1
Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1537
■Features
●Low collector to emitter saturation voltage VCE(sat).
●Large collector power dissipation PC.
●Mini Power type pac kage, allo wing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5±0.1
2.6±0.1
2.5±0.1
0.4max.1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0±0.15
1.5±0.1
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
1.6±0.2
45°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC*
Tj
Tstg
Ratings
10
10
5
1.2
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = 7V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA**
IC = 500mA, IB = 5mA
VCB = 5V, IE = –50mA, f = 200MHz
VCB = 5V, IE = 0, f = 1MHz
min
10
10
5
200
typ
120
30
max
1
800
0.15
Unit
µA
V
V
V
V
MHz
pF
Marking symbol : 1M
** Pulse measurement
*Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
2
Transistor 2SD2357
PC — Ta IC — VCE IC — VBE
VCE(sat) — IChFE — ICfT — IE
Cob — VCB
0 16040 12080 14020 10060
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
012108264
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25˚C
2.5mA
2.0mA
1.5mA
1.0mA
3.0mA
I
B
=3.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
02.42.01.60.4 1.20.8
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
Ta=75˚C –25˚C
25˚C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
0.01 0.1 1 100.03 0.3 3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10 I
C
/I
B
=100
25˚C –25˚C
Ta=75˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
0.01 0.1 1 100.03 0.3 3
0
600
500
400
300
200
100
Ta=75˚C
25˚C
–25˚C
V
CE
=2V
Collector current I
C
(A)
Forward current transfer ratio h
FE
–1 –10 –100 –1000–3 –30 –300
0
240
200
160
120
80
40
V
CB
=5V
f=200MHz
Ta=25˚C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz)
1 3 10 30 100
0
120
100
80
60
40
20
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
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2001 MAR
