BC307B - Central Semiconductor Corp.

MAXIMUM RATINGS: (TA=25°C) SYMBOL BC307 BC308 BC309 UNITS

Collector-Emitter Voltage VCES 50 30 30 V

Collector-Emitter Voltage VCEO 45 25 25 V

Emitter-Base Voltage VEBO 5.0 V

Continuous Collector Current IC100 mA

Power Dissipation PD500 mW

Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C

Thermal Resistance ΘJA 250 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ICES VCE=45V (BC307) 15 nA

ICES VCE=25V (BC308, BC309) 15 nA

BVCES IC=10μA (BC307) 50 V

BVCES IC=10μA (BC308, BC309) 30 V

BVCEO IC=2.0mA (BC307) 45 V

BVCEO IC=2.0mA (BC308, BC309) 25 V

BVEBO IE=10μA 5 V

VCE(SAT) IC=10mA, IB=0.5mA 0.3 V

VBE(ON) VCE=5.0V, IC=2.0mA 0.55 0.7 V

Cob VCB=10V, IE=0, f=1.0MHz 6 pF

Cib VEB=0.5V, IC=0, f=1.0MHz 12 pF

fTVCE=5.0V, IC=10mA, f=50MHz 130 MHz

NF VCE=5.0V, IC=0.2mA (BC307, BC308) 10 dB

RG=2KΩ, f=1KHz

NF VCE=5.0V, IC=0.2mA (BC309) 4 dB

RG=2KΩ, f=30Hz-15KHz

BC307A BC307B BC307C

BC308A BC308B BC308C

BC309A BC309B BC309C

MIN MAX MIN MAX MIN MAX

hFE VCE=5.0V, IC=2.0mA 120 220 180 460 380 800

BC307

BC308

BC309

PNP SILICON TRANSISTOR

Central

Semiconductor Corp.

R0 (2-October 2008)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC307,

BC308, and BC309 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

TO-92 CASE