Die no. C-22 NPN small signal transistor These are epitaxial planar NPN silicon transistors. Features Dimensions (Units : mm) SST3 2.940.2 * available in a SST3 (SST, SOT-23) Tes, package, see page 300 0S * collector-to-emitter breakdown Fl OE 9 voltage, BVcEo = 40 V (min) at il # Ilo =1.0mA oly | 4 * excellent gain linearity from 100 pA to a ots coset 100 mA TOP VIEW 0.49 e lownoise, NF = 2.0 dB (max) at = g (1) Emitter _ _ A-P-F ARPES (2) Base Ic = 100 HA, f = 10 Hz to 15.7 kHz a EJ = (3) Collector * high transistion frequency, typically, IF }.- fr = 300 MHz (min) at lo = 10 mA ona Device types . Package style Part number Part marking SST6838 RBR SST3 BC847B GIF (SOT-23) |BC848B GIK BC8&48C GIL Applications low noise, high gain, general purpose transistor Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcgo 70 Vv Collector-to-emitter voltage Vceo 40 V Emitter-to-base voltage VeBo 6 V Collector current lo 200 mA_ |Direct current (DC) Power dissipation Po 200 mW_ |For derating, see derating curve following Junction temperature Tj 55 ~ +150 C 342 RonmM Surface Mount TransistorsTransistors (US/European) NPN C-22 Electrical characteristics (unless otherwise noted, T,, = 25C) Parameter Symbol; Min |Typical| Max Unit Conditions Collector-to-base _ breakdown voltage BVcao | 70 Vi |ic = 50 HA Collector-to-emitter _ breakdown voltage BVceo | 40 V jlc=1.0mA Emitter-to-base = breakdown voltage BVEBo 6 Vjle=10HA Collector cutoff current logo 10 nA |Vcg=60V Emitter cutoff current lego 10 nA |Veg=5V 80 175 500 lo = 50 HA, Voe=5.0V 80 175 500 Io = 100 MA, Veg =5.0V 100 200 600 Ic = 500 MA, Vog = 5.0V DC current gain Nee 100 300 | 1000 Io = 1 MA, Voge = 5.0 V 100 300 | 1000 Ig = 10 MA, Voge = 5.0 V 100 250 800 Io =50 MA, Voe=5.0V Collector-to-emitter Vv 0.08 0.15 Vv Ic/lp = 10 mA/1.0mA saturation voltage CE (sal) 0.18 | 030 Io/lg = 50 mA/S.0 mA Base-to-emitter saturation | ,, 0.70 | 0.85 y__ [lela = 10. mA1.0 mA voltage BE (sat) 1.00 Ic/lg = 50 MA/S.0 mA AC current gain Ne 200 400 950 Io = 1.0 mA, Vog = 5.0 V, f= 1 kHz Collector output _ 7 _ capacitance Cob 2.5 3 PF [Veg =5.0V, Ie =0, f= 1 MHz Collector input _ nee capacitance Cip 8.5 10 pF |Veg =0.5 V, Io = 0, f= 1 MHz Transition frequency fr 300 MHz |Io=10mMA, Vog =5.0 V, f = 100 MHz Ic = 100 pA, VcE =5.0 Vv, 5 7 Rg = 10 kQ, f = 10 Hz, bandwidth = 1 Hz lo = 100 HA, Vce =50 V, 0.8 2 Rg = 10 kQ, f = 1 kHz, Noise figure NF dB |bandwidth = 1 Hz Io = 100 pA, Vog = 5.0 V, 0.8 2 Rg = 10 kQ, f= 10 kHz, bandwidth = 1 Hz 1 3 Ic= 100 BA, Voce =5.0 Vv, Rg = 10 kQ, f = 10 Hz to 15.7 kHz Surface Mount Transistors RONM 