Data Sheet
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Ú2/(-#O,TD!LLRIGHTSRESERVED
Super Fast Recovery Diode
RFUH10TB4S
zSerise zDimensions(Unit : mm) zStructure
Super Fast Recovery
zApplications
General rectification
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zAbsolute Maximum Ratings (Tc=25°C)
Symbol Unit
VRM V
VRV
Io A
IFSM A
Tj °C
Tstg °C
zElectrical Characteristics(Tj=25°C)
Symbol Unit
Forward voltage
VFV
Reverse current
IRμA
Reverse recovery time trr ns
Thermal resistance Rth(j-c) °C/W
Parameter
Conditions
Limits
Repetitive peak reverse voltage
Duty䍺0.5 430
Reverse voltage
Direct voltage 430
Average rectified foward current
60Hz half sin wave , Resistive load
Tc=90°C
10
Forward current surge peak
60Hz half sin wave , Non-repetitive at Tj=25°C
80
Junction temperature
150
Storage temperature
55 to 150
Parameter
Conditions
Min.
Typ.
Max.
IF=10A 䠉1.4 1.7
VR=430V
䠉
0.05
10
IF=0.5A,IR=1A,Irr=0.25×IR䠉15
25
Junction to case 䠉䠉
3.0
ձ Manufacture Year Week
ROHM : TO220FN
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FUH10T
B4S ձ
2.54d0.5
2.54d0.5
1/4
㻌 2012.06 - Rev.A
Not Recommended for
New Designs
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RFUH10TB4S
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(A)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
0.1
1
10
100
0500 1000 1500 2000 2500
Tj=125°C
Tj=150°C
Tj=25°C
Tj=75°C
1
10
100
1000
10000
100000
050 100 150 200 250 300 350 400 450
Tj=125°C
Tj=25°C
Tj=150°C
Tj=75°C
1
10
100
1000
0 5 10 15 20 25 30
f=1MHz
1300
1310
1320
1330
1340
1350
1360
1370
1380
1390
1400
1410
1420
1430
1440
1450
AVE:1371mV
IF=10A
Tj=25°C
1
10
100
1000
VR=430V
Tj=25°C
AVE:17.6nA
100
110
120
130
140
150
160
170
180
190
200
f=1MHz
VR=0V
Tj=25°C
AVE:150pF
2/4 2012.06 - Rev.A
Not Recommended for
New Designs
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RFUH10TB4S
IFSM DISPERSION MAP
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
trr DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
ESD DISPERSION MAP TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
60
80
100
120
140
160
180
200
AVE:148A
0
5
10
15
20
25
30
IF=0.5A
IR=1.0A
Irr=0.25×IR
Tj=25°C
AVE:15.1ns
1
10
100
1000
110 100
1
10
100
1000
110 100
0
1
2
3
4
5
C=200pF
R=0Ω C=100pF
R=1.5kΩ
AVE:0.54kV
AVE:2.68kV
0.1
1
10
100
0.001 0.1 10 1000
Rth(j-c)
Rth(j-a)
1cyc.
8.3ms
IFSM 8.3ms
8.3ms
IFSM
1cyc.
time
IFSM
3/4 2012.06 - Rev.A
Not Recommended for
New Designs
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RFUH10TB4S
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
0
2
4
6
8
10
12
14
16
18
030 60 90 120 150
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
0
5
10
15
20
25
30
35
0 2 4 6 8 10 12 14 16 18
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
0
2
4
6
8
10
12
14
16
18
030 60 90 120 150
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
T Tj=150°C
D=t/T
t VR
Io
VR=430V
0A
0V
T Tj=150°C
D=t/T
t VR
Io
VR=430V
0A
0V
4/4 2012.06 - Rev.A
Not Recommended for
New Designs
Datasheet
Datasheet
Notice-PGA-E Rev.001
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Precaution for Mounting / Circuit board design
1. When a highl y active halog enous (chlor ine, bromine, etc.) flux is used, the residue of flux ma y negatively affect product
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please consult with the ROHM represe ntative in advance.
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Not Recommended for
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Datasheet
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
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