7MBR100SD060 IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
600V / 100A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Thyristor Brake Inverter
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
600
±20
100
200
100
400
600
±20
50
100
200
600
800
800
100
1050
125
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Thyristor Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, Ic=100A chip
terminal
VGE=0V, V CE=10V, f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG=24Ω
IF=100A chip
terminal
IF=100A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51Ω
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=100A chip
terminal
IF=100A chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
250
200
8.5
2.6
1.2
0.6
1.0
0.35
2.7
300
250
200
2.6
1.2
0.6
1.0
0.35
250
1.0
1.0
100
2.5
1.15
1.5
250
10000
5.5 7.8
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.31
0.70
0.63
0.35 °C/W
0.47
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR100SD060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
1.8
2.15
0.45
0.25
0.40
0.05
1.6
1.95
1.8
2.05
0.45
0.25
0.40
0.05
1.0
1.15
1.1
1.2
5000
465 495 520
3305 3375 3450
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR100SD060
Characteristics (Representative)
012345
0
50
100
150
200
250
10V
12V
15V
VGE = 20 V
[ Inv e rter ]
Collector current vs. Collector-Emitter voltage
T j= 25°C(t yp.)
Collector current : Ic [ A ]
Co llecto r - Em itte r vo lta ge : V C E [ V ]
012345
0
50
100
150
200
250
10V
12V
15V
VGE = 20 V
[ Inv e rter ]
Collector current vs. Collector-Emitter voltage
T j= 125°C(typ.)
Co llecto r - Em itte r vo lta ge : V C E [ V ]
Collector current : Ic [ A ]
01234
0
50
100
150
200
250
Tj = 2 5 °C Tj= 125°C
[ Inv e rter ]
Collector current vs. Collector-Emitter v oltage
VGE=15V (typ.)
Co llecto r - Em itte r vo lta ge : V C E [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 50A
Ic=100A
Ic=200A
[ Inv e rter ]
Collector-Emitter voltage vs. G ate-Emitter v oltage
T j= 25°C(t yp.)
Collector - Emit ter voltage : VCE [ V ]
Ga te - Emitte r vo lta ge : VGE [ V ]
0 5 10 15 20 25 30 35
500
1000
5000
10000
50000
[ Inv e rter ]
Capaci tance vs. Colle ctor-Emitter voltage (ty p.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Co llecto r - Em itte r vo lta ge : V C E [ V ]
Coes
Cres
Cies
0 100 200 300 400 500 600
0
100
200
300
400
500
[ Inv e rter ]
Dynamic Gate charge (typ.)
Vcc=300V , Ic=100 A, Tj= 25°C
Ga te charge : Q g [ n C ]
Collector - Emit ter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR100SD060
0 50 100 150 200
10
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24 Ω , Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0 50 100 150 200
10
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg= 24Ω, Tj= 125°C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10 100 300
10
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
Ga te resista nce : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 50 100 150 200
0
2
4
6
8
10
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω
Switchin g loss : Eon , Eoff, Err [ m J/p ulse ]
Collector current : Ic [ A ]
10 100 300
0
5
10
15
20
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
Switchin g loss : Eon , Eoff, Err [ m J/p ulse ]
Ga te resista nce : Rg [ W ]
Eon
Err
Eoff
0 200 400 600 800
0
200
400
600
800
1000
1200
SCSOA
(n on-repe tit ive pu lse )
RBSOA
(Re p et itive p uls e)
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24Ω,Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR100SD060
0123
0
50
100
150
200
250
0.0 0.4 0.8 1.2 1.6 2.0
2
5
10
100
300
Tj=25°C
Tj=125°C
[ Inv e rter ]
Forward current vs. Forward on voltag e (typ.)
Forward cu rrent : IF [ A ]
Forward on voltage : VF [ V ]
0 50 100 150 200
5
10
100
300
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
[ Inv e rter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω
Forwa rd cu rre n t : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
50
100
150
200
250
Tj= 2 5° C Tj= 125°C
[ Con verter ]
Forward current vs. Forward on voltag e (typ.)
Forward on voltage : VFM [ V ]
Forward cu rrent : IF [ A ]
0.001 0.01 0.1 1
0.01
0.1
1
5
IGBT[Inverter]
Conv. Diode
T ransient thermal re sistance
Therm al resistanse : Rth(j-c) [ °C/W ]
Pu lse w idth : Pw [ sec ]
FWD[Inverter]
Thyristor
IGBT[Brake]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
T emperat ure characte ristic (typ.)
Temperature [ °C ]
Resistance : R [ kΩ ]
[ Thyri stor ]
On -state current vs. On -state voltage (typ.)
Tjw= 125°C Tjw= 25° C
Instan taneous on-state current [ A ]
Instantaneous on-state voltage [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR100SD060
012345
0
20
40
60
80
100
120
10V
12V
15VVGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
Collector current : Ic [ A ]
Collect or - Em itter v oltage : VCE [ V ]
012345
0
20
40
60
80
100
120
10V
12V
15V
VGE = 20V
[ Brake ]
Collector current vs. Collector-Emitter v o ltage
Tj= 125°C(typ.)
Collect or - Em itter v oltage : VCE [ V ]
Collector current : Ic [ A ]
01234
0
20
40
60
80
100
120
Tj = 2 5 °C Tj= 125°C
[ Brake ]
Collector current vs. Collector-Emitter v o ltage
VGE=1 5 V (t yp.)
Collect or - Em itter v oltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 25A
Ic= 50A
Ic=100A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
Collector - Em itter voltage : VCE [ V ]
Gate - Emitter volta ge : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
20000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collect or - Em itter v oltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 150 200 250 300
0
100
200
300
400
500
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25°C
Gate charge : Q g [ nC ]
Collector - Em itter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR100SD060
Outline Drawings, mm
Equivalent Circuit Schematic
Marking : White Marking : White
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brake ] [ Inverter ] [ T hermistor ]
14(Gb)
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brake ] [ Inverter ] [ T hermistor ]
14(Gb)
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
