Vishay Siliconix
SiA456DJ
New Product
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
• Boost Converter for Portable Devices
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
200
1.38 at VGS = 4.5 V 2.6
5 nC
1.50 at VGS = 2.5 V 2.5
3.50 at VGS = 1.8 V 0.5
Marking Code
X X X
A G X
Lot Traceability
and Date code
Part # code
Ordering Information: SiA456DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
N-
C
hannel M
OS
FET
G
D
S
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
2.6
A
TC = 70 °C 2.1
TA = 25 °C 1.1b, c
TA = 70 °C 0.9b, c
Pulsed Drain Current IDM 2
Continuous Source-Drain Diode Current TC = 25 °C IS
3.6
TA = 25 °C 2.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
19
W
TC = 70 °C 12
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 28 36 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
Vishay Siliconix
SiA456DJ
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 V
VDS Temperature Coefficient ΔVDS/TJID = 250 µA 265 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ- 3.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.6 1.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 200 V, VGS = 0 V 1µA
VDS = 200 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) VDS ≥ 5 V, VGS = 4.5 V 2A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 0.75 A 1.08 1.38
Ω
VGS = 2.5 V, ID = 0.5 A 1.12 1.5
VGS = 1.8 V, ID = 0.1 A 1.2 3.5
Forward Transconductanceagfs VDS = 4 V, ID = 0.75 A 5S
Dynamicb
Input Capacitance Ciss
VDS = 100 V, VGS = 0 V, f = 1 MHz
350
pFOutput Capacitance Coss 12
Reverse Transfer Capacitance Crss 6
Total Gate Charge Qg VDS = 100 V, VGS = 10 V, ID = 1.1 A 9.5 14.5
nC
VDS = 100 V, VGS = 4.5 V, ID = 1.1 A
57.5
Gate-Source Charge Qgs 0.7
Gate-Drain Charge Qgd 1.7
Gate Resistance Rgf = 1 MHz 2 Ω
Tur n - O n D e l ay Time td(on)
VDD = 100 V, RL = 111 Ω
ID ≅ 0.9 A, VGEN = 4.5 V, Rg = 1 Ω
10 15
ns
Rise Time tr 25 40
Turn-Off Delay Time td(off) 30 45
Fall Time tf20 30
Tur n - O n D e l ay Time td(on)
VDD = 100 V, RL = 111 Ω
ID ≅ 0.9 A, VGEN = 10 V, Rg = 1 Ω
510
Rise Time tr 20 30
Turn-Off Delay Time td(off) 16 25
Fall Time tf12 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 3.6 A
Pulse Diode Forward Current ISM 2
Body Diode Voltage VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 0.9 A, dI/dt = 100 A/µs, TJ = 25 °C
40 80 ns
Body Diode Reverse Recovery Charge Qrr 40 80 nC
Reverse Recovery Fall Time ta21 ns
Reverse Recovery Rise Time tb19
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
www.vishay.com
3
Vishay Siliconix
SiA456DJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0.0
0.4
0.8
1.2
1.6
2.0
0123
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I D
VGS =5thru2V
VGS =1V
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0.0 0.4 0.81.2 1.6 2.0
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=2.5V
V
GS
=4.5V
V
GS
=1.8V
0
2
4
6
8
10
0246810 12
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =160V
VDS =100V
ID=1.1A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0
100
200
300
400
500
600
0 1020304050
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
Crss
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
VGS =4.5V,2.5V,I
D= 0.75 A
VGS =1.8V,I
D=0.1A
www.vishay.com
4
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
Vishay Siliconix
SiA456DJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.81.0
TJ= 150 °C
1
VSD -Source-to-Drain Voltage (V)
- Source Current (A)
IS
0.1
10
TJ= 25 °C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
(V)VGS(th)
TJ- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.5
1.0
1.5
2.0
2.5
3.0
012345
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TJ= 25 °C
TJ= 125 °C
ID=0.75A
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Safe Operating Area, Junction-to-Ambient
0.1
1
1000
0.01
- Drain Current (A)
ID
0.1
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
1ms
10 ms
100 ms
1 10 100
10
TA= 25 °C
Single Pulse
Limited byR
DS(on)*
1s
DC
10 s
BVDSS
Limited
100 µs
0.001
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
www.vishay.com
5
Vishay Siliconix
SiA456DJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 255075100125150
TC- Case Temperature (°C)
ID- Drain Current (A)
Power Derating
0
5
10
15
20
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
Vishay Siliconix
SiA456DJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68642.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
