c SOLID STATE DEVICES INC T-33-)|7 12E D paseeo21 0002124 oO i ~2N6192 AND 2N6 193 ~ 3S AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS SSDIl 14830 Valley View Avenue La Mirada. California 90638 (213) 921-9660 TWX 910-583-4807 - FAX 213-921-2396 CASE STYLE W JEDEC TO-5 330 320 (ere stenns l . NS PLE MAXIMUM RATINGS FEATURES RADIATION TOLERANT FAST SWITCHING, 100 NSEC MAX td HIGH FREQUENCY, TYPICAL ,, 100 -MZH BVCEO 100 VOLTS MIN T- HIGH LINEAR GAIN, LOW SATURATION VOLTAGE . 200C OPERATING, GOLD EUTECTIC DIE ATTACH DESIGNED FOR COMPLEMENTARY USE WITH 2N5338 AND 2N5339 2N6190 AND 2N6191 ALSO AVAILABLE | Rating Symbol Value Unit Collector - Emitter Voltage Vee Valts ; 100 Collector - Base Voltage Vego 100 Volts Emitter - Base Voltage Vego 6 Volts Collector Current le 5 Amps Base Current lp 1 Amps Total Device Dissipation @ TC = 25 C Py 10 Watts Derate above 25 C 57.1 mW/C Operating and Storage Temperature Tj, Tstg ~65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction to Case ReJC 17.5 CW ELECTRICAL CHARACTERISTICS . Characteristics Symbol Min. Max. Unit Collector - Emitter Breakdown Voltage* - (Ig= 50 m Adc} BVceo* 100 - Vde Collector - Base Breakdown Voltage . ; _ Vde (ig= 200s wade) 8VcB0 100 a - Emitter - Base Breakdown Voltage . . . (Ig = 200 uAdc) ~ 8VEg9 ~ Vie 1/85 B178I NOTE: All specifications subject to change without notice. 7SOLID STATE DEVICES INC / ~33-/97 1e2E D Bp ssbLo11 O00e12e5 2 i ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector Cutoff Current (VCE = 90 Vdc) 100 uAdc (VCE = 90 Vde, VEB= 1.5 Vdc) 10 uAdc (VCE = 90 Vdc, VEB= 1.5 Vde, TC= 150C) 1,0 mAdc Collector Cutoff Current cg = 100 Vda ogo 10 uAdc Emitter Cutoff Current (Veg= 6 Vde ) 'rBo 100 u Adc DC Current Gain 2N6192 30 = de. Ver = 2 FI 2N6193 60 (lg = 500 mAdc, Vcg Vdc) 2N6192 Dees 30 120 (lp = 2 Adc, Vop= 2 Vde) 2N6193 60 240 = Ade, Vee = 2N6192 20 (c= 9 Mees 2 3N6193 40 Collector - Emitter Saturation Voltage* (Ip = 2 Ade, Ip = 200 made) Vog. (san 0.7 Vdc (Ig = 5 Adc,lg = 500 mAdc) 1.2 Base - Emitter Saturation Voltage (lg = 2 Adc, tg = 200 = mAdc) Vpe (sani: 1.2 Vde (Ip = 5 Adc, Ig = 500 mAdc) 1.8 Current - Gain - Bandwith Product t 4 lg= 500 mAdc Vop= 10 vuct= 10 Mix) T 30 Mi Output Capacitance og = 10 Vic, lg=0.f= 100 Kha) Cob 300 pf Input Capacitance (Vpe= 2 Vde.tg=9,.f = 100 Ky) ip 1250 Hf Delay Time (Veo = 40 Vde. ta 100 ns Rise Time Ig = 2.0 Ade, t 100 ns Storage Time Vep(Off) = 3.0 Vdc, ts. 2.0 us Fall Time Ig = Iga = 200 mAde) ty 200 ns *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CURVE) 0 CURVES APPLY BELOW RATED Vero T.* 25 DISSIPATION DERATING CURVE Pp. POWER DISSIPATION (WATTS) 120 Tc, CASE TEMPERATURE (C) 5 2 at 005 Ic, COLLECTOR CURRENT (AMP) 002 de 50 ms Ty ae SECOND BREAXOOWN LIMITED oan BONOING WIRE LIMITED == THERMALLY LIMITED @T= 25C RATED Vceo 2N6190,2N6191 2N6192,2N6193 Vg. COLLECTOR EMITTER VOLTAGE (VOLTS! l SOLID STATE DEVICES, INC. P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 TWX 910-583-4807 FAX#213-921-2396ae oo Ts SOLID STATE DEVICES INC ze D ffazceo11 oooere. 