T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 1 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
Qualified Levels:
JAN, JAN TX, and
JANTXV
DESCRIPTION
Th is fa mily of 2N6764, 2N 6 766, 2N 6 76 8 an d 2N6770 switching transistors are mili tary
qualified up to the JANTXV level for high-reliability applications . These devices ar e also
avai lable i n a th r u hole TO-254AA leaded package. Microsemi al so offers n umerous oth er
t r ans i stor products to meet h igher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
TO-204AE (TO-3)
Package
Also available in:
TO-254AA package
(leaded)
2N6764T1 & 2N6770T1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
• RoHS com pliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Low-profile meta l can design.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 ºC un less otherwise stat ed
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Junction & Stor age Temperature Range
T
J
&
Tstg
-55 to +150 °C
Thermal Resistance Junction-to-Case
RӨJC
0.83
oC/W
Total Power Dissipation
A
(1)
PT
4
150
W
Drain-Source Voltage, dc
2N6766
2N6768
VDS
100
200
400
500
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID1
38.0
30.0
14.0
12.0
A
Drain Current, dc @ T
C
= +100 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID2
24.0
19.0
9.0
7.75
A
Off-State Current (Peak Total Value)
(3)
2N6764
2N6766
2N6768
2N6770
IDM
152
120
56
48
A (pk)
Source Current 2N6764
2N6766
2N6768
2N6770
IS
38.0
30.0
14.0
12.0
A
Notes featured on next page.
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 2 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
NOTES: 1. Derat e li ne ar ly by 1.2 W/ºC for TC > +25 ºC.
2. The following formula derives the maximu m theoretical ID limit. ID is l imited by package and internal wires and may also be limit ed by
pin diameter:
3. IDM = 4 x ID1 as calculated in note 2.
M ECHANICAL and PACKAGING
• CASE: TO-3 metal can.
• TERMINALS: S older dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin pl ating is also available on
commercial grade only.
• MARKING: Manufacturer's ID, part number, date code.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6764 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
di/dt
Rate o f chan ge of diode current while in reverse-recover y mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 3 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
ELECTRI CAL CHARACTERISTICS @ TA = +2 5 ° C , u nless other wis e noted
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S ource Br eakdown Voltag e
VGS = 0 V, ID = 1.0 mA
2N6764
2N6766
2N6768
2N6770
V(BR)DSS
100
200
400
500
V
Gate-Source Vol tage (Threshold)
VDS ≥ VGS, ID = 0 .2 5 mA
VDS ≥ VGS, ID = 0 .2 5 mA, TJ = +125 °C
VDS ≥ VGS, ID = 0 .2 5 mA, TJ = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
G ate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V , TJ = +125 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 16 0 V
VGS = 0 V, VDS = 32 0 V
VGS = 0 V, VDS = 40 0 V
2N6764
2N6766
2N6768
2N6770
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 100 V, TJ = + 125 °C
VGS = 0 V, VDS = 200 V, TJ = + 125 °C
VGS = 0 V , VDS = 400 V, T J = +125 °C
VGS = 0 V, VDS = 500 V, TJ = + 125 °C
2N6764
2N6766
2N6768
2N6770
IDSS2
1.0
mA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = + 125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = + 125 °C
2N6764
2N6766
2N6768
2N6770
IDSS3
0.25
mA
Static Drain -Sou r ce On-St ate Res ist anc e
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9. 0 A pul s e d
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)1
0.055
0.085
0.3
0.4
Ω
Static Drain -Sou r ce On-St ate Res ist anc e
VGS = 10 V, ID = 38.0 A pulsed
VGS = 10 V, ID = 30.0 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)2
0.065
0.09
0.4
0.5
Ω
Static Drain -Sou r ce On-St ate Res ist anc e
TJ = +125 °C
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9. 0 A pul s e d
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)3
0.094
0.153
0.66
0.88
Ω
Diode F orwar d Volt age
VGS = 0 V, ID = 38.0 A pulsed
VGS = 0 V, ID = 30.0 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
