Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.50.1 +0.25 0.4max. 0.40.08 4.0-0.20 45 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0-0.2 2.60.1 1.50.1 4.50.1 1.60.2 Features 0.50.08 1.50.1 0.40.04 3.00.15 Absolute Maximum Ratings 3 (Ta=25C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.2 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C 2 1 marking * 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion Electrical Characteristics Parameter 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package Marking symbol : 1M or more, and the board (Ta=25C) Symbol Conditions min typ max Unit 1 A Collector cutoff current ICBO VCB = 7V, IE = 0 Collector to base voltage VCBO IC = 10A, IE = 0 10 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10A, IC = 0 5 V 100mA** Forward current transfer ratio hFE VCE = 2V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA 200 800 Transition frequency fT VCB = 5V, IE = -50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 5V, IE = 0, f = 1MHz 30 0.15 V MHz pF ** Pulse measurement 1 2SD2357 Transistor PC -- Ta IC -- VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 1.2 1.0 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 4 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) Ta=75C 25C -25C 0.03 0.01 0.003 0.1 0.3 1 3 10 Collector current IC (A) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C 100 80 60 40 20 0 1 3 10 8 10 12 0 0.4 30 0.8 1.2 240 500 400 Ta=75C 25C 300 -25C 200 100 0 0.01 0.03 0.1 0.3 100 Collector to base voltage VCB (V) 1.6 2.0 2.4 Base to emitter voltage VBE (V) fT -- I E 1 3 Collector current IC (A) Cob -- VCB 120 0.4 VCB=5V f=200MHz Ta=25C VCE=2V 1 0.001 0.01 0.03 6 600 3 0.1 0.6 hFE -- IC IC/IB=100 0.3 0.8 Collector to emitter voltage VCE (V) VCE(sat) -- IC 10 -25C 0 0 Transition frequency fT (MHz) 20 Ta=75C 0.2 0 0 25C 1.0 IB=3.5mA 0.2 0.2 0 2 VCE=2V Ta=25C Collector current IC (A) 1.2 IC -- VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 10 200 160 120 80 40 0 -1 -3 -10 -30 -100 -300 -1000 Emitter current IE (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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