4 ff T- 33-21 2N5003 AND 2N5005 S AMP 100 VOLTS HIGH SPEED PNP TRANSISTOR SSDI 14830 Valley View Avenue La Mirada, California90638 (213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE X JEDEC TO59 FEATURES ALL TERMINALS ISOLATED FROM CASE pets i 1 BL ase RADIATION TOLERANT | 4 f ae 4 | i FAST SWITCHING, TYPICAL 200 NSEC ton | BB By | | /'\ couse} HIGH FREQUENCY, TYPICAL f,, 100 MHZ | ih . @ BVCEO 80 VOLTS MIN , 00) 1 DN Tes HIGH LINEAR GAIN, LOW SATURATION VOLTAGE IUUGLNU | e [335 200C OPERATING, GOLD EUTECTIC DIE ATTACH 1022 Ne2A a _ DESIGNED FOR COMPLEMENTARY USE WITH THREAD emitter! 2N5002 AND 2N5004 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Vottage Vee 80 Volts Collector - Base Voltage Vogo 100 Voits Emitter - Base Voltage Veo 6 Volts Collector Current Ip 5 Amps Base Current . Ip 2 Amps Total Device Dissipation @ TC= 50C Py 50 Watts Derate above 50 C 333 mW/G Operating and Storage Temperature Tj, Tstg 165 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermat Resistance, Junction to Case R@JC 3.0 SCAN ELECTRICAL CHARACTERISTICS Characteristics Symbo! Min. Max. Unit Collector - Emitter Breakdown Voltage* (p= 100 made} BVceg: 80 Vde Collector - Base Breakdown Voltage Vde (p= 200 u Ade) 8YcB0 100 Emitter - Base Breakdown Voltage (Ip= 200 uAde BVEgo 6 Vde 1/85 B318H NOTE: All specifications subject to change without notice.SOLID STATE DEVICES INC J~33-Qy we dD PJaaceo11 oonz1e7 b i ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit _ Collector Cutoff Current I 500 Ad ) (VCE = 60 Vdc, VBE = 2 Vde, TC = 150C) - ToEV 50 nage | (VCE = 40 Vdc) CEO Collector Cutoff Current (VCE = 60 Vdc) Ios No wae (VCE = 100 Vdc) . Emitter Cutoff Current (WE = 5 Vde LERO 1.0 uAdc (VEB = 6 Vdc) 1.0 mAdc DC Current Gain* 2N5003 20 (ig = 50 mad. Vop= 5 Veo) 2N5005 30 {Ic = 5 Adc, Voce = 5 Vdc} 2N5005 70 200 = Adc, Voge = 2N5003 20 (p= > AdVce= > Vie) 2N5005 40 Collector - Emitter Saturation Voltage* - (lg = 2.5 Ade.lg= 250 made) Veg (sate 0.75 Vde (o= 3 Adetg = 500 mAac) 1.5 Base - Emitter Saturation Voltage (lp = 2.5 Ade,ig = 250 mAde) Vage (sat) 1.45 Vde (lp = 5 Ade,tg = 500 mAdc) 2,2 - Gain - Bandwith P . Current - Gain - Bandwith Product 2N5003 tr 60 M He (Ip = 500 mAdc Veg = 5 Vdc. f = 20 MHz) 2N5005 __ 70 Output Capacitance C ' (opp = 10 Vie tg = 0.4 = 1 Merz) ob 250 Pp . Base - Emitter Voltage* ~ 3 (Won = 5 Vde, Ig = 2.5 Adc) Vpg (ON)* 1.45 Vde Delay Time (Veg = 30 Vdc, ty Rise Time Ig = 5 Ade, (tow tr + 500 ns Storage Time Vep(Off)= 3.7 Vde, (t_--) tg. . Tpl = Ip2 = 500 mAdc, off + 1 Fall Time Ry,.= 6 Ohms) { 3 us *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES FORWARD BIAS DC SAFE OPERATION AREA (5.0.A. CURVE) DISSIPATION DERATING CURVE CURVES APPLY BELOW RATED Yoro To = 25 60 = 10 g 50 i 7 D-C Operation 5 4 Te < 25C ty I 3 ee 2 S ! 5 i . 