IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features * 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Information PART NUMBER File Number * rDS(ON) = 0.270 * SOA is Power Dissipation Limited * Single Pulse Avalanche Energy Rated * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol PACKAGE BRAND D IRF520 TO-220AB IRF520 NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-172 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 IRF520 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF520 UNITS 100 100 9.2 6.5 37 20 60 0.4 36 -55 to 175 V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 10) 100 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = 95V, VGS = 0V - - 250 A VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC - - 1000 A VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 9.2 - - A - - 100 nA - 0.25 0.27 2.7 4.1 - S VGS = 20V ID = 5.6A, VGS = 10V (Figure 8, 9) VDS 50V, ID = 5.6A (Figure 12) VDD = 50V, ID 9.2A, RG = 18, RL = 5.5 MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD VGS = 10V, ID = 9.2A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Contact Screw On Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA 4-173 Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Free Air Operation Modified MOSFET Symbol Showing the Internal Devices Inductances D - 9 13 ns - 30 63 ns - 18 70 ns - 20 59 ns - 10 30 nC - 2.5 - nC - 2.5 - nC - 350 - pF - 130 - pF - 25 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 2.5 oC/W - - 80 oC/W LD G LS S IRF520 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN TYP MAX UNITS - - 9.2 A - - 37 A G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time Reverse Recovered Charge TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) - - 2.5 V trr TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/s 5.5 100 240 ns QRR TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/s 0.17 0.5 1.1 C NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 640mH, RG = 25, peak IAS = 9.2A. Unless Otherwise Specified 10 1.0 8 ID, DRAIN CURRENT (A) 1.2 0.8 0.6 0.4 6 4 2 0.2 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 0 150 175 0 25 50 75 125 100 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER Typical Performance Curves 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-2 10-3 0.1 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-174 1 10 IRF520 Typical Performance Curves Unless Otherwise Specified (Continued) 15 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10s 100s 10 1ms 0.1 10ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 1 10V 12 VGS = 7V 9 VGS = 6V 6 VGS = 5V 3 VGS = 4V 0 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 30 10 40 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 8V 12 VGS = 7V 9 VGS = 6V 6 3 VGS = 5V VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 VDS 50V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10 1 175oC 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 2.5 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE 25oC 0.1 5 FIGURE 6. SATURATION CHARACTERISTICS 2.0 1.5 VGS = 10V 1.0 50 FIGURE 5. OUTPUT CHARACTERISTICS ID(ON), ON-STATE DRAIN CURRENT (A) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 8V 0.5 2.4 ID = 9.2A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.8 1.2 0.6 VGS = 20V 0 0 8 16 24 ID, DRAIN CURRENT (A) 32 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-175 40 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF520 Typical Performance Curves Unless Otherwise Specified (Continued) 1000 1.25 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.15 800 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.05 0.95 600 0.85 0.75 -60 60 0 120 400 CISS 200 COSS 0 180 CRSS TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) 100 TJ = 25oC 3 TJ = 175oC 2 1 VDS 50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 0 3 6 9 ID, DRAIN CURRENT (A) 12 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10 TJ = 175oC 1 TJ = 25oC 0.1 0 15 0.4 0.8 ID = 9.2A VDS = 20V VDS = 50V VDS = 80V 16 12 8 4 0 3 6 9 12 15 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-176 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 5 4 102 10 1 2.0 IRF520 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-177 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF520 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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