VRRM = IF = 2500 V 2000 A ABB StakPak H Series Press-pack Diode 5SKF 20H2500 Doc. No. 5SYB 0117-02 May. 04 * High SOA * High tolerance to uneven mounting pressure * Suitable for series connection * Explosion resistant package * Modular design concept, available for a wide range of current ratings Maximum Rated Values1) Parameter2) Collector-emitter voltage Symbol Conditions min VRRM Unit 2500 V 2000 A 4000 A 23 kA DC forward current IF Repetitive peak forward current IFM Surge current IFSM Junction temperature Tvj 5 125 C Storage temperature Tstg -40 70 C FM 30 70 kN Mounting force 2) Tc = 75 C max VR = 0 V, tp = 10 ms, Tvj = 125 C, half-sinewave 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9 2) For detailed mounting instructions refer to ABB document no. 5SYA 2037-02 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SKF 20H2500 Diode Characteristic Values3) Parameter Symbol Repetitive peak reverse current IRRM VR = VRRM VF IF = 2000 A Peak forward recovery voltage VFR dI/dt = 3000 A/s Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery energy min typ max Unit 54 mA Tvj = 125C Forward voltage Reverse recovery current 3) Conditions VCC = 1250 V, IF = 2000 A, dI/dt = 3000 A/s, L = 200 nH inductive load Erec Tvj = 25C 1.95 2.20 V Tvj = 125C 1.90 2.20 V Tvj = 125C 60 V Tvj = 25C 1100 A Tvj = 125C 1600 A Tvj = 25C 1000 C Tvj = 125C 1900 C Tvj = 25C 1.7 s Tvj = 125C 1.8 s Tvj = 25C 0.9 J Tvj = 125C 1.7 J Characteristic values according to IEC 60747-2 Thermal Properties Parameter Symbol Thermal resistance junction to case Rth(j-c) Thermal resistance case to heatsink Rth(c-h) Operating junction temperature Tvjop Conditions min typ max Unit 11 K/kW 2 K/kW 125 C max Unit Heatsink flatness : Complete module area < 100 m Each submodule area < 50 m Roughness : < 6.3 m 5 Mechanical Properties Parameter Dimensions Symbol L* W* H Conditions Typical , see outline drawing min typ 236*150*26 mm Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm Weight 1.7 kg ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYB 0117-02 May. 04 page 2 of 5 5SKF 20H2500 Electrical configuration Cathode Anode Aux. Anode Outline drawing StakPak H2 This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYB 0117-02 May. 04 page 3 of 5 5SKF 20H2500 IF [A] VFR [V] 4000 25 C 125 C 3000 2000 1000 0 1.0 1.5 2.0 2.5 VF [V] Fig. 1 Typical diode on-state characteristics Erec [J] Irr, Qrr [A, C] 3000 3.0 Fig. 2 Typical forward recovery voltage versus di/dt Erec [J] Irr, Qrr [A, C] 2500 2.0 Erec 2500 2.5 Qrr Erec 2000 2000 2.0 1.6 Qrr 1500 1.2 Irr 1500 1.5 1000 1.0 Irr 1000 VCC = 1250 V diF/dt = 3000 A/s 500 0.5 0.8 VCC = 1250 V 500 Tvj = 125C Tvj = 125C 0 0 800 1600 2400 3200 0 1000 0.0 4000 1500 2000 2500 Typical diode reverse recovery characteristics versus forward current 3000 0.0 3500 diF/dt [A/s] IF [A] Fig. 3 0.4 IF = 2000 A Fig. 4 Typical diode reverse recovery characteristics versus dI/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYB 0117-02 May. 04 page 4 of 5 ABB Semiconductors AG 5SKF 20H2500 Analytical function for transient thermal impedance: ZthIC [K/kW] 2 n Zth (j - c)(t) = Ri(1 - e - t/ i ) 1 10 9 8 7 6 i =1 5 4 3 2 1009 8 7 i 1 2 3 4 Ri(K/kW) 4.568 4.615 0.944 0.803 i(ms) 580.8 53.11 3.286 0.609 6 5 4 Fm = 30...70 kN 3 Double Side Cooling 2 10-3 Fig.4 2 3 4 5 6 7 89 10-2 2 3 4 5 6 7 89 10-1 2 3 4 5 6 7 89 100 2 3 4 5 6 7 89 101 t [s] Maximum thermal impedance of the diode versus time Environmental class according to IEC 60721 Mode Class Document - no. Storage IE 11 5 SZK 9101-01 Transportation IE 23 5 SZK 9102-01 Operation IE 33 5 SZK 9103-01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors Doc. No. 5SYB 0117-02 May. 04