FSBF5CH60BS - ON SEMICONDUCTOR

FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

June 2007

Motion-SPMTM

FSBF5CH60BS

Smart Power Module

Features

• UL Certified No.E209204(SPM27JA package)

• 600V-5A 3-phase IGBT inverter bridge including control ICs

for gate driving and protection

• Easy PCB layout due to built in bootstrap diode

• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC

• Isolation rating of 2500Vrms/min.

Applications

• AC 100V ~ 253V three-phase inverter drive for small power

ac motor drives

• Home appliances applications like air conditioner and wash-

ing machine

General Description

It is an advanced motion-smart power module (Motion-SPMTM)

that Fairchild has newly developed and designed to provide

very compact and high performance ac motor drives mainly tar-

geting low-power inverter-driven application like air conditioner

and washing machine. It combines optimized circuit protection

and drive matched to low-loss IGBTs. System reliability is fur-

ther enhanced by the integrated under-voltage lock-out and

short-circuit protection. The high speed built-in HVIC provides

opto-coupler-less single-supply IGBT gate driving capability that

further reduce the overall size of the inverter system design.

Each phase current of inverter can be monitored separately due

to the divided negative dc terminals.

Figure 1.

44mm

26.8mm

Top View Bottom View

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Integrated Power Functions

• 600V-5A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

Note) Available bootstrap circuit example is given in Figures 11 and 12.

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to UV (Low-side supply) and SC faults

• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Figure 2.

Top View

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Pin Descriptions

Pin Number Pin Name Pin Description

CC Bias Voltage for IC and IGBTs Driving

2 COM Common Supply Ground

3IN

(UL) Signal Inp u t for Low-side U Phase

4IN

(VL) Signal Input for Low-side V Phase

5IN

(WL) Signal Input for Low-side W Phase

FO Fault Output

FOD Capacitor for Fault Output Duration Time Selection

SC Capacitor (Low-pass Filter) for Short-Current Detection Input

9IN

(UH) Signal Input for High-side U Phase

10 VCC Bias Voltage for IC and IGBTs Driving

11 VB(U) High-side Bias Voltage for U Phase IGBT Driving

12 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving

13 IN(VH) Signal Input for High-side V Phase

14 VCC Bias Voltage for IC and IGBTs Driving

15 VB(V) High-side Bias Voltage for V Phase IGBT Driving

16 VS(V) High-side Bias Voltage Ground for V Phase IGBT Driving

17 IN(WH) Signal Input for High-side W Phase

18 VCC Bias Voltage for IC and IGBTs Driving

19 VB(W) High-side Bias Voltage for W Phase IGBT Driving

20 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving

21 NUNegative DC–Link Input for U Phase

22 NVNegative DC–Link Input for V Phase

23 NWNegative DC–Link Input for W Phase

24 U Output for U Phase

25 V Output for V Phase

26 W Output for W Phase

27 P Positive DC–Link Input

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Internal Equivalent Circuit and Input/Output Pins

Note:

1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.

2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.

Figure 3.

COM

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (21)

NV (22)

NW (23)

U (24)

V (25)

W (26)

P (27)

(20) VS(W)

(19) VB(W)

(16) VS(V)

(15) VB(V)

(8) CSC

(7) CFOD

(6) VFO

(5) IN(WL)

(4) IN(VL)

(3) IN(UL)

(2) COM

(1) VCC

VCC

OUT

COM VS

OUT

COM

VCC

OUT

COM VS

(18) VCC

(17) IN(WH)

(14) VCC

(13) IN(VH)

(12) VS(U)

(11) VB(U)

(10) VCC

(9) IN(UH)

VSL

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 125°C).

Control Part

Total System

Thermal Resistance

Note:

2. For the me asurement point of case temperature(TC), please refer to Figure 2.

Symbol Parameter Conditions Rating Units

VPN Supply Voltage Applied between P- NU, NV, NW450 V

VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW500 V

VCES Collector-emitter Voltage 600 V

± ICEach IGBT Collector Current TC = 25°C 5 A

± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 10 A

PCCollector Dissipation TC = 25°C per One Chip 19 W

TJOperating Junction Temperature (Note 1) -40 ~ 150 °C

Symbol Parameter Conditions Rating Units

VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V

VBS High-side Control Bias

Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

20 V

VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),

IN(UL), IN(VL), IN(WL) - COM -0.3~17 V

VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V

IFO Fault Output Current Sink Current at VFO Pin 5 mA

VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

TJ(Driver IC) Operating Junction Temperature -40 ~ 150 °C

Symbol Parameter Conditions Rating Units

VPN(PROT) Self Protection Supply Voltage Limit

(Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V

TJ = 150°C, Non-repetitive, less than 2μs400 V

TCModule Case Operation Temperature -40°C≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C

