MJ10009/D - ON Semiconductor

Motorola Bipolar Power Transistor Device Data

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The MJ10009 Darlington transistor is designed for high–voltage, high–speed,

power switching in Inductive circuits where fall time is critical. It is particularly suited

for line operated switchmode applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn–Off Times

1.6 µs (max) Inductive Crossover Time – 10 A, 100

3.5 µs (max) Inductive Storage Time – 10 A, 100

Operating Temperature Range –65 to +200

100

C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEX

ÎÎÎÎÎ

500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEV

ÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎ

ICM

ÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎ

IBM

ÎÎÎÎÎ

2.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎÎ

175

100

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎ

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎÎ

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ10009/D

 Motorola, Inc. 1995

20 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

450 and 500 VOLTS

175 WATTS



CASE 1–07

TO–204AA

(TO–3)



*Motorola Preferred Device

≈

100

≈

REV 2

MJ10009

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

500

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Sustaining Voltage (Table 1, Figure 12)

(IC = 2 A, Vclamp = Rated VCEX, TC = 100

C, VBE(off) = 5 V)

(IC = 10 A, Vclamp = Rated VCEX, TC = 100

C, VBE(off) = 5 V)

ÎÎÎÎ

VCEX(sus)

ÎÎÎÎ

500

375

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.25

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 2 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

175

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎ

See Figure 11

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 10 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

400

300

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 500 mAdc)

(IC = 20 Adc, IB = 2 Adc)

(IC = 10 Adc, IB = 500 mAdc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

3.5

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 500 mAdc)

(IC = 10 Adc, IB = 500 mAdc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage (1)

(IF = 10 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎÎ

325

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 10 A,

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.12

ÎÎÎÎ

0.25

ÎÎÎ

µs

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 10 A,

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎÎ

1.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎÎ

2.0

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.2

ÎÎÎÎ

0.6

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

C = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎÎ

3.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

—

ÎÎÎÎ

0.36

ÎÎÎÎ

1.6

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

C = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

0.18

ÎÎÎÎ

—

ÎÎÎ

µs

(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

(2) Pulse Test: PW = 300 µs, Duty Cycle ≤ 2%.

MJ10009

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

20 0.2 1 2

200

100

Figure 2. Collector Saturation Region

0.03 IB, BASE CURRENT (AMP)

10.05 0.1 0.2 0.5 1 2 3

2.6

2.2

1.8

1.4 TJ = 25

400

hFE, DC CURRENT GAIN

TJ = 150

VCE = 5 V

0.5 5 10 20

IC = 5 A 10 A 20 A

V, VOLTAGE (VOLTS)

VBE, BASE–EMITTER VOLTAGE (VOLTS)

104

103

102

101

, COLLECTOR CURRENT ( A)IC

100

0 +0.2–0.2

VCE = 250 V

TJ = 125

100

Figure 3. Collector–Emitter Saturation Voltage

2.4

0.2 IC, COLLECTOR CURRENT (AMP)

0.4 0.3 0.5 0.7 1 2 5 20

1.6

1.2

0.8

IC/IB = 10

TJ = – 55

Figure 4. Base-Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.80.2 0.3 0.5 0.7

2.4

1.6

1.2

Figure 5. Collector Cutoff Region

0.4

Figure 6. Output Capacitance

VR, REVERSE VOLTAGE (VOLTS)

50 1 2 20 60100.6

200

TJ = 25

Cob

1000

500

100

100 200 400

V, VOLTAGE (VOLTS)

150

2 5 2073 101

150

TJ = – 55

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 3 V

10–1 +0.4 +0.8+0.6 4 6 40

700

300

Cob, OUTPUT CAPACITANCE (pF)

REVERSE FORWARD

TYPICAL CHARACTERISTICS

MJ10009

4 Motorola Bipolar Power Transistor Device Data

IC(pk)

t1tf

VCE

TEST CIRCUITS CIRCUIT

VALUES INPUT

CONDITIONS

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

Vclamp = Rated VCEX Value

VCC = 250 V

RL = 25 Ω

Pulse Width = 25 µs

TIME

tf CLAMPED

VCE or

Vclamp

tf UNCLAMPED

[

20 1

PW Varied to Attain

IC = 100 mA

DRIVER SCHEMATIC

INDUCTIVE TEST CIRCUIT

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

For inductive loads pulse width

is adjusted to obtain specified IC

+10

0.05

HP214

– 38 V

1000

0.005

2.0

2N3762

100

+ V DRIVE

0.005

MTP3055E

– Voff

DRIVE

–

+ –

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

IB1

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

TUT

VCC

t1 ≈Lcoil (ICpk)

VCC

t2 ≈Lcoil (ICpk)

VClamp

Table 1. Test Conditions for Dynamic Performance

90% VCEM

IC90% ICM

ICM VCEM

90% IB1

VCE

IB10% VCEM 10%

ICM 2% IC

tsv trv tfi tti

Figure 7. Inductive Switching Measurements

TIME

Vclamp

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage wa-

veforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

MJ10009

Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS

SWITCHING TIMES NOTE (continued)

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222.

PSWT = 1/2 VCC IC (tc) f

Typical inductive switching waveforms are shown in Fig-

ure 7. In general, t rv + tfi

]

tc. However, at lower test cur-

rents this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25

C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user oriented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100

Figure 8. Turn-On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

0.1

VCC = 250 V

IC/IB = 20

TJ = 25

1.0

Figure 9. Turn-Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

0.5

0.1

0.05

VCC = 250 V

IC/IB = 20

VBE(off) = 5 V

TJ = 25

0.2

tP = 25

s, DUTY CYCLE

tP = 25

s, DUTY CYCLE

0.2

0.5

201 52 10 201 52 10

RESISTIVE SWITCHING PERFORMANCE

Figure 10. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1 k500

JC (t) = r(t) R

JC = 1.0

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

MJ10009

6 Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 1 1 and 12 are

specified ratings for these devices under the test conditions

shown.

Figure 11. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

0.1

0.005 6 10 20 600

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

0.05

IC, COLLECTOR CURRENT (AMP)

0.2

100 200 450

100

Figure 12. Reverse Bias Switching

Safe Operating Area (MJ10009)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0500

IC, COLLECTOR CURRENT (AMP)

300 400100 200

VBE(off) = 5 V

1 ms

MJ10009

VBE(off) = 2 V

VBE(off) = 0 V

TC = 100

IC/IB1

≥

0.02

0.01

500

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 11 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 11 may be found at any case tem-

perature by using the appropriate curve on Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as VCEX(sus) at a given collector current

and represents a voltage–current condition that can be sus-

tained during reverse biased turn–off. This rating is verified

under clamped conditions so that the device is never sub-

jected to an avalanche mode. Figure 12 gives the complete

reverse bias safe operating area characteristics. See Table 1

for circuit conditions.

Figure 13. Power Derating

VBE(off), REVERSE BASE CURRENT (VOLTS)

02 5 87

IB2(pk), BASE CURRENT (AMP)

IC = 10 A

SEE TABLE 1 FOR CONDITIONS,

FIGURE 7 FOR WAVESHAPE.

100

00 40 80 120 200

Figure 14. Reverse Base Current versus

VBE(off) with No External Base Resistance

TC, CASE TEMPERATURE (

POWER DERATING FACTOR (%)

THERMAL DERATING

FORWARD BIAS

SECOND BREAKDOWN

DERATING

160

MJ10009

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MJ10009

8 Motorola Bipolar Power Transistor Device Data

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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

MJ10009/D

*MJ10009/D*

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