©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX33/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
IC Collector Current (DC) 10 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 0.25 A
PC Collector Dissipation (TC=25°C) 70 W
TJ Junction Temperature 150 °C
TSTG Storage Temperatu re - 65 ~ 150 °C
BDX33/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose
• Power Darlington TR
• Complement to BDX34/34A/34B/34C respec tively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX33/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulse
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
IC = 100mA IB = 0 45
60
80
100
V
V
V
V
VCER(sus) * Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
IC = 100mA, IB = 0
RBE = 100Ω 45
60
80
100
V
V
V
V
VCEV(sus) * Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
IC = 100mA, IB = 0
VBE = 1.5V 45
60
80
100
V
V
V
V
ICBO
Collector Cut-off Current: BDX33
: BDX33A
: BDX33B
: BDX33C
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA
ICEO Collector Cut-off Current : BDX33
: BDX33A
: BDX33B
: BDX33C
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
0.5
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 5 mA
hFE * DC Current Gain : BDX33/34
: BDX33B/33C VCE = 3V, IC = 4A
VCE = 3V, IC = 3A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BDX33/33A
: BDX33B/33C IC = 4A, IB = 8mA
IC = 3A, IB = 6mA 2.5
2.5 V
V
VBE(on) * Base-Emitter ON Voltage
: BDX33/33A
: BDX33B/33C
VCE = 3V, IC = 4A
VCE = 3V, IC = 3A 2.5
2.5 V
V
VF* Parallel Diode Forward Voltage IF = 8A 4 V
©2000 Fairchild Semiconductor International
BDX33/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC Current Gain Fi gure 2. Collector -Emitt e r Sa turation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.1 1 10
100
1k
10k
100k
VCE = 3 V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
0.1 1 10
0.1
1
10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
01234
0.0
2.5
5.0
7.5
10.0
VCE = 3 V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE
1 10 100
10
100
1000
f=1MHz
IE=0
Cob [pF], CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
10 us
100 us
1 ms5 ms
DC
BDX33C
BDX33B
BDX33A
BDX33
IC MAX. (Pulsed)
IC MAX. (Continuous)
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PD [W], POWER DISSIPATION
Tc [oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX33/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
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