3 $ 39 5 07 g ON Eos aN 8 5003 , 2N500 & : 0.2 20 + NI 5 Eo. E40 : % 0.07 = : q bo i 7, 0.04 | ~ 9.02 76 #100 126 150 175 200 3 , 0.01 , e fe | Te~Cese TemperatureC 4 7 #10 20 40 70 100 ) SOLID STATE DEVICES, INC. : P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 TWX 910-583-4807 * FAX#213-921-2396fe. aN L SOLID STATE DEVICES INC 12E D Baseto1 OooeL2a8 8 i T-33-4] 10 AMP 100 VOLTS 2N6188 AND 2N6189 HIGH SPEED PNP TRANSISTOR 14830 Valley View Avenue La Mirada. California 90638 (213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE X JEDEC TO59 ALL TERMINALS ISOLATED FROM CASE St 1g ---- be By ae , -4u8,, f {/ / F 1 / ( ! Ty 1.135 yy + 10-32 NF-2A THREAD EMITTERS MAXIMUM RATINGS FEATURES RADIATION TOLERANT FAST SWITCHING, 200 NSEC MAX ton HIGH FREQUENCY, TYPICAL fo 100 MHZ BVCEO 100 VOLTS MIN HIGH LINEAR GAIN, LOW SATURATION VOLTAGE 200 OPERATING, GOLD EUTECTIC DIE ATTACH DESIGNED FOR COMPLEMENTARY USE WITH 2N5659 Rating Symbol Value Unit Collector - Emitter Voltage VcEo Volts 100 Collector - Base Voltage Vego 100 Volts Emitter - Base Voltage Veno 6 Valts Collector Current ip 10 Amps Base Current Ip 2 Amps Total Device Dissipation @ TC = 25 C Py 60 Watts Derate above 25 C 343 mwic Operating and Storage Temperature Jj, Tstg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction to Case ROJG 2.91 C/W ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector - Emitter Breakdown Voltage* (ig= 50 ~ mAcel BVceo: 100 Vde Collector - Base Breakdown Voltage Vdc (Ig= 200 uAde) BVcg0 100 Emitter - Base Breakdown Voltage (Ip = 200 uAdc) BVeg9 6 Vde 1/85 B318J NOTE: All specifications subject to change without notice.SOLID STATE DEVICES INC ELECTRICAL CHARACTERISTICS T+33-2| bae Dd Pfs3e.021 oooe1es 7 i Characteristics Symbol Min. Max Unit Itector Cu i = : ones vce = 90 Vdc. VBE = 1,5 Vdc) TCEO 100 wade (VCE = 90 Vdc, VBE= 1.53-TC=150C) CEX 1.0 mAdc Collector Cutoff Current Veg =100 Vde ) lepo 10 Adc Emitter Cutoff Current | Vep= 6 Vde } E80 100 une DC Current Gaine 2N6188 30 p= 900 mite Mops 2 Mech oN6188 Nee 30 120 (lg = 2 Adc, Veg = 2 Vdc) 2N6189 60 240 (ig = 2 Ade. Vop= 2Vee) aaei Bo 20 Collector - Emitter Saturation Voltage* (lg = 2 Adclg= 200 mAde) Vog (san: 0.7 Vde (= 7 Adcig= 700 made) 1.2 Base - Emitter Saturation Voltage (ip = 2 Adc.lg= 200 = mAdc) Ve (sat 1.2 Vee (ig= 10 Adctg= 1 Adc) 2.0 Cutrent - Gain - Bandwith Product . (lp = 500 mAdc Veg = 10 voc.t= 10 = Mz) n 30 mtn Output Capacitance 1 (Wop 10 Wee. tg = 0.1 = 100 Khe) Cop 300 pf input Capacitance ~ 7 Vpe= 2 Vdc. Ip = 9.1 = 100 KHz) Cip 1250 pf DelayTime | Wgp= 40 Vee. tg 100 ns Rise Time Veep (Off) = 3.0 Vdc, too 100 ns Storage Time | I, = 2 Adc, ts. 2.0 us Fall Time Igy = Igo = 200 Adc) tt 200 ns *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES . DISSIPATION DERATING CURVE 60 a 40 ae E NY = = 40 S UN < a a 30 N 2 = 20 a 2 10 MS waa 8200 Tc, CASE TEMPERATURE (C) f SOLID STATE DEVICES, INC. FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CURVE) O. CURVES APPLY BELOW RATED Vero Ty *25 ) D-C Operation 40 IMaximum Coltector Current-A 0.2 G1 4 7 #10 20 40 7a 160 Voce Coilector-E miter Voltage+V P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 + TWX 910-583-4807 + FAX#213-921-2396 C) J)