VGS = 0 V, ID = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
VSD
1.9
1.9
1.7
1.7
V
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 4 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
ELECTRI CAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTE RISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
G ate Charge:
On-State Gate Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A , VDS = 200 V
V
GS
= 10 V, I
D
= 12.0 A, V
DS
= 250 V
2N6764
2N6766
2N6768
2N6770
Qg(on)
125
115
110
120
nC
G ate t o Source C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qgs
22
22
18
19
nC
G ate t o D r ain C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qgd
65
60
65
70
nC
SW ITCHING CHARACTE RISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay tim e
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
, VDD = 250 V
2N6764
2N6766
2N6768
2N6770
td(on)
35
ns
Rise time
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 1 0 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
, VDD = 250 V
2N6764
2N6766
2N6768
2N6770
tr
190
ns
Turn-off delay time
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 10 V , RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
, VDD = 250 V
2N6764
2N6766
2N6768
2N6770
td(off)
170
ns
Fall time
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 1 0 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
, VDD = 250 V
2N6764
2N6766
2N6768
2N6770
tf
130
ns
Diode Reverse Recovery Ti me
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 38.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 30.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 14.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 12.0 A
2N6764
2N6766
2N6768
2N6770
trr
500
950
1200
1600
ns
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 5 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
GRAPHS
t1, Rectangle P ulse Duration ( seconds)
FIGURE 1
Thermal Respon se Curves
Thermal Response (ZθJC)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 6 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC) TC CASE TE MPERA TURE (ºC)
For 2N67 64 For 2N67 66
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
F or 2N6768 For 2N6770
I
D
DRAIN CURRE NT (AMPERES)
ID DRAIN CURRE NT (AMPERES)
I
D
DRAIN CURRE NT (AMPERES)
I
D
DRAIN CURRE NT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 7 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766
ID, DRAIN CURRENT (AMPERES) ID, DRA IN CURRENT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 8 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768
VDS, DRAIN-TO-SOURC E VO LTAGE ( VOLTS) for 2N6770
ID DRAIN CURRE NT (AMPERES)
ID DRAIN CURRE NT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 9 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
PACKAGE DIM ENSIONS
NOTE:
1. Dimensions ar e in i nch es.
2. Millimet er s are gi ven for general i nf or mation on ly.
3. These dimensions should be measured at points .050
inch (1.27 mm) and .055 inch (1.40 mm) below the
se a ti ng pla ne . When ga uge is no t use d me asur e me nt
will be m ade at the seating plane.
4. The s eating plane of t he header sh all b e fl at within
.001 inch (0.03 mm ) concave to .004 inch (0.10 mm )
conve x insi de a .930 inch (2 3.62 mm) diameter circl e
on the center of t he head er and flat within .001 inch
(0.03 mm ) concave to .006 inch (0.15 mm) convex
overall.
5. Thes e dimensi ons pertain to the 2N67 64 and 2N6766
types.
6. Th ese d im ens i ons pertain to the 2N6768 and 2N6770
types.
7. M ounti ng holes shall be deburred on the seati ng plane side.
8. Drain i s elec trically connected to the case.
9. In ac cordance with ASME Y14.5M, diameters are equivalent t o Φx symbology.
SCHEMATIC
DIM
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
-
0.875
-
22.23
B
0.060
0.135
1.52
3.43
C
0.250
0.360
6.35
9.15
D
0.312
0.500
7.92
12.70
D2
-
0.050
-
1.27
(3)
E
0.057
0.038
0.063
0.043
1.45
0.97
1.60
1.10
DIA. (5 )
DIA. (6)
F
0.131
0.188
3.33
4.78
Radius
G
1.177
1.197
29.90
30.40
H
0.655
0.675
16.64
17.15
J
0.205
0.225
5.21
5.72
K
0.420
0.440
10.67
11.18
L
0.495
0.525
12.57
13.3
Radius
M
0.151
0.161
3.84
4.09
DIA. (7)