Data Sheet Switching Diode DAN222WM lDimensions (Unit : mm) lApplications High frequency switching lLand size figure (Unit : mm) lFeatures 1)Ultra small mold type. (EMD3) 2)High reliability 1.3 0.7 1.0 0.5 0.5 0.7 0.7 1N 0.6 0.6 EMD3 lConstruction Silicon epitaxial planer lStructure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 80 80 300 100 4 150 150 Unit V V mA mA A mW C C -55 to +150 Min. Typ. Max. Unit - - 1.2 V IF=100mA Conditions Reverse current Capacitance between terminals IR - - 0.1 A VR=70V Ct - - 3.5 pF Reverse recovery time trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A Data Sheet DAN222WM 100 10000 Ta=125C 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 Ta=125C 1 Ta=75C Ta=25C 0.1 Ta=-25C 0.01 0 0.5 Ta=75C 100 Ta=25C 10 1 Ta=-25C 0.1 0.01 1 FORWARD VOLTAGEVF(V) VF-IF CHARACTERISTICS 0 20 40 60 80 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 f=1MHz VR=6V n=30pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1 0.7 AVE:0.52pF 0.5 0.3 0.1 0 10 20 0.1 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25C IF=100mA n=30pcs 940 930 920 AVE:905.0 mV 45 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 950 Ta=25C VR=70V n=30pcs 40 35 30 25 20 15 AVE:8.1nA 10 910 5 0 900 IR DISPERSION MAP VF DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.A Data Sheet DAN222WM 1000 Ta=25C IF=100mA IR=100mA Irr=0.1*IR n=10pcs 25 AVE:19.0ns 20 TRANSIENT THERMAL IMPEDANCE:Rth (C/W) REVERSE RECOVERY TIME:trr(ns) 30 15 10 5 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board 10 0.001 0 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS trr DISPERSION MAP 100 20 PEAK SURGE FORWARD CURRENT:IFSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) n=10pcs 15 AVE: 8.0kV 10 AVE: 1.6kV 5 0 IFSM t 10 1 C=200pF R=0 C=100pF R=1.5k 5 10 100 5 IFSM 4 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1 TIME:t(ms) IFSM-t CHARACTERISTICS ESD DISPERSION MAP 8.3m 8.3ms s 1cyc 3 2 1 0 0.1 4 IFSM 8.3ms 1cyc 3 2 AVE:2.5A 1 1 10 0 100 IFSM DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: DAN222WMTL