tage-V
CE
(V)
Collect or Current ( m A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 4/4
HTIP102 HSMC Product Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the mini mum thickness of base material.
4.If there is any questi on with packi ng specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 A lloy; solder plating
• Mold Compound: Epoxy resin fam ily, flammability solid burni ng cl ass: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without t he prior writt en approval of HSMC.
• HSMC reserves the right to mak e changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, inf ri ngement of patents, or appl ication assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
HTIP
102
