Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAN222WM
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
High frequency switching
lFeatures
1)Ultra small mold type. (EMD3)
2)High reliability
lConstruction lStructure
Silicon epitaxial planer
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage
VF- - 1.2 V IF=100mA
Reverse current
IR- - 0.1 μA VR=70V
Ct - - 3.5 pF
VR=6V , f=1MHz
trr - - 4 ns
VR=6V , IF=5mA , RL=50Ω
Reverse voltage (DC)
80
lTaping dimensions (Unit : mm)
Parameter
Limits
Reverse voltage (repetitive)
80
Forward voltage(repetitive peak)
300
Average rectified forward current
100
Surge current(t=1s)
4
Parameter
Capacitance between terminals
Reverse recovery time
Power dissipation
150
Junction temperature
150
Storage temperature
-55 to +150
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6
0.6
1.3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
1N
1/3
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN222WM
0.01
0.1
1
10
100
0 0.5 1
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
100
1000
10000
020 40 60 80
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=25°C
Ta=75°C
Ta=125°C
Ta=-25°C
0.1
1
10
010 20 30
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
0.1
0.3
0.5
0.7
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
f=1MHz
VR=6V
n=30pcs
AVE:0.52pF
900
910
920
930
940
950
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
AVE:905.0 mV
Ta=25°C
IF=100mA
n=30pcs
0
5
10
15
20
25
30
35
40
45
50
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
Ta=25°C
VR=70V
n=30pcs
AVE:8.1nA
2/3 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN222WM
1
10
100
0.1 1 10 100
0
5
10
15
20
25
30
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
Ta=25°C
IF=100mA
IR=100mA
Irr=0.1*IR
n=10pcs
AVE:19.0ns
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
Mounted on epoxy board
0
5
10
15
20
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
AVE: 8.0kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
AVE: 1.6kV
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
t
IFSM
0
1
2
3
4
5
110 100
8.3m
s
IFSM
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
2
3
4
5
AVE:2.5A
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
IFSM
1cyc
3/3 2011.10 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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