ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 70V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
28/11/08
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13°
Max
2.54 Dimensions in mm
LOW INPUT CURRENT
PHOTOTRANSIST OR
OPTICALLY COUPLED ISOLATORS
APPROVALS
zUL recognised, File No. E91231
Package Code " EE "
'X' SPECIFICATION APPROV ALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The SFH617A series of optically coupled isolators
consist of infrared light emitting diodes and NPN
silicon photo transistors in space efficient dual in line
plastic packages.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
zLow input current 1mA IF
zHigh Current Transfer Ratios (40-320% at
10mA, 13% min at 1mA)
zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
zHigh BVCEO (70V min)
zAll electrical parameters 100% tested
APPLICATIONS
zComputer terminals
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
5.08
4.08
SFH617A-1, SFH617A-2, SFH617A-3, SFH617A-4,
SFH617A-1X, SFH617A-2X, SFH617A-3X, SFH617A-4X
10.16
0.26
7.62
OPTION SM
SURFACE MOUNT OPTION G
10.46
9.86
0.6
0.1 1.25
0.75
DB92330
Input Forward Voltage (VF) 1.65 V IF = 50mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCEO)70 V I
C = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V I
E = 100μA
Collector-emitter Dark Current (ICEO)
SFH617A-1,2 50 nA VCE = 10V
SFH617A-3,4 100 nA
Coupled Current Transfer Ratio (CTR) (Note 2)
SFH617A-1 40 80 % 10mA IF , 5V VCE
SFH617A-2 63 125 %
SFH617A-3 100 200 %
SFH617A-4 160 320 %
SFH617A-1 13 % 1mA IF , 5V VCE
SFH617A-2 22 %
SFH617A-3 34 %
SFH617A-4 56 %
Collector-emitter Saturation Voltage VCESAT 0.4 V 10mA IF , 2.5mA IC
Input to Output Isolation Voltage V ISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Response Time (Rise), tr 4 μSV
CE = 2V , IC = 2mA
Response Time (Fall), tf 3 μSR
L = 100Ω
28/11/08
PARAMETER MIN TYP MAX UNITS TEST CONDITION
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92330
DB92330
28/11/08
50
Ambient temperature TA ( °C )
150
0
200
Collector power dissipation PC (mW)
Collector Power Dissipation vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 5V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Collector Current vs. Collector-emitter Voltage
( normalised to SFH617A-3 )
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
10
15
20
30
50
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 2.5mA
Ambient temperature TA ( °C )
IF = 5mA
0
80
120
160
200
240
40
280
320
Forward current IF (mA)
Current Transfer Ratio vs. Forward Current
Current transfer ratio CTR (%)
VCE = 5V
TA = 25°C
1 2 5 10 20 50
SFH617A-2
SFH617A-3
SFH617A-4
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current IF (mA)
SFH617A-1