PD - 95168 Si4410DYPbF l l l l l l HEXFET(R) Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET(R) Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. A A D VDSS = 30V D D RDS(on) = 0.0135 D Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dv/dt EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 30 10 8.0 50 2.5 1.6 0.02 5.0 400 20 -55 to + 150 V W/C V/ns mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 09/22/04 Si4410DYPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.010 0.0135 VGS = 10V, ID = 10A 0.015 0.020 VGS = 4.5V, ID = 5.0A --- --- V VDS = VGS, ID = 250A 35 --- S VDS = 15V, ID = 10A --- 1.0 VDS = 30V, VGS = 0V A --- 25 VDS = 30V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 30 45 ID = 10A 5.4 --- nC VDS = 15V 6.5 --- VGS = 10V, See Fig. 10 11 --- VDD = 25V 7.7 --- ID = 1.0A ns 38 --- RG = 6.0 44 --- RD = 25, 1585 --- VGS = 0V 739 --- pF VDS = 15V 106 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units 2.3 50 --- --- 0.7 50 1.1 80 A V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec 2 Starting TJ = 25C, L = 8.0mH R G = 25, IAS = 10A. (See Figure 15) ISD 2.3A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C www.irf.com Si4410DYPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 100 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 4.5V 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C 100 V DS = 25V 20s PULSE WIDTH 8 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 10 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = -55C 20s PULSE WIDTH TJ = 150 C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 16 A 10A ID = 11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 Si4410DYPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2000 Ciss 1600 1200 Coss 800 400 20 VGS , Gate-to-Source Voltage (V) 2400 ID = 10A VDS = 24V VDS = 15V 16 12 8 4 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 100 40 50 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 100 TJ = 150 C TJ = 25 C 1 10us 100us 10 1ms 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 1.0 TC = 25 C TJ = 150 C Single Pulse 1 0.1 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Si4410DYPbF 8.0 80 Power ( W) 100 ID , Drain Current (A) 10.0 6.0 4.0 60 40 20 2.0 0.0 25 50 75 100 125 150 0 0.01 0.1 1 TC , Case Temperature ( C) 10 A 100 Time (sec) Fig 10. Typical Power Vs. Time Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.20 0.16 0.12 0.08 VGS = 10V VGS = 4.5V 0.04 0.00 A 0 10 20 30 40 50 R DS(on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance () Si4410DYPbF 0.03 0.02 I D = 10A 0.01 0.00 3 Fig 12. Typical On-Resistance Vs. Drain Current 7 8 9 1000 EAS , Single Pulse Avalanche Energy (mJ) V GS(th) , Variance ( V) 6 2.5 I D =250A 2.0 A -40 -20 0 20 40 60 80 10 A Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 100 120 140 160 TJ , Junction Temperature (C) Fig 14. Typical Threshold Voltage Vs.Temperature 6 5 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) 1.5 -60 4 TOP 800 BOTTOM ID 4.5A 8.0A 10A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 15. Maximum Avalanche Energy Vs. Drain Current www.irf.com Si4410DYPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H E 0.25 [.010] 1 2 3 A 4 e e1 MAX MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC .025 B AS IC C 1.27 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILL IME T E RS MIN e1 6X INCHES DIM B A1 8X L 8X c 7 C A B F OOT PRINT NOT E S : 1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIME NS ION: MILLIMET E R 3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONF ORMS T O JEDE C OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006]. 6 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010]. 6.46 [.255] 7 DIME NS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O A S U BS T RAT E . 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T ) INT E RNAT IONAL RE CT IF IE R LOGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL) Y = L AS T DIGIT OF T HE YE AR WW = WE E K A = AS S E MB L Y S IT E CODE L OT CODE PART NU MB E R www.irf.com 7 Si4410DYPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com