343C-22 Transistors (US/European) NPN Electrical characteristic curves Ory = 25C v2 So Tax 25C a oS oO a So o \o eo Yo a = oO _ Ip-COLLECTOR CURRENT (mA) eo - I-COLLECTOR CURRENT (mA) > i n 0 Ip = OmA ig=OyA a 1.0 2.0 0 1.0 2.0 Vce-COLLECTOR-EMITTER VOLTAGE (Y) Vce-COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Figure 2 Ta= 28C hee-DC CURRENT GAIN 0.1 1.0 10 400 1000 Ic-COLLECTOR CURRENT (mA) Figure 3 hpg-DC CURRENT GAIN 0.) 1.0 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 4 344 ROM Surface Mount TransistorsTransistors (US/European) NPN C-22 i000 hfe-AC CURRENT GAIN Ta=25C Voe=5V f= [kHz 0.0! 0.1 ! 10 100 c-COLLECTOR CURRENT (mA) Figure 5 o Ta=25C \e/Ip 10 Ta=25C IcIp= 10 o o o o t.0 10 100 VoggaryCOLLECTOR EMITTER SATURATION VOLTAGE(V) o a Vae(saty BASE EMITTER SATURATION VOLTAGE (V) _ 0.1 0 10 100 Ic-COLLECTOR CURRENT (mA) ic COLLECTOR CURRENT (mA) Figure 6 Figure 7 i, Ta= 25C Ta=25C a Vee =5V Ic/lg= 10 Zi. a : g 3 1.2 w iS = E z! & 0. z y 5 < an = F a > ! 0.) 1.0 10 100 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Io-COLLECTOR CURRENT (mA) Figure 8 Figure 9 Surface Mount Transistors ReumM 345C-22 Transistors (US/European) NPN z wd = - wt z S 1 1.0 10 100 ic-COLLECTOR CURRENT (mA) Figure 10 | Ta=25C Voc = 40 I= lig; = 10lep e tad = | = 4 < & 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Figure 12 Ta=25C Voce COLLECTOR-EMITTER VOLTAGE (V) 0.5 10 100 500 Ic-COLLECTOR CURRENT (mA) Figure 14 Ta=25C Ko = 101g; = 1Olp2 2 ad = - w | Z Ee n t 1.0 10 100 Ie-COLLECTOR CURRENT (mA) Figure 11 Ta=25C f= 1MHz & la z ' _ 3 I 05 6 10 50 REVERSE BIAS VOLTAGE (Vv) Figure 13 ' wT Ta=25C = Vce=5V = e z 1 3 z 3 & Bi 0.5 1.0 10 100 500 Ip-COLLECTOR CURRENT (mA) Figure 15 346 Surface Mount TransistorsTransistors (US/European) NPN C-22 s < = E 2 % q Fa] Z g 5 & hte 2 u le= Uma 4 e hie=7.8k0 2 a hie. Mo = 280 7 = hrex4.5X10 8 =7.5"5 01 1 10 100 0 25 50 75 100 125 150 Ie~COLLECTOR CURRENT (mA) T,-AMBIENT TEMPERATURE (C) Figure 16 Figure 17 12 Ta=25C Vee =5V 10 Ic= 100 4A = 10k Cy NF NOISE FIGURE (dB) ~~ an 10 100 Ik t t f-FREQUENCY (Hz) Figure 18 t { e @ Z g a % n i # 2 8 B 3 2 e 0.01 0.1 t 10 0.01 0.1 t 10 Ie-COLLECTOR CURRENT (mA) Ie-COLLECTOR CURRENT (mA) Figure 19 Figure 20 Surface Mount Transistors RBM 347C-22 Transistors (US/European) NPN = Ta=25C S Vee SV 8 f= (kHz < 3 # : e 0.901 | ' 10 Ic-COLLECTOR CURRENT (mA) Figure 21 120 100 z 3 & x 80 a a : 60 7 40 20 a 0 0 25 50 75 100 125 180 T, AMBIENT TEMPERATURE (C) Figure 23 Rg~SOURCE RESISTANCE (2) (00 0.0t 0.1 ! 10 Ip-COLLECTOR CURRENT (mA) Figure 22 348 Surface Mount Transistors