SI4410DYTRPBF - INTERNATIONAL RECTIFIER

Parameter Max. Units

VDS Drain- Source Voltage 30 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±10

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±8.0 A

IDM Pulsed Drain Current ±50

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

EAS Single Pulse Avalanche Energy400 mJ

VGS Gate-to-Source Voltage ± 20 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

lN-Channel MOSFET

lLow On-Resistance

lLow Gate Charge

lSurface Mount

lLogic Level Drive

lLead-Free

09/22/04

Si4410DYPbF

HEXFET® Power MOSFET

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

This N-channel HEXFET® Power MOSFET is

produced using International Rectifier's advanced

HEXFET power MOSFET technology. The low on-

resistance and low gate charge inherent to this

technology make this device ideal for low voltage or

battery driven power conversion applications

The SO-8 package with copper leadframe offers

enhanced thermal characteristics that allow power

dissipation of greater that 800mW in typical board

mount applications.

Description

Absolute Maximum Ratings

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PD - 95168

SO-8

Top View

VDSS = 30V

RDS(on) = 0.0135Ω

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Diode Conduction)showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– 0.7 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V 

trr Reverse Recovery Time ––– 50 80 ns TJ = 25°C, IF = 2.3A

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

 

  50

2.3

 When mounted on FR4 Board, t ≤10 sec

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

––– 0.0100.0135 VGS = 10V, ID = 10A 

––– 0.015 0.020 VGS = 4.5V, ID = 5.0A 

VGS(th) Gate Threshold Voltage 1.0 –– – ––– V VDS = VGS, ID = 250µA

gfs Forward Transconductance ––– 35 ––– S VDS = 15V, ID = 10A

––– ––– 1.0 VDS = 30V, VGS = 0V

––– ––– 25 VDS = 30V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge –– – 30 45 ID = 10A

Qgs Gate-to-Source Charge ––– 5. 4 ––– nC VDS = 15V

Qgd Gate-to-Drain ("Miller") Charge ––– 6. 5 ––– VGS = 10V, See Fig. 10 

td(on) Turn-On Delay Time ––– 11 ––– VDD = 25V

trRise Time ––– 7. 7 – –– ID = 1.0A

td(off) Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω

tfFall Time ––– 44 ––– RD = 25Ω, 

Ciss Input Capacitance ––– 1585 ––– VGS = 0V

Coss Output Capacitance ––– 739 ––– pF VDS = 15V

Crss Reverse Transfer Capacitance ––– 106 ––– ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

 Starting TJ = 25°C, L = 8.0mH

RG = 25 Ω, IAS = 10A. (See Figure 15)

ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Si4410DYPbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100

20µs PU LSE WIDT H

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

11A

100

1000

4 8 12 16

T = 25°C

V , Gate-to-Source Vol t a ge (V)

I , Drain-to-Source Current (A)

V = 25V

20µs PULSE WIDTH

T = 150°C

T = -55°C

10A

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4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.4 0.5 0.6 0.7 0.8 0.9 1.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

1000

0.1 1 10 100 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

V , Drain-to-Source V oltage (V)

I , Drain Current (A)I , Drain Current (A)

10us

100us

1ms

10ms

010 20 30 40 50

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D10A

V = 15V

V = 24V

1 10 100

400

800

1200

1600

2000

2400

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1M Hz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

Si4410DYPbF

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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

I , Drain Current (A)

0.01

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. D u ty fa c to r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10. Typical Power Vs. Time

100

0.01 0.1 1 10 100

Power ( W)

Time (sec)

Si4410DYPbF

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Fig 12. Typical On-Resistance Vs. Drain

Current

Fig 13. Typical On-Resistance Vs. Gate

Voltage

0.00

0.04

0.08

0.12

0.16

0.20

01020304050

I , Drain Current (A)

R , Dr ain-to-Sou rce On Resistance

DS(on)

(Ω)

V = 10V

V = 4.5V

0.00

0.01

0.02

0.03

345678910

R , Drain -to-Source On Resistance

DS(on)

(Ω)

V , Gate-t o-Source Voltage (V)

I = 10A

Fig 14. Typical Threshold Voltage Vs.Temperature

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junc tion Temperature (°C)

GS(th)

V , Variance ( V)

I =250µA

Fig 15. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

4.5A

8.0A

10A

Si4410DYPbF

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [. 010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOT PRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUT LINE CONF ORMS TO JEDE C OUT LINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLIN G DIMENS ION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070

]

DATE CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WEEK

EXAMPLE: TH IS I S AN I RF7 101 (MOSFET)

P = DE SIGNATE S LEAD-FR EE

PR ODUCT (OP TIONAL )

A = ASS EMBLY S IT E CODE

Si4410DYPbF

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/04

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER .

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES:

. CONTROLLING DIMENSION : MILLIMETER.

. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

. OUTLINE CON F OR M S TO EIA-481 & EIA-541 .

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)