2N2944A - 2N2946A PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N2944A thru 2N2946A series. * JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/382 available. * RoHS compliant versions available (commercial grade only). TO-46 (TO-206AB) Package APPLICATIONS / BENEFITS * * Also available in: Low profile metal can package. ESD to Class 3 per MIL-STD-750, method 1020. UB package (surface mount) 2N2944AUB - 2N2946AUB o MAXIMUM RATINGS @ +25 C unless specified otherwise. Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Collector Current (dc) Emitter to Base voltage (static), collector open 2N2944A 2N2945A 2N2946A Collector to Base voltage (static), 2N2944A emitter open 2N2945A 2N2946A Collector to Emitter voltage (static), 2N2944A base open 2N2945A 2N2946A Emitter to Collector voltage 2N2944A 2N2945A 2N2946A o (1) Total Power Dissipation, all terminals @ T A = +25 C o Symbol Value T J and T STG R JA IC V EBO -65 to +200 435 -100 -15 -25 -40 -15 -25 -40 -10 -20 -35 -10 -20 -35 400 V CBO V CEO V ECO PT o Notes: 1. Derate linearly 2.30 mW / C above T A = +25 C. Unit o o C C/W mA V V V MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 V mW MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0236, Rev. 1 (11960) (c)2011 Microsemi Corporation Page 1 of 5 2N2944A - 2N2946A MECHANICAL and PACKAGING * * * * * CASE: Nickel plated kovar, glass seals. TERMINALS: Gold plating over nickel, solder dipped, kovar. MARKING: Part number, date code, manufacturer's ID. WEIGHT: 0.234 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2944A (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IB IE V CB V EB V (BR) Base current (dc). Emitter current (dc). Collector to base voltage (dc). Emitter to base voltage (dc). Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. T4-LDS-0236, Rev. 1 (11960) (c)2011 Microsemi Corporation Page 2 of 5 2N2944A - 2N2946A o ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted. Characteristic Symbol Min. Max. Unit OFF CHARACTERISTICS: Collector-Emitter Breakdown Voltage IC = -10 A 2N2944A 2N2945A 2N2946A V(BR)CEO -10 -20 -35 V 2N2944A 2N2945A 2N2946A V(BR)ECO -10 -20 -35 V Collector-Base Cutoff Current VCB = -15 V VCB = -25 V VCB = -40 V 2N2944A 2N2945A 2N2946A ICBO 10 10 10 A Emitter-Base Cutoff Current VEB = -12 V VEB = -20 V VEB = -32 V 2N2944A 2N2945A 2N2946A IEBO 2N2944A 2N2945A 2N2946A Forward-Current Transfer Ratio (inverted connection) 2N2944A IE = -200 A, VEC = -0.5 V 2N2945A 2N2946A Emitter-Collector Offset Voltage IB = -200 A, IE = 0 2N2944A 2N2945A 2N2946A 2N2944A IB = -1.0 mA, IE = 0 2N2945A 2N2946A 2N2944A IB = -2.0 mA, IE = 0 2N2945A 2N2946A hFE 100 70 50 hFE(inv) 50 30 20 Emitter-Collector Breakdown Voltage IE = -10 A, I B = 0 -0.1 -0.2 -0.5 A VEC(ofs) -0.3 -0.5 -0.8 -0.6 -1.0 -2.0 -1.0 -1.6 -2.5 mV 2N2944A 2N2945A 2N2946A 2N2944A 2N2945A 2N2946A rec(on) 10 12 14 4.0 6.0 8.0 2N2944A 2N2945A 2N2946A |hfe| ON CHARACTERISTICS: (1) Forward-Current Transfer Ratio IC = -1.0 mA, VCE = -0.5 V DYNAMIC CHARACTERISTICS: Emitter-Collector On-State Resistance IB = -100 A, IE = 0, Ie = 100 A ac (rms) f = 1.0 kHz IB = -1.0 mA, IE = 0, Ie = 100 A ac (rms) f =1.0 kHz Magnitude of Small-Signal Forward Current Transfer Ratio IC = -1.0 mA, VCE = -6.0V, f = 1.0 MHz Output Capacitance VCB = -6.0 V, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = -6.0 V, IC = 0, 100 kHz f 1.0 MHz 15 10 5.0 55 55 55 Cobo 10 pF Cibo 6.0 pF (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. T4-LDS-0236, Rev. 1 (11960) (c)2011 Microsemi Corporation Page 3 of 5 2N2944A - 2N2946A Maximum DC Operation Rating (mW ) GRAPHS o T A ( C) Ambient Temperature FIGURE 1 - Temperature-Power Derating Curve T4-LDS-0236, Rev. 1 (11960) (c)2011 Microsemi Corporation Page 4 of 5 2N2944A - 2N2946A PACKAGE DIMENSIONS Ltr. CD CH HD LC LD LL LU L1 L2 Q TL TW r Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 44.45 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45 TP 45 TP Notes 5 6 6 6 6 3 8 4 9 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. T4-LDS-0236, Rev. 1 (11960) (c)2011 Microsemi Corporation Page 5 of 5