Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC PD TJ, Tstg JA BC307 50 45 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=45V (BC307) ICES VCE=25V (BC308, BC309) BVCES IC=10A (BC307) 50 BVCES IC=10A (BC308, BC309) 30 BVCEO IC=2.0mA (BC307) 45 BVCEO IC=2.0mA (BC308, BC309) 25 BVEBO IE=10A 5 VCE(SAT) IC=10mA, IB=0.5mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz fT VCE=5.0V, IC=10mA, f=50MHz NF VCE=5.0V, IC=0.2mA (BC307, BC308) RG=2K, f=1KHz NF VCE=5.0V, IC=0.2mA (BC309) RG=2K, f=30Hz-15KHz hFE VCE=5.0V, IC=2.0mA BC307A BC308A BC309A MIN MAX 120 220 BC308 BC309 30 30 25 25 5.0 100 500 -65 to +150 250 TYP MAX 15 15 10 UNITS nA nA V V V V V V V pF pF MHz dB 4 dB 0.3 0.7 6 12 130 BC307B BC308B BC309B MIN MAX 180 460 UNITS V V V mA mW C C/W BC307C BC308C BC309C MIN MAX 380 800 R0 (2-October 2008) Central TM BC307 BC308 BC309 Semiconductor Corp. PNP SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) BASE 3) EMITTER MARKING: FULL PART NUMBER R0 (2-October 2008)