LL4148 HIGH SPEED SWITCHING DIODE
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics
C ambient temperature unless otherwise specified
Symbol Value Unit
VRM 100 V
VR75 V
Maximum Continuous Current (1) IF200 mA
Maximum Average Forward Current
Half Wave Rectification with Resistive Load, f ≥ 50Hz (1)
Maximum Surge Forward Current at t < 1s and Tj = 25°CIFSM 500 mA
Maximum Power Dissipation (1) PD500 mW
Thermal Resistance Junction to tie-point RθJtp 300 °C/W
Maximum Junction Temperature TJ175 °C
Storage Temperature Range TS-65 to + 175 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
(T
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
VR = 20 V - - 25 nA
VR = 75 V - - 5 µA
V
= 20 V , Tj = 150 °C - - 50 µA
Forward Voltage VFIF = 10 mA - - 1 V
Diode Capacitance Cd - - 4 pF
IF = 10 mA , IR = 1mA,
V
= 6 V, R
= 100Ω
Page 1 of 2 Rev. 02 : March 25, 2005
IF(AV) 150 mA
IR
Test Condition
f = 1MHz ; VR = 0
Reverse Recovery Time Trr ns4--
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Reverse Current
0.098 (2.50)
Max.
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Dimensions in inches and ( millimeters )
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.079 (2.00)Min.