TSTG Storage Temperature -40 ~ 150 °C

VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

Pins to heat sink plate 2500 Vrms

Symbol Parameter Conditions Min. Typ. Max. Units

Rth(j-c)Q Junction to Case Thermal

Resistance Inverter IGBT part (per 1/6 module) - - 6.3 °C/W

Rth(j-c)F Inverter FWD part (per 1/6 module) - - 6.5 °C/W

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching tim e of IGBT it self unde r the given ga te driving cond ition interna lly.

For the detailed information, please see Figure 4.

Control Part

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

Symbol Parameter Conditions Min. Typ. Max. Units

VCE(SAT) Collector-Emitter Saturation

Voltage VCC = VBS = 15V

VIN = 5V IC = 5A, TJ = 25°C - - 2.0 V

VFFWD Forward Voltage VIN = 0V IF = 5A, TJ = 25°C - - 2.1 V

HS tON Switching Times VPN = 300V, VCC = VBS = 15 V

IC = 5A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-0.75- μs

tC(ON) -0.15- μs

tOFF -0.60- μs

tC(OFF) -0.20- μs

trr -0.10- μs

LS tON VPN = 300V, VCC = VBS = 15 V

IC = 5A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-0.45- μs

tC(ON) -0.20- μs

tOFF -0.60- μs

tC(OFF) -0.20- μs

trr -0.10- μs

ICES Collector-Emitter

Leakage Current VCE = VCES --1mA

Symbol Parameter Conditions Min. Typ. Max. Units

IQCC Quiescent VCC Supply

Current VCC = 15V

IN(UH, VH, WH) = 0V

IN(UL, VL, WL) = 0V

VCC - COM - - 24 mA

IQBS Quiescent VBS Supply

Current VBS = 15V

IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -VS(V),

VB(W) - VS(W)

- - 500 μA

VBDF Bootstrap Diode Forward

Voltage IF = 0.1A, TC = 25°C - 1.0 - V

VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V

VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V

TSD Over-temperature protec-

tion Temperature at LVIC - 160 - °C

ΔTSD Over-temperature protec-

tion hysterisis Temperature at LVIC - 5 - °C

UVCCD Supply Circuit Under-

Voltage Protection Detection Level 10.7 11.9 13.0 V

UVCCR Reset Level 11.2 12.4 13.4 V

UVBSD Detection Level 10 11 12 V

UVBSR Reset Level 10.5 11.5 12.5 V

tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms

VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL),

IN(VL), IN(WL) - COM 2.8 - - V

VIN(OFF) OFF Threshold Voltage - - 0.8 V

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Figure 4. Switching Time Definition

Switching Loss (Typical)

Figure 5. Switching Loss Charac teristics

VCE IC

VIN

tON tC(ON)

VIN(ON) 10% IC10% VCE

90% IC

100% IC

trr

100% IC

VCE

VIN

tOFF tC(OFF)

VIN(OFF) 10% V CE 10% IC

(a) tu rn-on (b ) tu rn -of f

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

120

150

180

210

240

270

300 SWITCHING LOSS(ON) VS. COLLECTOR CURRENT

VCE=300V

VCC=15V

VIN=5V

TJ=25℃

TJ=150℃

SWITCHING LOSS, ESW(ON) [uJ]

COLLECTOR CURRENT, Ic [AMP ERE S ] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

100

120

140

160

180

200 SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT

VCE=300V

VCC=15V

VIN=5V

TJ=25℃

TJ=150℃

SWITCHING LOSS, ESW(OFF) [uJ]

COLLECTOR CURRENT, Ic [AMP ERE S ]

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Recommended Operating Conditions

Mechanical Characteristics and Ratings

Figure 6. Flatness Measurement Position

Package Marking and Ordering Information

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V

VCC Control Supply Voltage Applied between VCC - COM 13.5 15 16.5 V

VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

13.0 15 18.5 V

dVCC/dt,

dVBS/dt Control supply variation -1 - 1 V/μs

tdead Blanking Time for Preventing

Arm-short For Each Input Signal 1.5 - - μs

fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz

VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM

(Including surge voltage) -4 4 V

Parameter Conditions Limits Units

Min. Typ. Max.

Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 1.00 N•m

Device Flatness Note Figure 6 0 - +120 μm

Weight - 15.4 - g

Device Marking Device Package Reel Size Tape Width Quantity

FSBF5CH60BS FSBF5CH60BS SPM27-JA - - 10

( + )

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Time Charts of SPMs Protective Function

a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UVCCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UVCCR).

a7 : Normal operation: IGBT ON and carrying current.

Figure 7. Under-Voltage Protection (Low-side)

b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UVBSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UVBSR)

b6 : Normal operation: IGBT ON and carrying current

Figure 8. Under-Voltage Protection (High-side)

Input Signal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVCCR

Protection

Circuit State SET RESET

UVCCD

a1 a3

a2 a4

Input Signal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVBSR

Protection

Circuit State SET RESET

UVBSD

b1 b3

b2 b4 b6

High-level (no fault output)

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.

c6 : Input “L” : IGBT OFF state.

c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c8 : IGBT OFF state

Figure 9. Short-Circuit Current Protection (Low-side Operation only)

Internal IGBT

Gate-Emitter Voltage

Lower arms

control input

Output Current

Sensing Voltage

of the shunt

resistance

Fault Output Signal

SC Reference Voltage

CR circuit time

constant delay

Protection

circuit state SET RESET

c6 c7

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Note:

1) RC coupling at each input might cha nge dep ending on the PW M contro l scheme use d in the applicatio n and the wiring im pedance of the application’ s pr inted circuit bo ard. The

SPM input signal sect ion integr ates 5k Ω (typ.) pull-down r esistor. Therefore, when using an extern al filtering re sistor, please p ay attentio n to the signal volt age dr op at inpu t ter-

minal.

2) The logic input is compatible with standard CMOS or LSTTL outputs.

Figure 10. Recommended CPU I/O Interface Circuit

Note:

1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.

Figure 11. Recommended Bootstrap Operation Circuit and Parame ters

CPU

COM

5V-Line

IN(UL) IN(VL) IN(WL)

IN(UH) IN(VH) IN(WH)

VFO

1nF

SPM

CPF= 1nF

RPF=4.7㏀

100Ω

1nF 1nF

100Ω

15V-Line 22uF 0.1uF

1000uF 1uF

One-Leg Diagram of SPM

Inverter

Output

These Values depend on PWM Control Algorithm

Vcc

COM

Vcc

COM

OUT

VSL

20Ω

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an ap plication specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3) VFO output is open collector type. This sign al line should be pulled up to the positive sid e of the 5 V power supp ly with appr oximately 4. 7kΩ resista nce. Please refer to Figure10.

4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.

5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms

(typ.)) Please refer to the note 5 for calculation method.

6) Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of

input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100Ω, CPS=1nF)

7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.

8) In the short-circ uit protection circuit, please select the RFCSC time constant in the range 1.5~2μs.

9) Each ca pacitor should be mounted as close to the pins of the SPM as possible.

10) To pr event su rge destru ction, the wiri ng betwee n the smoo thing capacitor an d the P&GN D pins sh ould be as short as possibl e. The use of a high frequency non-inductive

capacitor of around 0.1~0.22 μF between the P&GND pins is recommended.

11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible.

Figure 12. Typical Application Circuit

Fault

15V line

CBS CBSC

CSP15 CSPC15

CFOD

5V line

RPF

CBPF

Vdc

CDCS

Gatin g U H

Gati ng V H

Gati ng WH

Gating WL

Gatin g V L

Gating UL

CPF

RFU

RFV

RFW

RSU

RSV

RSW

CFU

CFV

CFW

W -Phase Current

V-Phase Current

U-Phase Current

COM

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (21)

NV (22)

NW (23)

U (24)

V (25)

W (26)

P (27)

(20) VS(W)

(19) VB(W)

(16) VS(V)

(15) VB(V)

(8) CSC

(7) C FOD

(6) V FO

(5) IN(WL)

(4) IN (VL)

(3) IN(UL)

(2) COM

(1) V CC

VCC

OUT

COM VS

OUT

COM

VCC

OUT

COM VS

(18) VCC

(17) IN(WH)

(14) VCC

(13) IN(VH)

(12) VS(U)

(11) VB(U)

(10) VCC

(9) IN(UH)

Input Signal for

Short-Circuit Protection

CSC

VSL

CPS

CPS CPS CPS

RBS

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Detailed Package Outline Drawings

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Detailed Package Outline Drawings (Continued)

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FSBF5CH60BS Rev. C

FSBF5CH60BS Smart Power Module - For Samsung

Detailed Package Outline Drawings (Continued)

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

™

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

UHC®

UniFET™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I29