© Semiconductor Components Industries, LLC, 2014
March, 2020 − Rev. 4
1Publication Order Number:
RHRG5060−F085/D
Hyperfast Rectifier
50 A, 600 V
RHRG5060-F085
Description
The RHRG5060−F085 is an hyperfast diode with softrecovery
characteristics (trr < 45ns). It has half the recovery time of ultrafast
diode and is of silicon nitride passivated ion−implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping diode
and rectifier in a variety of automotive switching power supplies
and other power switching automotive applications. Its low stored
charge and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power loss
in the switching transistors.
Features
•High Speed Switching ( trr = 45 ns (Typ.) @ IF = 50 A )
•Low Forward Voltage( VF = 1.67 V (Typ.) @ IF = 50 A )
•Avalanche Energy Rated
•AEC−Q101 Qualified
•This Device is Pb−Free
Applications
•Switching Power Supply
•Power Switching Circuits
•General Purpose
•Automotive and General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current
@ TC = 25 °C
IF(AV) 50 A
Non−repetitive Peak Surge Current
(Halfwave 1 Phase 50 Hz)
IFSM 150 A
Avalanche Energy
(1.4 A, 40 mH)
EAVL 40 mJ
Operating Junction and Storage
Temperature
TJ, TSTG, −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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TO−247−2L
340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG5060
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
RHRG5060 = Specific Device Code
1. Cathode 2. Anode
RHRG5060−F085
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2
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Max Units
RqJC Maximum Thermal Resistance, Junction to Case 0.42 °C/W
RqJA Maximum Thermal Resistance, Junction to Ambient 45 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Tube Quantity
RHRG5060 RHRG5060−F085 TO−247 −30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 250 uA
TC = 175°C− − 1.5 mA
VFM
(Note 1)
Instantaneous Forward Voltage IF = 50 A TC = 25°C−1.67 2.1 V
TC = 175°C−1.29 1.7 V
trr
(Note 2)
Reverse Recovery Time IF = 1 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−37 45 ns
IF = 50 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−45 60 ns
TC = 175°C−200 −ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF = 50 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−25
20
45
−
−
−
ns
ns
nC
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RHRG5060−F085
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3
TEST CIRCUITS AND WAVEFORMS
Figure 1. Trr Test Circuit Figure 2. Trr Waveforms and Definitions
Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms
I = 1 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1I
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
V
RHRG5060−F085
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4
TYPICAL PERFORMANCE CHARECTERISTICS
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse Current vs.
Reverse Voltage
Figure 7. Typical Junction Capacitance Figure 8. Typical Reverse Recovery Time vs. di/dt
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
Trr, Reverse Recovery Time (ns)
di/dt (A/ms)
Cj, Capacitances (pF)
VR, Reverse Voltage (V)
Figure 9. Typical Reverse Recovery Current vs. di/dt Figure 10. Forward Current Derating Curve
IF(AV), Average Forward Current (A)
TC, Case Temperature (5C)
di/dt (A/ms)
Irr, Reverse Recovery Current (A)
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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