PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced from
Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NPZT2907A
BC
C
SOT-223
E
PN2907A
CBETO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
MMPQ2907
CCCCCCCC
SOIC-16
EBEBEBEB
NMT2907
SOT-6
Mark: 200
C1
E1 C2
B1 E2 B2
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2222)
fTCurrent Gain - Bandwidth Product IC = 50 mA, VCE = 20 V,
f = 100 MHz 200 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0,
f = 100 kHz 8.0 pF
Cibo Input Capacitance VEB = 2.0 V, IC = 0,
f = 100 kHz 30 pF
SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2222)
ton Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns
tdDelay Time IB1 = 15 mA 10 ns
trRise Time 40 ns
toff Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns
tsStorage Time IB1 = IB2 = 15 mA 80 ns
tfFall Time 30 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBBase Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA
ICBO Collector Cutoff Current VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150°C0.02
20 µA
µA
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
100
100
50 300
VCE(sat)Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.4
1.6 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA 1.3
2.6 V
V
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563
Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n
Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP General Purpose Amplifier
(continued)
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN2907A *PZT2907A
PDTotal Device Dissipation
Derate above 25°C625
5.0 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 125 °C/W
Symbol Characteristic Max Units
**MMBT2907A MMPQ2907
PDTotal Device Dissipation
Derate above 25°C350
2.8 1,000
8.0 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357 125
240
°C/W
°C/W
°C/W
PNP General Purpose Amplifier
(continued)
Typical Characteristics
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
Pr63
110 100 500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
C
CESAT
ββ = 10
25 °C
- 40 ºC
125 ºC
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
110 100 500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 ºC
125 ºC
ββ = 10
Base Emitter ON Voltage vs
Collector Current
Pr63
0.1 110 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 ºC
125 ºC
Collector-Cutoff Current
vs. Ambient Temperature
Pr63
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
º
V = 35V
CB
Input and Output Capacitance
vs Reverse Bias Voltage
0.1 110 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
Switching Times
vs Collector Current
Pr63
10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Turn On and Turn Off Times
vs Collector Current
10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Rise Time vs Collector
and Turn On Base Currents
Pr63
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
1.0 KΩ
- 6.0 V
15 V
1.0 KΩ
- 30 V
0
≤ 200ns
≤ 200ns
- 16 V
0
50 Ω
200 Ω
1 KΩ37 Ω
50 Ω
30 V
