PBSS4330PA,115 - NXP Semiconductors

1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

PNP complement: PBSS5330PA.

1.2 Features and benefits

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Exposed heat sink for excellent thermal and electrical conductivity

Leadless small SMD plastic package with medium power capability

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

Rev. 01 — 19 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 30 V

ICcollector current - - 3 A

ICM peak collector current single pulse;

tp≤1ms --5A

RCEsat collector-emitter

saturation resistance IC=3A;

IB=300mA [1] -75100mΩ

Product data sheet Rev. 01 — 19 April 2010 2 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Ta ble 2. Pinnin g

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

Transparent top view

sym02

Table 3. Ordering i nformation

Type number Package

Name Description Version

PBSS4330PA HUSON3 plastic thermal enhanced ultra thin small outline package;

no leads; three terminals; body 2 ×2×0.65 mm SOT1061

Table 4. Marking codes

Type number Marking code

PBSS4330PA AH

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 30 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 3 A

ICM peak collector current single pulse;

tp≤1ms -5A

IBbase current - 500 mA

Ptot total power dissipation Tamb ≤25 °C[1] -500mW

[2] -1W

[3] -1.25W

[4] -2.1W

Product data sheet Rev. 01 — 19 April 2010 3 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, mounting pad for collector 1 cm2

(4) FR4 PCB, standard f ootprint

Fig 1. Power derating curves

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Tamb (°C)

−75 17512525 75−25

006aab999

1.0

1.5

0.5

2.0

2.5

Ptot

(W)

0.0

(1)

(3)

(2)

(4)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --250K/W

[2] --125K/W

[3] --100K/W

[4] --60K/W

Product data sheet Rev. 01 — 19 April 2010 4 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

FR4 PCB, standard footprint

Fig 2. Transient thermal impe da n ce from ju nc tio n to ambient as a function of p ulse duration; typical values

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impe da n ce from ju nc tio n to ambient as a function of p ulse duration; typical values

006aab979

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aab980

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 19 April 2010 5 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 6 cm2

Fig 4. Transient thermal impe da n ce from ju nc tio n to ambient as a function of p ulse duration; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 5. Transient thermal impe da n ce from ju nc tio n to ambient as a function of p ulse duration; typical values

006aac000

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33 0.5

0.75

006aab982

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

Zth(j-a)

(K/W)

10−1

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 19 April 2010 6 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Ta ble 7. Ch aracteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =30V; I

E= 0 A - - 100 nA

VCB =30V; I

E=0A;

Tj= 150 °C--50μA

ICES collector-emitter

cut-off current VCE =30V; V

BE = 0 V - - 100 nA

IEBO emitter-base

cut-off current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =2V [1]

IC= 0.5 A 300 465 -

IC= 1 A 270 435 700

IC= 2 A 230 370 -

IC= 3 A 180 310 -

VCEsat collector-emitter

saturation voltage IC=0.5A; I

B=50mA [1] - 4060mV

IC=1A; I

B=50mA [1] -80110mV

IC=2A; I

B= 100 mA [1] - 155 220 mV

IC=3A; I

B= 300 mA [1] - 220 300 mV

RCEsat collector-emitter

saturation resistance IC=3A; I

B= 300 mA [1] - 75 100 mΩ

VBEsat base-emitter

saturation voltage IC=2A; I

B= 100 mA [1] - 0.95 1.1 V

IC=3A; I

B= 300 mA [1] - 1.07 1.2 V

VBEon base-emitter

turn-on voltage VCE =2V; I

C=1A [1] -0.761V

tddelay time VCC =9V; I

C=2A;

IBon =0.1A;

IBoff =−0.1 A

-11-ns

trrise time - 52 - ns

ton turn-on time - 63 - ns

tsstorage time - 230 - ns

tffall time - 40 - ns

toff turn-off time - 270 - ns

fTtransition frequency VCE =5V; I

C= 100 mA;

f=100MHz 100 210 - MHz

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz - 2130pF

Product data sheet Rev. 01 — 19 April 2010 7 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 6. DC current gain as a function of collector

current; typical values Fig 7. Collector current as a fun ction of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 8. Base-emitter voltage as a function of collector

current; typical values Fig 9. Base-emitter saturation voltage as a function

of collector current; typica l values

006aac044

400

200

600

800

hFE

IC (mA)

10−1104

103

110

(1)

(3)

(2)

VCE (V)

0.0 2.01.60.8 1.20.4

006aac045

2.0

3.0

1.0

4.0

5.0

(A)

0.0

IB (mA) = 25

17.5

12.5

7.5

2.5

22.5

006aac046

0.4

0.8

1.2

VBE

(V)

0.0

IC (mA)

10−1104

103

110

(1)

(3)

(2)

006aac047

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10−1104

103

110

(1)

(3)

(2)

Product data sheet Rev. 01 — 19 April 2010 8 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 10. C ol le cto r -emitter saturation voltage as a

function of collector current; typical values Fig 11. Collector-emitter sa turation voltage as a

function of collector current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values Fig 13. Collector-emitter saturation resistance as a

function of collector current; typical values

006aac048

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(1)

(2)

(3)

006aac049

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(1)

(3)

(2)

006aac050

IC (mA)

10−1104

103

110

10−1

102

RCEsat

(Ω)

10−2

(1)

(2)

(3)

IC (mA)

10−1104

103

110

006aac051

10−1

102

103

RCEsat

(Ω)

10−2

(1)

(3)

(2)

Product data sheet Rev. 01 — 19 April 2010 9 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

8. Test information

Fig 14. BISS transistor switching time definition

VCC =9V; I

C=2A; I

Bon =0.1A; I

Boff =−0.1 A

Fig 15. Test circu it for swi t ch ing times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 01 — 19 April 2010 10 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 16. Package outline SOT1061 (HUSON3)

09-11-12Dimensions in mm

0.65

max

2.1

1.9

1.6

1.4

0.35

0.25

0.45

0.35

2.1

1.9

1.1

0.9

0.3

0.2

1.05

0.95

1.3

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packin g quantity

3000

PBSS4330PA SOT1061 4 mm pitch, 8 mm tape and reel -115

Product data sheet Rev. 01 — 19 April 2010 11 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering footprint SOT1061 (HUSON3)

occupied area

solder paste = solder lands Dimensions in mm

sot1061_fr

solder resist

0.4

2.1

1.3

0.25

0.25 0.25

1.1 1.2

0.55

0.6

2.3

0.5 (2×)

0.5 (2×) 0.6 (2×)

0.4 (2×)

0.5

1.6

1.7

1.05

Product data sheet Rev. 01 — 19 April 2010 12 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS4330PA_1 20100419 Product data sheet - -

Product data sheet Rev. 01 — 19 April 2010 13 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

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data sheet shall define the specification of the product as agr eed between

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representation or warranty that such applications will be suitable for the

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Customers are responsible for the design and ope ration of their applications

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 01 — 19 April 2010 14 of 15

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

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non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

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liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 April 2010

Documen t identifi er: PBSS4330PA_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information . . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15