1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
* : Package Mounted On 99.5% Alumina 10ᴧ8ᴧ0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
AX
TYPE MMBTA13 MMBTA14
MARK AIX AHX
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage VCES IC=0.1mA 30 - - V
Emitter Cut-off Current ICBO VCB=30V -- 100 nA
Emitter Cut-off Current IEBO VEB=10V - - 100 nA
DC Current Gain
MMBTA13
hFE *
IC=10mA, VCE=5V 5,000 - -
-
MMBTA14 10,000 - -
MMBTA13 IC=100mA, VCE=5V 10,000 - -
MMBTA14 20,000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE IC=100mA, VCE=5V - - 2.0 V
Current Gain Bandwith Product fTIC=10mA, f=100MHz, VCE=5V 125 - - MHz
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collertor Current IC500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